公开(公告)号：JP2004146531A

公开(公告)日：2004-05-20

申请号：JP2002308787

申请日：2002-10-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KOBAYASHI TOSHIMASA

IPC: H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element and a method of manufacturing the same with which inclination from a seed crystal of crystal alignment of a nitride-system III-V group compound semiconductor grown in the lateral direction from the seed crystal is controlled, and element characteristics is also improved. SOLUTION: After the seed crystal layer 11 including a crystal portion 11A consisting of the crystal of the nitride-system III-V group compound semiconductor and an aperture portion 11B is formed on a sapphire substrate 10, a concave portion 10B which is communicated with the aperture 11B is provided on the sapphire substrate 10. At the center of the bottom surface of the concave portion 10B, a projected portion 31, for example, is formed. Thereafter, an n-side contact layer 15 is grown from the crystal portion 11A. Since a joining portion 15A is supported with the projected portion 31, a downward force at the joining portion 15A is alleviated and the crystal alignment CX in the lateral growth region X of the n-side contact layer 15 is aligned with the crystal alignment CS of the seed crystal layer 11. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003124573A

公开(公告)日：2003-04-25

申请号：JP2001315704

申请日：2001-10-12

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： YANASHIMA KATSUNORI ,  KOBAYASHI TOSHIMASA ,  NAKAJIMA HIROSHI ,  MOTOKI KENSAKU

IPC: H01L21/331 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/737 ,  H01L29/80 ,  H01L33/16 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To realize a highly reliable semiconductor light emitting element having good emission characteristics and a long lifetime, a highly reliable semiconductor element having good characteristics and a long lifetime. SOLUTION: At the time of fabricating a semiconductor light emitting element or a semiconductor element by growing a nitride based III-V compound semiconductor layer for forming a light emitting element structure or an element structure on the major surface of a nitride based III-V compound semiconductor substrate 1 where a plurality of second regions B having a second mean dislocation density higher than a first mean dislocation density are arranged regularly in a first region A of the crystal having the first mean dislocation density, the nitride based III-V compound semiconductor layer is prevented from coming into direct contact with the second region B on the major surface of the nitride based III-V compound semiconductor substrate.

公开(公告)号：JPH0885221A

公开(公告)日：1996-04-02

申请号：JP24890594

申请日：1994-09-16

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  KOBAYASHI TOSHIMASA ,  SATO SHUJI ,  SETO NOBUYOSHI ,  SHINOZAKI KENJI

IPC: B41J2/32 ,  B41M5/382 ,  B81B1/00 ,  B81C1/00

Abstract: PURPOSE: To raise gasification efficiency and heating efficiency by a method wherein a heating means in which a recording material of a recording material accomodating part is heated to be transferred to a material to be recorded is composed of a heating element which extends at least in a depth direction of the recording material accomodating part. CONSTITUTION: When a head 70 is operated as an actual vaporizer, a molten liquid dye 22 sucked up by a capillary phenomenon from a side surface of a piller-shaped body 175A of a micro-heater is heated at about 50-300 deg.C by the piller-shaped heater part 175A ranging over the whole in a depth direction. The dye 22 is vaporized from an upper part hole 150 of an electrode 85 and around an electrode 84 to be stuck to a material to be recorded, and printing can be carried out on photographic paper without any contact. In that case, the dye 22 permeated around the piller-shaped body 175A can be efficiently heated to be vaporized without fleeing. Further, since the heat is generated by the piller-shaped heating element 175A ranging in a depth direction of a dye accomodating part 87, the heat is held sufficiently over the whole of the dye, and there is hardly any influence caused by diffusion on a base 73.

