公开(公告)号：JP2012209486A

公开(公告)日：2012-10-25

申请号：JP2011075179

申请日：2011-03-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： UKO TORU ,  GOTO OSAMU

IPC: H01L31/10

CPC classification number: H01L51/424 ,  H01L51/0012 ,  H01L51/0055 ,  H01L51/0064 ,  H01L51/0072 ,  Y02E10/549

Abstract: PROBLEM TO BE SOLVED: To provide a polarization organic photoelectric conversion device highly sensitive to polarization, a method for producing the same, and a polarization optical device highly sensitive to polarization and capable of receiving and photoelectrically converting light polarized in two directions.SOLUTION: A polarization organic photoelectric conversion device has a structure in which at least a portion of an organic photoelectric conversion layer 13 interposed between a first electrode 11 and a second electrode 12 is oriented uniaxially in a predetermined direction in the plane in advance. Light is incident on the polarization organic photoelectric conversion device while a predetermined bias voltage is applied between the first electrode 11 and the second electrode 12, and the light polarized parallel to the orientation axis of the organic photoelectric conversion layer 13 is photoelectrically converted. Two of such polarization organic photoelectric conversion devices are disposed respectively on the top and the bottom to construct a polarization optical device.

Abstract translation: 要解决的问题：提供对极化高度敏感的偏振有机光电转换装置，其制造方法和对极化高度敏感并能够接收和光电转换在两个方向上偏振的光的偏振光学装置。 解决方案：偏振有机光电转换装置具有这样的结构，其中介于第一电极11和第二电极12之间的有机光电转换层13的至少一部分预先在平面中沿预定方向在轴向上单向取向 。 在第一电极11和第二电极12之间施加预定的偏置电压时，光入射到偏振有机光电转换器件上，并且平行于有机光电转换层13的取向轴偏振的光被光电转换。 两个这样的偏振有机光电转换器件分别设置在顶部和底部以构成偏振光学器件。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2011124253A

公开(公告)日：2011-06-23

申请号：JP2009278245

申请日：2009-12-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SAWAHATA JUNJI ,  KURAMOTO MASARU ,  GOTO OSAMU

IPC: H01S5/16 ,  H01S5/343

CPC classification number: H01S5/16 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser, using a nitride-based III-V group compound semiconductor, which can have an end surface window structure formed extremely easily, can suppress optical waveguide loss, can suppress light absorption and local heat generation in laser operation due to presence of a surface level, and is high in a manufacturing yield and excellent in a shape of a far-field image; and to provide a method of manufacturing the semiconductor laser.
SOLUTION: A groove 16 is formed near at least the formation position of the end surface window structure of an n-type GaN substrate 11. The width, shape, position, etc. of the groove 16 are determined by design. On the n-type GaN substrate 11 in which the groove 16 is formed, a GaN-based semiconductor layer 25 which includes an active layer 19 formed of a nitride-based III-V group compound semiconductor including In and Ga is grown to manufacturer a GaN-based semiconductor laser having the end surface window structure. It is preferable that a recessed part formed at a part over the groove 16 is filled with an insulator.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供半导体激光器，使用能够极端地形成端面窗结构的氮化物系III-V族化合物半导体能够抑制光波导损耗，能够抑制光吸收和局部 由于存在表面水平而导致激光操作中的发热，制造成品率高，远场图像形状优异; 并提供一种制造半导体激光器的方法。 解决方案：至少形成在n型GaN衬底11的端面窗结构的形成位置处的槽16.槽16的宽度，形状，位置等由设计确定。 在其中形成有沟槽16的n型GaN衬底11上，生长包括由包括In和Ga的基于氮化物的III-V族化合物半导体形成的有源层19的GaN基半导体层25制造商 具有端面窗结构的GaN基半导体激光器。 优选地，形成在凹槽16上的部分的凹部被绝缘体填充。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2008277867A

公开(公告)日：2008-11-13

申请号：JP2008210286

申请日：2008-08-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  GOTO OSAMU ,  IKEDA MASAO

