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    SEMICONDUCTOR DEVICE
    21.
    发明专利
    SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS5857748A

    公开(公告)日：1983-04-06

    申请号：JP15715381

    申请日：1981-09-30

    Applicant: SHARP KK

    Inventor： YOSHIKAWA TOSHIBUMI ,  NAKAKURA YUKINORI

    IPC: H01L31/111 ,  H01L27/144 ,  H01L29/74

    Abstract: PURPOSE:To improve a critical OFF voltage increase rate (dv/dt)M of a lateral photo silicon controlled rectifier (SCR) by making large hFE of pnp element and photo sensitivity by thermal treatment, making small a gate resistance and by integrating elements in the same chip. CONSTITUTION:Response of pnp element of photo SCR delays when hFE is made large, and when a gate resistance is RG, a gate voltage VG CRGXdv/dt, and RG is made small, a critical off voltage increase rate becomes large. Meanwhile, a displacement current by dv/dt is a transient phenomenon and therefore (dv/dt)M can be improved remarkably by making large hFE and small RG by a mutual reinforcing effect by these two effects. When hFE is increased by making longer the life time of base layer, a photo sensitivity is generally enhanced, while the minimum trigger current reduces a little and the (dv/dt)M is improved. Such photo sensitivity is improved by about 30% through annealing under the N2 atmosphere at 900 deg.C. A value of dv/dt can be improved by about three times as compared with that when a resistance is externally provided by forming the RG with the P layer 9 in the N type substrate 1 and connecting the one end thereof to the gate 3 while the other end to the cathode 8 through the electrode 10.

    LIGHT SEMICONDUCTOR DEVICE
    22.
    发明专利
    LIGHT SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS5546557A

    公开(公告)日：1980-04-01

    申请号：JP12021478

    申请日：1978-09-28

    Applicant: SHARP KK

    Inventor： YOSHIKAWA TOSHIBUMI ,  TANI YOSHIHEI ,  ASOU AKIRA ,  KAHANABE HITOSHI

    IPC: H01L31/10 ,  H01L31/00

    Abstract: PURPOSE:To improve the spectral sensitivity characteristics of a light semiconductor device with respect to light of desired waveliength area without filter. CONSTITUTION:PN junctions 2 and 3 are provided in different depth from the surface of a substrate to thereby form photodiodes PD1, PD2 connected inversely. The photodiode PD1 is located deeply to sense the long wavelength component of light, while the photodiode PD2 senses the short wavelength component. Accordingly, the short wavelength component is absorbed in the area near the surface, and converted to current by the photodiode PD2, while the long wavelength component is protruded into deep portion of the substrate, and converted to current by the photodiode PD1 to thus produce light output current responsive to the illuminated light from electrodes 4-6. When the electrodes 4, 5 are shorted by an aluminum wire or resistor to thereby consume the output of the photodiode PD1, the spectral sensitivity characteristics of the semiconductor device is remarkably decreased at the long wavelength side to thereby provide characteristics having a sharp peak in visible area. when the electrodes 5 and 6 are similarly shorted, the short wavelength side sensitivity is lowered to provide characteristics having a sharp peak in infrared ray area.

    LIGHT-RECEIVING ELEMENT AND OPTICAL COUPLER USING ELEMENT THEREOF
    23.
    发明专利
    LIGHT-RECEIVING ELEMENT AND OPTICAL COUPLER USING ELEMENT THEREOF 失效

    公开(公告)号：JPH11135824A

    公开(公告)日：1999-05-21

    申请号：JP29390497

    申请日：1997-10-27

    Applicant: SHARP KK

    Inventor： MOTOYAMA KIYOTO ,  YOSHIKAWA TOSHIBUMI ,  MAKIYA KATSUNORI

    IPC: H01L31/10 ,  H01L31/12

    Abstract: PROBLEM TO BE SOLVED: To prevent mis-operation due to a noise signal by providing a first P-N junction and a second P-N junction comprising an elongated region connected to a ground, forming a conducting layer at the upper surface of the elongated region, connecting the layer to the ground and shielding the noise signal. SOLUTION: On a P-type substrate 4, an N-type epitaxial layer 6 and a P-type isolation region 5, for electrically insulating other circuits, are formed. The first P-N junction is formed of the P-type substrate 4, the P-type isolation region 5 and the N-type epitaxial layer 6. On the N-type epitaxial layer 6, a P-type elongated region 7 is formed. The second P-N junction is formed of the N-type epitaxial layer 6 and the P-type elongated region 7. On the P-type elongated region 7 and the P-type isolation region 5, an anode electrode 8 is formed and connected to the ground. On the upper surface of the P-type elongated region 7, a conducting layer 23 for shielding a noise signal is formed into a mesh shape and connected to the anode electrode 8.

