公开(公告)号：JP2010245559A

公开(公告)日：2010-10-28

申请号：JP2010157512

申请日：2010-07-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/343 ,  H01L21/205 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, using nitride based III-V compound semiconductors, which has longer operating life by improving the crystallinity of an optical waveguide layer. SOLUTION: A semiconductor laser is manufactured by sequentially growing an n-type AlGaN cladding layer 5, an n-type GaN optical waveguide layer 6, an active layer 7, an undoped GaN optical waveguide layer 17, a p-type AlGaN cap layer 9, a p-type GaN optical waveguide layer 10, a p-type AlGaN/GaN superlattice cladding layer 18, and a p-type GaN contact layer. In this case, the n-type GaN optical waveguide layer 6 to the p-type AlGaN cap layer 9 are grown in an atmosphere of N 2 , and the p-type GaN optical waveguide layer 10 to the p-type GaN contact layer are grown in an atmosphere of a mixed gas of N 2 and H 2 . COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种通过提高光波导层的结晶度而具有更长使用寿命的氮化物III-V族化合物半导体的半导体发光器件。 解决方案：通过依次生长n型AlGaN包覆层5，n型GaN光波导层6，有源层7，未掺杂的GaN光波导层17，p型AlGaN 盖层9，p型GaN光波导层10，p型AlGaN / GaN超晶格包层18和p型GaN接触层。 在这种情况下，n型GaN光波导层6到p型AlGaN覆盖层9在N 2 的气氛中生长，并且p型GaN光波导层10生长到 p型GaN接触层在N 2 和H 2 的混合气体的气氛中生长。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2004014795A

公开(公告)日：2004-01-15

申请号：JP2002165954

申请日：2002-06-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YABUKI YOSHIBUMI ,  OFUJI YOSHIO ,  MIZUNO TAKASHI

IPC: H01S5/022 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a submount for a nitride semiconductor laser which can prevent short circuit between electrodes by reducing the rate of defective goods.
SOLUTION: The width of a welding layer 22 corresponding to a p-side electrode 61 is made narrower than the width of the p-side electrode 61. A squeeze-out preventing layer 23 under the welding layer 22 is provided with an exposed region 23A which is not coated with the welding layer 22 along two opposite sides 22D, 22E of the welding layer 22 and a side 22F cross them. The squeeze-out preventing layer 23 is formed of a metal which is not wettable to the welding layer 22, and can prevent the welding layer 22 from squeezing out in the sides 22D, 22E, 22F by means of the exposed region 23A. It is desirable that the side 22F corresponds to the front side of the laser chip 60. In the side 22G, the welding layer 22 coats the squeeze-out preventing layer 23 and a relief region 22H extended over the squeeze-out preventing layer 23 is provided.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2011151424A

公开(公告)日：2011-08-04

申请号：JP2011104671

申请日：2011-05-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SHIMURA FUMIO ,  MIZUNO TAKASHI ,  ICHINOKURA KEIJI ,  KURAMOTO MASARU

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a multi-beam type semiconductor light-emitting element which is free from electrode separation during scribing and has a stable operation voltage.
SOLUTION: A substrate has a plurality of high-defect regions composed of a crystal having a second average dislocation density higher than a first average dislocation density, in a low-defect region composed of a crystal having the first average dislocation density. The high-defect regions exist in three positions, namely, a central part and both end parts of the substrate, and the low-defect region exists among them. An n-side electrode having a geometrical shape is formed on the rear side of the substrate. The n-side electrode has such a shape that covers a part of a surface of the low-defect region, intermittently covers a surface of the high-defect region in the central part, and does not cover surfaces of high-defect regions in both end parts.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在划线期间没有电极分离并具有稳定的工作电压的多光束型半导体发光元件。 解决方案：在由具有第一平均位错密度的晶体构成的低缺陷区域中，具有由具有高于第一平均位错密度的第二平均位错密度的晶体构成的多个高缺陷区域。 高缺陷区域存在于基板的中心部和两端部的三个位置，并且存在低缺陷区域。 在基板的后侧形成具有几何形状的n侧电极。 n侧电极具有覆盖低缺陷区域的一部分表面的形状，间歇地覆盖中心部分的高缺陷区域的表面，并且不覆盖两者中的高缺陷区域的表面 端部。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2006229248A