公开(公告)号：JPH0885201A

公开(公告)日：1996-04-02

申请号：JP24890494

申请日：1994-09-16

Applicant: SONY CORP

Inventor： SATO SHUJI ,  SETO NOBUYOSHI ,  MATSUDA OSAMU ,  SHINOZAKI KENJI ,  KOBAYASHI TOSHIMASA

IPC: B41J2/01 ,  B41J2/32 ,  B41M5/382 ,  B81B1/00 ,  B81C1/00

Abstract: PURPOSE: To improve efficiency in gasification by transmitting heat efficiently to a recording material by a method wherein a porous structure which holds and feeds the recording material is provided at a position deeper than that of a heating element provided on a surface area of the recording material. CONSTITUTION: A heating element 75 is arranged on a surface area of a liquified dye 22 in a dye-accomodating part 87 of a printer head 70. Therefore, temperature of the liquified gas 22 is quickly raised on the surface area to make thermal efficiency by heating ascend, and efficiency in transfer of the dye by gasification can be improved. Further, a fine meandering pillar-shaped body 80 for holding and feeding the dye 22 is provided as a porous structure at a position deeper than that of the heating element 75 on the surface area of the dye 22 in contact therewith. Therefore, a capillary structure comes to be provided also to a gasification part 77, running away of the dye is inhibited by capillary action to hold the dye effectively and feed a specific amount thereof, and heat by the heating element 75 can be efficiently transmitted.

公开(公告)号：JPH07211990A

公开(公告)日：1995-08-11

申请号：JP2219994

申请日：1994-01-21

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA

IPC: H01L21/66 ,  H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To provide a semiconductor laser manufacturing method by which the productivity can be improved by measuring the light output of a semiconductor laser without splitting its substrate. CONSTITUTION:A semiconductor laser 10 is manufactured by forming stripes 11 for oscillation in one direction and electrodes 12 for giving an exciting current on the surface of a substrate 1 and two wall surfaces 21 nearly perpendicular to the surface of the substrate 1 at a prescribed interval on the stripes 11 at locations, for example, A-E, and then, measuring the characteristics of laser light emitted from the wall surfaces 21 by giving the exciting current to the stripes 11 between the wall surfaces 21. After measuring the characteristics, in addition, the stripes 11 between the wall surfaces 21 are cleaved.

公开(公告)号：JP2003243773A

公开(公告)日：2003-08-29

申请号：JP2003057705

申请日：2003-03-04

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  NAGANUMA KO

IPC: H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01S5/22 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To shorten a manufacturing process for forming a ridge in a semiconductor layer. SOLUTION: After forming a striped p-side electrode 21, a p-side contact layer 17 and a p-type clad layer 16 are partly and selectively etched by an RIE method using a chlorine gas (Cl 2 ) while the p-side electrode 21 is used as a mask, and the p-type clad layer 16 is exposed over the surface in a self- aligning way and a ridge part R is formed of an upper part of the p-type clad layer 16, p-side contact layer 17 and p-side electrode 21. The p-side electrode 21 has a structure that platinum, gold and nickel, or nickel, platinum, gold, and nickel are sequentially laminated from the side of the p-side contact layer 17, respectively. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002289539A

公开(公告)日：2002-10-04

申请号：JP2001090893

申请日：2001-03-27

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  YANASHIMA KATSUNORI ,  YAMAGUCHI KYOJI ,  NAKAJIMA HIROSHI

IPC: H01L33/16 ,  H01L21/20 ,  H01L21/205 ,  H01L31/10 ,  H01L31/18 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01S5/02 ,  H01S5/026 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable nitride semiconductor element arranged to have a high degree of freedom in the design and fabrication of the element. SOLUTION: Essential part of the nitride semiconductor element is formed on a sapphire substrate 10 and comprises a protrusion-like nuclide crystal layer 11 having an insulation layer 12 on one side face, and a GaN layer 15 grown on the substrate and the nuclide crystal layer by lateral growth method. Since the GaN layer is grown by lateral growth method only from the exposed side face not covered with the insulation layer of the nuclide crystal layer, the GaN layer is grown asymmetrically in the lateral direction, and an association part 32 is formed in the thickness direction of the GaN layer from the vicinity of boundary of the nuclide crystal layer and the insulation layer. Although the association part exists in the center of the nuclide crystal layers in the conventional structure, it exists in the vicinity of boundary between the nuclide crystal layer and the insulation layer in this example. Since the WL of low defect density region is represented by a relation WP≈WO+WL, and WL>WO assuming the pitch of the nuclide crystal layer is WP and the width thereof is WO, and thereby it is represented by a relation WL>0.5×WP; a significantly larger value of WL can be obtained as compared with a conventional structure.

