-
公开(公告)号:DE60314203D1
公开(公告)日:2007-07-19
申请号:DE60314203
申请日:2003-04-28
Applicant: ST MICROELECTRONICS SA
Inventor: MONFRAY STEPHANE , DUTARTRE DIDIER , BOEUF FREDERIC
Abstract: An integrated circuit, incorporating a semiconductor device forming the source of a single photon, comprises on a silicon substrate (SB): (a) a MOS transistor (TR) having a grid in the shape of a mushroom, capable of delivering on its drain, in a controlled manner, a single electron in response to a control voltage applied on its grid; (b) at least one compatible silicon quantum box (BQ), electrically coupled to the drain region (D) of the transistor, and capable of emitting a single photon on the reception of a single electron emitted by the transistor. Independent claims are also included for: (a) a cryptographic device incorporating this integrated circuit; (b) a method for the fabrication of this integrated circuit; (c) a method for the emission of a single photon using this integrated circuit.
-
公开(公告)号:FR2839388A1
公开(公告)日:2003-11-07
申请号:FR0205539
申请日:2002-05-03
Applicant: ST MICROELECTRONICS SA
Inventor: MONFRAY STEPHANE , DUTARTRE DIDIER , BOEUF FREDERIC
IPC: H01S5/34 , H01L33/00 , H01L21/336 , H04L9/00
Abstract: An integrated circuit, incorporating a semiconductor device forming the source of a single photon, comprises on a silicon substrate (SB): (a) a MOS transistor (TR) having a grid in the shape of a mushroom, capable of delivering on its drain, in a controlled manner, a single electron in response to a control voltage applied on its grid; (b) at least one compatible silicon quantum box (BQ), electrically coupled to the drain region (D) of the transistor, and capable of emitting a single photon on the reception of a single electron emitted by the transistor. Independent claims are also included for: (a) a cryptographic device incorporating this integrated circuit; (b) a method for the fabrication of this integrated circuit; (c) a method for the emission of a single photon using this integrated circuit.
-