公开(公告)号：EP3225586B1

公开(公告)日：2019-05-08

申请号：EP16194692.6

申请日：2016-10-19

Applicant: STMicroelectronics S.r.l.

Inventor： BALDO, Lorenzo ,  ZERBINI, Sarah ,  DUQI, Enri

IPC: B81C1/00 ,  G01L9/00

公开(公告)号：EP3225586A1

公开(公告)日：2017-10-04

申请号：EP16194692.6

申请日：2016-10-19

Applicant: STMicroelectronics S.r.l.

Inventor： BALDO, Lorenzo ,  ZERBINI, Sarah ,  DUQI, Enri

IPC: B81C1/00

CPC classification number: G01L9/0052 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0264 ,  B81C1/00158 ,  B81C1/00182 ,  B81C2201/0116

Abstract: A process for manufacturing a MEMS pressure sensor (42) having a micromechanical structure (35) envisages: providing a wafer (1) having a substrate of semiconductor material and a top surface (2a); forming a buried cavity (10) entirely contained within the substrate (2) and separated from the top surface (2a) by a membrane (12) suspended above the buried cavity (10); forming a fluidic-communication access (22; 37) for fluidic communication of the membrane (12) with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane (12), a plate region (30) made of conductive material, separated from the membrane (12) by an empty space (24); and forming electrical-contact elements (30a, 30b) for electrical connection of the membrane (12) and of the plate region (30), which are designed to form the plates of a sensing capacitor (C), the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor (42) having the micromechanical structure (35) is moreover described.

Abstract translation: 一种用于制造具有微机械结构（35）的MEMS压力传感器（42）的方法设想：提供具有半导体材料衬底和顶表面（2a）的晶片（1）; 形成完全包含在所述衬底（2）内并且通过悬挂在所述掩埋腔（10）上方的膜（12）与所述顶表面（2a）分离的掩埋腔（10）; 形成用于所述膜（12）与外部环境的流体连通的流体连通入口（22; 37），所述外部环境设定为必须确定其值的压力; 形成悬置在所述膜（12）上方的由导电材料制成的板区域（30），所述板区域通过空的空间（24）与所述膜（12）分开; 和形成用于电连接膜（12）和板区域（30）的电接触元件（30a，30b），所述电接触元件被设计为形成感测电容器（C）的板，其电容值 表示要检测的压力的值。 此外还描述了具有微机械结构（35）的相应的MEMS压力传感器（42）。