    PHOTO-TRIAC
    25.
    发明专利
    PHOTO-TRIAC 失效

    公开(公告)号：JPH04249370A

    公开(公告)日：1992-09-04

    申请号：JP1415791

    申请日：1991-02-05

    Applicant: SHARP KK

    Inventor： MARIYAMA MITSURU ,  SHOZEN KAZUNOBU ,  YOSHIKAWA TOSHIBUMI

    IPC: H01L29/74 ,  H01L29/747

    Abstract: PURPOSE:To lower a voltage which is applied to a photo-triac MOSFET gate electrode having a MOSFET, reduce a gate oxidizing film destruction to enhance reliability, and improve a transfer flow characteristic. CONSTITUTION:Close to anode diffusing regions 4, 5 provided on a surface of an N type substrate 1, P type diffusing regions 24, 25 which are connected to gate electrodes 12, 13 of a MOSFET are provided, and an operating scope of the MOSFET is controlled at a punch through voltage or less between the anode diffusing regions 4, 5 and the P type diffusing regions 24, 25.

    MANUFACTURE OF SEMICONDUCTOR MODULE
    26.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR MODULE 失效

    公开(公告)号：JPH03222431A

    公开(公告)日：1991-10-01

    申请号：JP1949790

    申请日：1990-01-29

    Applicant: SHARP KK

    Inventor： MIYAJIMA TOSHIAKI ,  MATSUNAMI MITSUO ,  YOSHIOKA MINORU ,  YOSHIKAWA TOSHIBUMI ,  OKADA MASATAKE

    IPC: H01L29/73 ,  H01L21/331 ,  H01L29/732

    Abstract: PURPOSE:To provide a low-cost transistor by forming a first, heavily-doped single-crystal semiconductor layer of a first conductivity type in the shape of an island, and growing epitaxially a second single crystal semiconductor layer of the first conductivity type selectively on the first layer to form a base region of a second conductivity type. CONSTITUTION:There is formed a first single-crystal semiconductor layer 6 in the shape of an island, which is heavily doped and later buried. A second single-crystal semiconductor layer 7 of a first conductivity type is epitaxially grown selectively on the layer 6. A heavily-doped collector contact region 10 of the first conductivity type is formed, apart from a base region 8 of a second conductivity type, on the surface of the layer 7. This structure can be obtained without high-energy ion implantation at mega electron volts. Therefore, a low- cost lateral bipolar transistor is obtained in this manner.

    PHOTO DIODE
    30.
    发明专利
    PHOTO DIODE 失效

    公开(公告)号：JPS5996781A

    公开(公告)日：1984-06-04

    申请号：JP20718682

    申请日：1982-11-25

    Applicant: SHARP KK

    Inventor： YOSHIKAWA TOSHIBUMI

    IPC: H01L31/10 ,  H01L31/103

    Abstract: PURPOSE:To improve the response speed by a method wherein an epitaxial layer of the same conductivity type and an epitaxial layer of the second conductivity type are laminated on a high concentration substrate of the first conductivity type, and the P-N junction due to both the epitaxial layers is made as the P-N junction as a photodiode. CONSTITUTION:The P type epitaxial layer 12 of a normal concentration (low concentration) at approx. 1-50OMEGA-cm is formed on the P type substrate 11 of a high impurity concentration e.g. 0.1OMEGA-cm, further the N type epitaxial layer 3 is laminated, and the region of the N type epitaxial layer 3 is suitably devided by a P type isolation region 2. The high concentration P type substrate 11 under the P type epitaxial layer 12 serves to reduce the lifetime of minority carriers generated by the absorption of photons, and then eliminates the delay of the response time of minority carriers generated at this part. But, on the other hand, the minority carriers at this part do not contribute to the generation of photocurrent. Therefore, it is necessary to determine the thickness of the P type epitaxial layer by the balance between both.

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