公开(公告)日：2006-08-31

申请号：JP2006128976

申请日：2006-05-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for easily manufacturing a semiconductor LED using nitride-based group III-V compound semiconductor with a long lifetime due to a low initial impairment rate, while its aged deterioration and luminescence nonuniformity are very low. SOLUTION: When a semiconductor LED, with a structure in which an InGaN active layer 7, undoped InGaN deterioration preventing layer 8, undoped GaN optical waveguide layer 17, p-type AlGaN cap layer 9 and p-type AlGaN/GaN superlattice clad layer 18 are laminated, in this order, the active layer 7, undoped InGaN deterioration preventing layer 8, undoped GaN optical waveguide layer 17, and p-type AlGaN cap layer 9 must be grown at a growth temperature lower than that of the p-type AlGaN/GaN superlattice clad layer 18. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供一种使用氮化物系III-V族化合物半导体容易地制造半导体LED的制造方法，该半导体LED由于初始损伤率低而具有长寿命，而其老化劣化和发光不均匀性非常大 低。 解决方案：当具有InGaN活性层7，未掺杂的InGaN劣化防止层8，未掺杂的GaN光波导层17，p型AlGaN帽层9和p型AlGaN / GaN超晶格的结构的半导体LED 包覆层18依次层叠有源层7，未掺杂的InGaN劣化防止层8，未掺杂的GaN光波导层17和p型AlGaN覆盖层9必须在低于p的生长温度下生长 型AlGaN / GaN超晶格覆层18.版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004289010A

公开(公告)日：2004-10-14

申请号：JP2003081365

申请日：2003-03-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YOSHIDA HIROSHI ,  TANIGUCHI TADASHI ,  MIZUNO TAKASHI

IPC: H01S5/022 ,  H01L29/22 ,  H01S5/00 ,  H01S5/024 ,  H01S5/0683 ,  H01S5/323

CPC classification number: H01S5/02212 ,  H01L2224/48091 ,  H01L2224/4826 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/0222 ,  H01S5/02224 ,  H01S5/0226 ,  H01S5/024 ,  H01S5/0683 ,  H01S5/32341 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To prevent variation of driving current and optical output, a change in beam profile and deviation of an optical axis.
SOLUTION: The CAN package light emitting device is comprised of a semiconductor laser 1 adhered to a submount 6 and a CAN package 2 to house the semiconductor laser 1 adhered thereto. The CAN package 2 is provided with a fixing body 3 for fixing the semiconductor laser 1 at a specified position and a cap 4 for covering the semiconductor laser 1 fixed thereto. The vapor pressure of an Si organic compound gas in the CAN package 2 is limited within 5.4×10
2 N/m
2 or lower so that such a deposit that induces degrading of characteristic may be prevented from being generated in the light emitting part of the semiconductor laser 1 within a guaranteed time.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2003023215A

公开(公告)日：2003-01-24

申请号：JP2001204450

申请日：2001-07-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MIZUNO TAKASHI ,  TOJO TAKESHI ,  KIJIMA SATORU

IPC: H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element for facilitating its working by alleviating a warp of a substrate having an element formed thereon. SOLUTION: The method for manufacturing the semiconductor element comprises the steps of dry etching between adjacent laser structures 10 on a substrate 11, and forming trenches 30A parallel to laser stripes and trenches 30B (trenches 30) perpendicular to the trenches 30A. The etching depth (the depth of the trenches 30) at that time is D reaching the substrate 11 from the surface, and a width of 10 μm. A stress operating at an interface between a semiconductor layer and the substrate 11 is dispersed and reduced by forming the trenches 30. Thus, in the following steps, the warp of the substrate 11 is reduced.

Abstract translation: 要解决的问题：提供一种通过减轻其上形成有元件的基板的翘曲来制造半导体元件以便于其工作的方法。 解决方案：制造半导体元件的方法包括以下步骤：在衬底11上的相邻激光器结构10之间进行干蚀刻，并且形成平行于激光条纹的沟槽30A和垂直于沟槽30A的沟槽30B（沟槽30）。 此时的蚀刻深度（沟槽30的深度）为D，从表面到达基板11，宽度为10μm。 通过形成沟槽30，在半导体层与基板11之间的界面处工作的应力被分散和还原。因此，在以下步骤中，基板11的翘曲减小。

公开(公告)号：JP2002261395A

公开(公告)日：2002-09-13

申请号：JP2001271947

申请日：2001-09-07

Applicant: SONY CORP

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device where an initial deterioration rate is small, a long life is achieved, aging and irregularity in light emission are extremely small, and a nitride-based group III-V compound semiconductor is used. SOLUTION: In the semiconductor light-emitting device using the nitride-based group III-V compound semiconductor, a first nitride-based group III-V compound semiconductor containing In and Ga, for example, an active layer 7 made of InGaN, a second nitride-based group III-V compound semiconductor containing In and Ga that are different from the first nitride-based group III-V compound semiconductor, for example, a middle layer 8 made of InGaN, and a third nitride-based group III-V compound semiconductor containing Al and Ga, for example, a cap layer 8 made of p-type AlGaN are successively allowed to contact one another for laminating.