公开(公告)号：JP2002252423A

公开(公告)日：2002-09-06

申请号：JP2001046437

申请日：2001-02-22

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  YAMAGUCHI KYOJI

IPC: H01L21/02 ,  H01L21/205 ,  H01L31/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a compound semiconductor layer of excellent crystallization, in particular, having a III-group nitride-base compound semiconductor layer. SOLUTION: The method has a lateral growing process in which a region having a low defect density and a region having a high defect density are formed alternately and periodically to grow a GaN layer 15 on a transparent substrate 10. The method has steps of: forming a GaN layer 11 on the sapphire substrate 10; forming a band-shaped pattern mark 12 made of an SiO2 film on the GaN layer and then etching the GaN layer and the top of the sapphire substrate to form an even structure having band-shaped bumps 13 and trench- shaped dips 14 alternately and periodically; growing the GaN layer 15 on the uneven structure by a lateral growing method; applying light to a band-shaped pattern to form at least two separate identification marks 12A on the bumps; and positioning a semiconductor device forming region on the region 21 having a low defect density based on the identification marks.

公开(公告)号：JP2000164987A

公开(公告)日：2000-06-16

申请号：JP33585398

申请日：1998-11-26

Applicant: SONY CORP

Inventor： YAMAGUCHI KYOJI ,  KOBAYASHI TOSHIMASA ,  KIJIMA SATORU ,  KOBAYASHI TAKASHI ,  ASAZUMA YASUNORI ,  ASANO TAKEHARU ,  HINO TOMOKIMI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To achieve a more stable horizontal mode, higher output and longer life of a semiconductor light emitting element using nitride-based III-V compound semiconductor. SOLUTION: In a GaN semiconductor laser, an AlGaN buried layer 9 is provided to bury both sides of a ridge stripe portion formed on the upper layer portion of a p-type AlGaN clad layer 7. After the upper layer portion of the p-type AlGaN clad layer 7 and a p-type GaN contact layer 8 are etched by using the SiO2 layer 21 as an etching mask to pattern them, the AlGaN buried layer 9 is unselectively grown with the SiO2 layer 21 formed on the ridge stripe so that both sides of the ridge stripe are buried. Furthermore, the AlGaN buried layer 9 is etched by using the SiO2 layer 21 as an etching stop layer to remove the portion of the AlGaN buried layer 9 from the ridge stripe.

公开(公告)号：JPH11251265A

公开(公告)日：1999-09-17

申请号：JP5527298

申请日：1998-03-06

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  TOJO TAKESHI

IPC: H01L33/32 ,  H01L21/301 ,  H01L29/04 ,  H01L33/00 ,  H01L33/36 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same which enable stable formation of a good cleavage plane on a semiconductor layer with good controllability, even in the case where a substrate having no cleavage property or difficult to cleave or having a different cleavage direction from the semiconductor layer is used, in forming an end surface made of a cleavage plane on a semiconductor layer stacked on a substrate, or where the dimension of the semiconductor device is to be as small as 1 mm or less, and a substrate for manufacturing a semiconductor device which is used for manufacturing such a semiconductor device. SOLUTION: A semiconductor layer 2 made of a III-V compound semiconductor constituting a laser structure is stacked on a sapphire substrate 1. Of the semiconductor layer 2 in a portion where a resonator end surface 3 is to be formed, at portions except at the portions corresponding to a ridge stripe portion 11 and a mesa portion 12, more specifically, both lateral portions of the portion corresponding to the mesa portion 12, a stripe-shaped cleavage auxiliary groove 4 extending in parallel with the (11-20) planes of the semiconductor layer 2 is formed, and the semiconductor layer 2 and the sapphire substrate 1 are cleaved from the cleavage auxiliary groove 4, thus obtaining the resonator end surface 3 made of the cleavage plane on the semiconductor layer 2.