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公开(公告)号：FR2784230B1
公开(公告)日：2000-12-29
申请号：FR9812444
申请日：1998-10-05
Applicant: ST MICROELECTRONICS SA
Inventor： ALIEU JEROME , LAIR CHRISTOPHE , HAOND MICHEL
IPC: H01L21/768 , H01L23/522
Abstract: The device and process include the deposition of polycrystalline germanium in the interconnect spaces between conductive metal elements. The device and process further include the removal of the germanium in order to form air-filled interconnect spaces.
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