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21.发明公开METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL, NITRIDE SEMICONDUCTOR CRYSTAL, AND APPARATUS FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL 有权用于生产氮化物半导体，氮化物半导体晶体和装置用于制造氮化物半导体
公开(公告)号：EP2390386A4
公开(公告)日：2013-08-28
申请号：EP10731243
申请日：2010-01-13
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： SATOH ISSEI , MIYANAGA MICHIMASA , YAMAMOTO YOSHIYUKI
CPC classification number: C30B23/00 , C30B29/403 , C30B29/406
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22.发明公开THIN FILM OF ALUMINUM NITRIDE AND PROCESS FOR PRODUCING THE THIN FILM OF ALUMINUM NITRIDE 有权THIN FILM氮化铝及其制造方法薄膜氮化铝
公开(公告)号：EP2246458A4
公开(公告)日：2012-03-07
申请号：EP09714366
申请日：2009-02-18
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： SATOH ISSEI , MIZUHARA NAHO , TANIZAKI KEISUKE , MIYANAGA MICHIMASA , SAKURADA TAKASHI , YAMAMOTO YOSHIYUKI , NAKAHATA HIDEAKI
CPC classification number: C30B29/403 , C23C14/0641 , C23C14/28 , C30B23/02
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23.发明公开ALGAN BULK CRYSTAL MANUFACTURING METHOD AND ALGAN SUBSTRATE MANUFACTURING METHOD 审中-公开用于生产的AlGaN VOLUME晶体和方法制备基片的AlGaN
公开(公告)号：EP2302112A4
公开(公告)日：2011-08-03
申请号：EP09797961
申请日：2009-07-16
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： MIYANAGA MICHIMASA , MIZUHARA NAHO , TANIZAKI KEISUKE , SATOH ISSEI , NAKAHATA HIDEAKI
IPC: C30B29/38 , H01L21/205
CPC classification number: H01L21/02389 , C30B25/02 , C30B29/403 , H01L21/0254
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公开(公告)号：EP2000567A4
公开(公告)日：2009-09-16
申请号：EP07739311
申请日：2007-03-22
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： MIYANAGA MICHIMASA , MIZUHARA NAHO , FUJIWARA SHINSUKE , NAKAHATA HIDEAKI , KAWASE TOMOHIRO
CPC classification number: C30B29/403 , C30B23/00
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25.发明公开WAVELENGTH CONVERSION ELEMENT AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION ELEMENT 有权用于制造波长变换元件的波长变换元件和方法
公开(公告)号：EP2309324A4
公开(公告)日：2013-05-01
申请号：EP09804892
申请日：2009-07-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： SATOH ISSEI , MIYANAGA MICHIMASA , YAMAMOTO YOSHIYUKI , NAKAHATA HIDEAKI
CPC classification number: G02F1/3775 , G02F1/3558 , G02F2202/101 , Y10T156/1075
Abstract: A wavelength conversion element having an improved property-maintaining life and a method for manufacturing the wavelength conversion element are provided. A wavelength conversion element 10a has an optical waveguide 13. The wavelength of incoming light 101 input from one end 13a of the optical waveguide 13 is converted and outgoing light 102 is output from the other end 13b of the optical waveguide 13. The wavelength conversion element includes a first crystal 11 composed of Al x Ga (1-x )N (0.5 ‰¤ x ‰¤ 1); and a second crystal 12 having the same composition as that of the first crystal. The first and second crystals 11 and 12 form a domain-inverted structure in which a polarization direction is periodically reversed along the optical waveguide 13, and the domain-inverted structure satisfies quasi phase matching conditions with respect to the incoming light 101. At least one of the first and second crystals has a dislocation density of 1 × 10 3 cm -2 or more and less than 1 × 10 7 cm -2 .