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light emitting element capable of suppressing overflow of an electron without interfering the injection of a hole into an active layer and drastically reducing a driving current and a driving voltage, with easy process using a nitride-based group III-V semiconductor. SOLUTION: The semiconductor light-emitting element has the active layer 7 in the multiple quantum well structure of In x Ga 1-x N/In y Ga 1-y N, an AlGaN/GaN superlattice cap layer 8 in contact with the layer 7, a p-type GaN optical waveguide layer 9 in contact with the layer 8, and a p-type AlGaN/GaN superlattice clad layer 10 in contact with the layer 9. In case of manufacturing the above-described element, the active layer 7 and the AlGaN/GaN superlattice cap layer 8 are grown up in a carrier-gas atmosphere substantially containing no hydrogen and containing nitrogen as a main component. The p-type GaN optical wavegide layer 9 and the p-type AlGaN/GaN superlattice clad layer 10 are grown up in the atmosphere containing nitrogen and hydrogen as the main components. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供能够抑制电子溢出而不干扰向有源层注入空穴的半导体发光元件的制造方法，并且可以容易地大大降低驱动电流和驱动电压 使用基于氮化物的III-V族III族半导体。 解决方案：半导体发光元件具有In / Sb> Ga 1-x N / In y的多量子阱结构中的有源层7 与层7接触的AlGaN / GaN超晶格帽层8，与层8接触的p型GaN光波导层9和 p型AlGaN / GaN超晶格覆盖层10与层9接触。在制造上述元件的情况下，有源层7和AlGaN / GaN超晶格覆盖层8基本上在载气气氛中长大 不含氢，含氮为主要成分。 p型GaN光波导层9和p型AlGaN / GaN超晶格覆盖层10在以氮气和氢气为主要成分的气氛中长大。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2005268459A

公开(公告)日：2005-09-29

申请号：JP2004077378

申请日：2004-03-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAKAHASHI JUNKO ,  TAKANO SHIZUKO ,  OTA MAKOTO ,  GOTO OSAMU ,  HOSHINA YUKIO ,  YABUKI YOSHIBUMI

IPC: H01L21/02 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To suppress the generation of cracking when handling a substrate or making the substrate like a thin film for formation of an electrode, and to manufacture a semiconductor light emitting device or a semiconductor element at a high yield. SOLUTION: A light emitting device structure made of a GaN-based semiconductor layer 2 and a p-side electrode 6 are formed on the first main surface of an n-type GaN substrate 1, the surface of the side of the light emitting device structure and the p-side electrode 6 is adhered to the first main surface of a sapphire substrate 10 by a first adhesive having a first melting temperature, and then the second main surface of the sapphire substrate 10 is adhered to a supporting base by a second adhesive having a melting temperature lower than the first melting temperature. The n-type GaN substrate 1 is made thin from the main surface side, and it is heated at a temperature lower than the first melting temperature and higher than the second melting temperature to melt the adhesive. Thus, the n-type GaN substrate 1 and the sapphire substrate 10 adhered to each other by the first adhesive are peeled off from the supporting base to form an n-side electrode 15 on the second main surface of the n-type GaN substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了抑制在处理基板时产生裂纹或使基板像用于形成电极的薄膜那样，并以高产率制造半导体发光器件或半导体元件。 解决方案：在n型GaN衬底1的第一主表面上形成由GaN基半导体层2和p侧电极6制成的发光器件结构，光的一侧的表面 发光装置结构，p侧电极6通过具有第一熔融温度的第一粘合剂粘附到蓝宝石基板10的第一主表面，然后蓝宝石基板10的第二主表面通过 第二粘合剂，其熔融温度低于第一熔融温度。 n型GaN衬底1从主表面侧制成薄，并且在低于第一熔融温度并高于第二熔化温度的温度下被加热以熔化粘合剂。 因此，通过第一粘合剂彼此粘合的n型GaN衬底1和蓝宝石衬底10从支撑基底剥离，以在n型GaN衬底1的第二主表面上形成n侧电极15 （C）2005，JPO＆NCIPI

公开(公告)号：JP2003081697A

公开(公告)日：2003-03-19

申请号：JP2001273245

申请日：2001-09-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ANZAI SHINICHI ,  NAKAJIMA HIROSHI

