公开(公告)号：DE69935401T2

公开(公告)日：2007-11-29

申请号：DE69935401

申请日：1999-10-01

Applicant: ST MICROELECTRONICS SA

Inventor： ALIEU JEROME ,  LAIR CHRISTOPHE ,  HAOND MICHEL

IPC: H01L21/768 ,  H01L23/522

Abstract: The device and process include the deposition of polycrystalline germanium in the interconnect spaces between conductive metal elements. The device and process further include the removal of the germanium in order to form air-filled interconnect spaces.

公开(公告)号：FR2784230A1

公开(公告)日：2000-04-07

申请号：FR9812444

申请日：1998-10-05

Applicant: ST MICROELECTRONICS SA

Inventor： ALIEU JEROME ,  LAIR CHRISTOPHE ,  HAOND MICHEL

IPC: H01L21/768 ,  H01L23/522

Abstract: Air insulation formation between metal conductors (11) of IC metallization levels comprises depositing and eliminating polycrystalline germanium (12) to form air-filled interconnection spaces (15).

公开(公告)号：DE69935401D1

公开(公告)日：2007-04-19

申请号：DE69935401

申请日：1999-10-01

Applicant: ST MICROELECTRONICS SA

Inventor： ALIEU JEROME ,  LAIR CHRISTOPHE ,  HAOND MICHEL

IPC: H01L21/768 ,  H01L23/522

Abstract: The device and process include the deposition of polycrystalline germanium in the interconnect spaces between conductive metal elements. The device and process further include the removal of the germanium in order to form air-filled interconnect spaces.

公开(公告)号：FR2784230B1

公开(公告)日：2000-12-29

申请号：FR9812444

申请日：1998-10-05

Applicant: ST MICROELECTRONICS SA

Inventor： ALIEU JEROME ,  LAIR CHRISTOPHE ,  HAOND MICHEL

IPC: H01L21/768 ,  H01L23/522

Abstract: The device and process include the deposition of polycrystalline germanium in the interconnect spaces between conductive metal elements. The device and process further include the removal of the germanium in order to form air-filled interconnect spaces.