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21.发明公开Method to prevent disturbances during the erasing phase in a non-volatile memory device 失效防止干扰的非易失性存储器的删除期间的方法
公开(公告)号：EP1260989A2
公开(公告)日：2002-11-27
申请号：EP02015769.9
申请日：1996-04-30
Applicant: STMicroelectronics S.r.l.
Inventor： Dallabora, Marco , Villa, Corrado , Bartoli, Simone , Defendi, Marco
CPC classification number: G11C16/344 , G11C16/10 , G11C16/16 , G11C16/3418 , G11C16/3427 , G11C16/3445 , G11C16/3459
Abstract: The invention concerns a method of avoiding disturbance during an erasing steps of an electrically programmable and erasable, semiconductor integrated non-volatile memory device, which comprises a matrix of memory cells divided into sectors. An operation of parallel erasing several sectors of the matrix as well as an operation of verifying the erasing of each sector in the matrix are carried out.
Abstract translation: 本发明涉及在擦除电可编程且可擦除，半导体集成电路的非易失性存储器设备，其包括存储单元划分为扇区的矩阵的步骤期间避免干扰的方法。 在关于业务验证矩阵中的每个扇区的擦除的基质的平行擦除若干个扇区的以及手术被执行。
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22.发明授权Sectorized electrically erasable and programmable non-volatile memory device with redundancy 失效Sektoriziertes电可擦除和可编程的冗余非易失性存储器设备
公开(公告)号：EP0797145B1
公开(公告)日：2002-06-12
申请号：EP96830144.0
申请日：1996-03-22
Applicant: STMicroelectronics S.r.l.
Inventor： Villa, Corrado , Dallabora, Marco , Tassan Caser, Fabio
IPC: G06F11/20
CPC classification number: G11C29/82
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公开(公告)号：EP0782145B1
公开(公告)日：2000-05-10
申请号：EP95830554.2
申请日：1995-12-29
Applicant: STMicroelectronics S.r.l.
Inventor： Villa, Corrado , Defendi, Marco , Bettini, Luigi
IPC: G11C11/00
CPC classification number: G11C16/16
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