IPC: C30B29/38 ,  H01L21/205 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To suppress formation of warpage in a substrate when a nitride-based III-V compound semiconductor layer is grown on the substrate prepared from a substance different from the nitride-based III-V compound semiconductor. SOLUTION: A first nitride-based III-V compound semiconductor layer 3 is grown on a main face of a substrate 1, and striped seed crystals are formed by patterning the layer 3. At this time, in a first area, the seed crystals are periodically formed at a first interval, and in a second area, the seed crystals are formed at a second interval larger than the first interval. Then, a second nitride-based III-V compound semiconductor layer 4 is grown in the lateral direction on the substrate 1 using these seed crystals, and a third nitride-based III-V compound semiconductor layer L for forming an elemental structure is grown on the second nitride-based III-V compound semiconductor layer 4.

Abstract translation: 要解决的问题：当在由不同于氮化物III-V族化合物半导体的物质制备的衬底上生长氮化物基III-V化合物半导体层时，抑制衬底中翘曲的形成。 解决方案：在基板1的主面上生长第一氮化物基III-V化合物半导体层3，通过图案化层3形成条纹晶种。此时，在第一区域中，晶种为 以第一间隔周期性地形成，并且在第二区域中，以比第一间隔大的第二间隔形成晶种。 然后，使用这些晶种在基板1上沿横向生长第二氮化物基III-V化合物半导体层4，并且在第三氮化物基III-V化合物半导体层4上生长用于形成元素结构的第三氮化物基III-V化合物半导体层L 第二氮化物系III-V族化合物半导体层4。

公开(公告)号：JP2002261395A

公开(公告)日：2002-09-13

申请号：JP2001271947

申请日：2001-09-07

Applicant: SONY CORP

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device where an initial deterioration rate is small, a long life is achieved, aging and irregularity in light emission are extremely small, and a nitride-based group III-V compound semiconductor is used. SOLUTION: In the semiconductor light-emitting device using the nitride-based group III-V compound semiconductor, a first nitride-based group III-V compound semiconductor containing In and Ga, for example, an active layer 7 made of InGaN, a second nitride-based group III-V compound semiconductor containing In and Ga that are different from the first nitride-based group III-V compound semiconductor, for example, a middle layer 8 made of InGaN, and a third nitride-based group III-V compound semiconductor containing Al and Ga, for example, a cap layer 8 made of p-type AlGaN are successively allowed to contact one another for laminating.

公开(公告)号：JP2011054982A

公开(公告)日：2011-03-17

申请号：JP2010238739

申请日：2010-10-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOMITANI SHIGETAKA ,  GOTO OSAMU

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/32 ,  H01S5/20 ,  H01S5/34

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/3407

Abstract: PROBLEM TO BE SOLVED: To provide a GaN-based III-V compound semiconductor light emitting device having high efficiency of light emission and high reliability at a light-emitting wavelength of ≥440 nm. SOLUTION: The GaN-based semiconductor laser element 10 includes a multilayer structure of: a stripe-shaped convex portion 18 made of a surface layer of a sapphire substrate 12, a buffer layer 14 and a first GaN layer 16; and on the sapphire substrate, a second GaN layer 20; an n-side cladding layer 22; an n-side guide layer 24; an active layer 26; a deterioration prevention layer 28; a p-side guide layer 30; a p-side cladding layer 32 and a p-side contact layer 34. In the GaN-based semiconductor laser element, an active layer is formed as a quantum well structure including a GaInN barrier layer 36 and a GaInN well layer 38, and a planar crystal defect prevention layer 40 made of an AlGaN layer is provided on an upper surface or a lower surface, or between both the surfaces of the barrier layer and the well layer. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供在≥440nm的发光波长下具有高发光效率和高可靠性的GaN基III-V族化合物半导体发光器件。 解决方案：GaN基半导体激光元件10包括：由蓝宝石衬底12的表面层，缓冲层14和第一GaN层16构成的条形凸部18的多层结构; 并在蓝宝石衬底上形成第二GaN层20; n侧包覆层22; n侧引导层24; 活性层26; 劣化防止层28; p侧引导层30; p侧覆层32和p侧接触层34.在GaN系半导体激光元件中，形成作为包括GaInN势垒层36和GaInN阱层38的量子阱结构的有源层， 在上表面或下表面上，或在阻挡层和阱层的两个表面之间设置由AlGaN层制成的平面晶体缺陷防护层40。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010245559A