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Patent Agency Ranking26.发明公开PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL 审中-公开用于生产III族氮化物晶体和III族氮化物晶体
公开(公告)号：EP2302111A4
公开(公告)日：2011-10-19
申请号：EP09797795
申请日：2009-06-26
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： MIYANAGA MICHIMASA , MIZUHARA NAHO , TANIZAKI KEISUKE , SATOH ISSEI , NAKAHATA HIDEAKI , ARAKAWA SATOSHI , YAMAMOTO YOSHIYUKI , SAKURADA TAKASHI
CPC classification number: C30B29/403 , C30B23/025 , C30B25/18
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27.发明公开METHOD FOR GROWING ALUMINUM NITRIDE CRYSTAL, PROCESS FOR PRODUCING ALUMINUM NITRIDE CRYSTAL, AND ALUMINUM NITRIDE CRYSTAL 审中-公开METHOD FOR选育氮化铝晶体，制造工艺性和对氮化铝氮化铝
公开(公告)号：EP2230333A4
公开(公告)日：2011-08-10
申请号：EP08870791
申请日：2008-12-19
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： TANIZAKI KEISUKE , MIZUHARA NAHO , MIYANAGA MICHIMASA , NAKAHATA HIDEAKI , YAMAMOTO YOSHIYUKI
IPC: C30B29/38 , C30B23/02 , H01L21/203
CPC classification number: C30B29/403 , C30B25/02 , H01L21/02378 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02658
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28.发明公开
公开(公告)号：EP1925697A4
公开(公告)日：2009-11-11
申请号：EP06768027
申请日：2006-07-10
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： MIZUHARA NAHO , MIYANAGA MICHIMASA , KAWASE TOMOHIRO , FUJIWARA SHINSUKE
CPC classification number: C30B23/02 , C30B23/066 , C30B25/02 , C30B29/403 , Y10T428/2982
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29.发明公开POROUS CERAMIC AND METHOD FOR PREPARATION THEREOF, AND MICROSTRIP SUBSTRATE 审中-公开多孔陶瓷和方法相同，微观经营部TRIP衬底
公开(公告)号：EP1359133A4
公开(公告)日：2007-03-07
申请号：EP02710514
申请日：2002-02-05
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： MIYANAGA MICHIMASA , UCHIMURA NOBORU , KOMURA OSAMU
IPC: C04B38/00 , B24B37/04 , C04B35/581 , C04B35/591 , C04B35/65 , C04B41/53 , H01P3/08 , H05K1/02 , H05K1/03
CPC classification number: B24B37/042 , C04B35/581 , C04B35/591 , C04B35/6303 , C04B35/64 , C04B38/0025 , C04B38/0061 , C04B2111/00198 , C04B2235/3203 , C04B2235/3206 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3272 , C04B2235/3895 , C04B2235/402 , C04B2235/428 , C04B2235/46 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/667 , C04B2235/725 , C04B2235/728 , C04B2235/77 , C04B2235/96 , C04B2235/963 , H01P3/081 , H01P3/088 , H05K1/024 , H05K1/0306 , Y10T428/24917 , Y10T428/24926 , C04B35/00 , C04B35/597 , C04B40/0014 , C04B41/5025 , C04B35/584 , C04B41/5155 , C04B35/10 , C04B35/14 , C04B38/0067 , C04B41/51
Abstract: A method for preparing a porous ceramic which comprises mixing a metal powder as a precursor of a ceramic (1) and a sintering aid, and subjecting the resulting mixture to a heat treatment by microwave heating, thereby allowing the metal powder to undergo oxidation or nitrogenation from the surface thereof and allowing the metal to diffuse toward and outside of an oxide or nitride layer formed in the outer shell of the powder, to prepare a porous ceramic (1) having fine and uniform closed pores (1a). The porous ceramic (1) has fine closed pores (1a) dispersed uniformly in a high proportion and thus exhibits excellent characteristics when used, for example, in an electronic circuit substrate which needs good resistance to moisture, a low dielectric constant and a low dielectric loss as well as good mechanical strength.
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公开(公告)号：EP1142849A4
公开(公告)日：2004-11-10
申请号：EP99949425
申请日：1999-10-25
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： ITOH AI , MIYANAGA MICHIMASA , YOSHIMURA MASASHI
IPC: H05K1/02 , C04B35/584 , C04B37/02 , H01L21/48 , H01L23/498 , H01L23/538 , H05K1/03 , H01L23/08 , H01L23/14 , H01L23/15 , H05K1/05 , H05K3/38
CPC classification number: H01L21/4857 , C04B35/584 , C04B37/026 , C04B2237/125 , C04B2237/368 , C04B2237/402 , C04B2237/407 , C04B2237/66 , C04B2237/704 , C04B2237/706 , C04B2237/74 , C04B2237/76 , H01L23/49894 , H01L23/5383 , H01L2924/0002 , H05K1/0306 , H01L2924/00
Abstract: An Si3N4 ceramic composite substrate not cracking even if a mechanical or thermal shock is given to it and excellent in heat-radiation and heat-cycle-resistance characteristics. The Si3N4 substrate has a heat conductivity of more than 90 W/m. K, and a three-point flexural strength of more than 700 MPa. The relationship between the thickness tm of a metallic layer joined to a major surface of the Si3N4 substrate and the thickness tc of the Si3N4 substrate is given by 2 tm
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