公开(公告)号：JP2007081197A

公开(公告)日：2007-03-29

申请号：JP2005268011

申请日：2005-09-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TANIGUCHI MANABU ,  KURAMOTO MASARU ,  IKEDA MASAO ,  MIZUNO TAKASHI ,  TOMITANI SHIGETAKA

IPC: H01S5/10

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor laser which can be improved in COD level without altering a laser structure even when driven with high power to have a higher kink level of L-I characteristics and further can reduce an operating current during power supply so that the reliability and life can be improved.
SOLUTION: The semiconductor laser has a laser structure made of a nitride-based group III-V compound semiconductor, a pair of cleavage planes 37 and 38 formed in a resonator direction of the laser structure, a coating 39 formed on a laser light projection side between the pair of cleavage planes 37 and 38, and a p-side electrode 35 and an n-side electrode 36 for injecting a current into the laser structure. A current of level larger than a threshold is supplied to the p-side electrode 35 and n-side electrode 36 for a specified time to irradiate the coating 39 with laser light, and then an area including an are of the coating 39 where the laser light is projected is modified.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种可以在不改变激光结构的情况下提高COD水平的半导体激光器的制造方法，即使以高功率驱动以具有较高的L1特性的扭结水平，并且还可以减少操作 供电时的电流，从而提高可靠性和寿命。 解决方案：半导体激光器具有由氮化物基III-V族化合物半导体制成的激光结构，在激光结构的谐振器方向上形成的一对解理面37和38，形成在激光器上的涂层39 一对解理面37,38之间的光投射侧，以及用于将电流注入激光结构的p侧电极35和n侧电极36。 在p侧电极35和n侧电极36上提供大于阈值的电流达规定时间以用激光照射涂层39，然后包括的区域是涂层39，其中激光 投影光被修改。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007059941A

公开(公告)日：2007-03-08

申请号：JP2006303673

申请日：2006-11-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/323 ,  H01L21/205 ,  H01L33/06 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device using nitride based III-V compound semiconductors, which has longer operating life by making the crystallinity of a optical wave guide to be good, and particularly, in a semiconductor laser, has a high symmetry of light intensity distribution in a far field pattern and a reduced aspect ratio of a radiation angle, and to provide its manufacturing method. SOLUTION: The semiconductor light emitting device is composed by sequentially laminating an n-type AlGaN cladding layer 5, an n-type GaN light wave guide layer 6, an active layer 7 made of InGaN, an undoped GaN light wave guide layer 17, a p-type AlGaN cap layer 9, a p-type AlGaN/GaN superlattice cladding layer 18, and a p-type GaN contact layer 12. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种通过使光波导的结晶性良好而具有更长使用寿命的氮化物III-V族化合物半导体的半导体发光元件，特别是在半导体激光器中， 具有远场图案中的光强度分布的高对称性和减小的辐射角的纵横比，并提供其制造方法。 解决方案：半导体发光器件通过依次层叠n型AlGaN包层5，n型GaN光波导层6，由InGaN制成的有源层7，未掺杂的GaN光波导层 17，p型AlGaN帽层9，p型AlGaN / GaN超晶格包覆层18和p型GaN接触层12.版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006339213A

公开(公告)日：2006-12-14

申请号：JP2005158834

申请日：2005-05-31

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SHIMURA FUMIO ,  MIZUNO TAKASHI ,  ICHINOKURA KEIJI ,  KURAMOTO MASARU

IPC: H01S5/042 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device with stabilized operation voltage without peeling of an electrode upon scribing.
SOLUTION: The semiconductor light emitting device includes on a substrate 10 a group III-V nitride semiconductor layer 30 composed of a low defect region 30A made of a crystal having first average dislocation density and of a high defect region 30B made of a crystal having a higher second average dislocation density than the first one. On a rear surface side of the substrate 10 there is formed an n side electrode 23 of a geometrical shape that covers the surface of the low defect region 10A, and intermittently covers the surface of the high defect region 10B.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供具有稳定的操作电压的半导体发光器件，而不会在划线时剥离电极。 解决方案：半导体发光器件在衬底10上包括由具有第一平均位错密度的晶体制成的低缺陷区域30A和由缺陷区域30B制成的高缺陷区域30B组成的III-V族氮化物半导体层30 具有比第一平均位错密度高的第二平均位错密度的晶体。 在基板10的背面侧形成有覆盖低缺陷区域10A的表面的几何形状的n侧电极23，并且间歇地覆盖高缺陷区域10B的表面。 版权所有（C）2007，JPO＆INPIT