公开(公告)日：2010-10-28

申请号：JP2010157512

申请日：2010-07-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/343 ,  H01L21/205 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, using nitride based III-V compound semiconductors, which has longer operating life by improving the crystallinity of an optical waveguide layer. SOLUTION: A semiconductor laser is manufactured by sequentially growing an n-type AlGaN cladding layer 5, an n-type GaN optical waveguide layer 6, an active layer 7, an undoped GaN optical waveguide layer 17, a p-type AlGaN cap layer 9, a p-type GaN optical waveguide layer 10, a p-type AlGaN/GaN superlattice cladding layer 18, and a p-type GaN contact layer. In this case, the n-type GaN optical waveguide layer 6 to the p-type AlGaN cap layer 9 are grown in an atmosphere of N 2 , and the p-type GaN optical waveguide layer 10 to the p-type GaN contact layer are grown in an atmosphere of a mixed gas of N 2 and H 2 . COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种通过提高光波导层的结晶度而具有更长使用寿命的氮化物III-V族化合物半导体的半导体发光器件。 解决方案：通过依次生长n型AlGaN包覆层5，n型GaN光波导层6，有源层7，未掺杂的GaN光波导层17，p型AlGaN 盖层9，p型GaN光波导层10，p型AlGaN / GaN超晶格包层18和p型GaN接触层。 在这种情况下，n型GaN光波导层6到p型AlGaN覆盖层9在N 2 的气氛中生长，并且p型GaN光波导层10生长到 p型GaN接触层在N 2 和H 2 的混合气体的气氛中生长。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2008034587A

公开(公告)日：2008-02-14

申请号：JP2006205638

申请日：2006-07-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  SHOJI MIWAKO ,  OTA MAKOTO ,  OIZUMI ZENSHI

IPC: H01S5/042 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide the method of manufacturing a semiconductor laser in which the end of a resonator can be used as a current non-injection region by easily etching and removing the p-side electrode of a portion near at least one end surface of the resonator, and the roughness of an etching surface at the time of dry-etching is not produced.
SOLUTION: A metal laminated film whose bottom layer comprises a Pd film 16 and whose top layer comprises a Pt film 17 is formed in the shape of a stripe on a GaN semiconductor layer 12 which forms a laser structure. A ridge stripe 18 is formed by carrying out the dry-etching of the GaN semiconductor layer 12 using the metal laminated film as an etching mask. On this occasion, the Pt film 17 is made to be virtually removed at an etching completion time point. Then, a portion other than a portion for use as a p-side electrode of the Pd film 16 and the remaining Pt film 17 is removed by carrying out wet-etching using aqua regia.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供制造半导体激光器的方法，其中可以通过容易地蚀刻和去除靠近的部分的p侧电极来将谐振器的端部用作电流非注入区域 谐振器的一个端面，并且不产生干蚀刻时的蚀刻表面的粗糙度。 解决方案：在形成激光结构的GaN半导体层12上形成具有Pd膜16并且其顶层包含Pt膜17的底层的金属层压膜形成为条状。 通过使用金属层压膜作为蚀刻掩模进行GaN半导体层12的干蚀刻来形成脊条18。 在这种情况下，使Pt膜17在蚀刻完成时间点被实际去除。 然后，通过使用王水进行湿式蚀刻除去除了用作Pd膜16的p侧电极的部分和剩余的Pt膜17之外的部分。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2004128519A

公开(公告)日：2004-04-22

申请号：JP2003417113

申请日：2003-12-15

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has superior luminous properties, is very reliable, and has a long service life. SOLUTION: A method of manufacturing the semiconductor light emitting device comprises a first step of enabling a nitride III-V compound semiconductor layer forming a light emitting device structure to grow on a nitride III-V compound semiconductor substrate where a plurality of second regions having a second average dislocation density higher than a first average dislocation density possessed by a first crystal region are regularly arranged in an array in the first crystal region and a second step of scribing the nitride III-V compound semiconductor substrate on which the nitride III-V compound semiconductor layer is grown along an outline containing a straight line drawn between the two adjacent second regions. COPYRIGHT: (C)2004,JPO