公开(公告)号：JP2003132850A

公开(公告)日：2003-05-09

申请号：JP2001323997

申请日：2001-10-22

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: H01J65/00

Abstract: PROBLEM TO BE SOLVED: To provide a barrier-type cold cathode discharge lamp capable of exhibiting enhanced light emission efficiency. SOLUTION: The barrier-type cold cathode discharge lamp 1 comprises a hollow body 2, having transparent part and containing rare gas, a first electrode 3 which is composed of a first conductor 4a at least partially in the hollow 2 and a first insulation film 5a coated on the part of the conductor 4a in the hollow 2, a second electrode 3b composed of a second conductor 4b facing the first conductor 4a at least across the first insulation film 5a. A phosphor film 6 is formed on the inner surface of the hollow body 2.

公开(公告)号：JP2003109493A

公开(公告)日：2003-04-11

申请号：JP2001304570

申请日：2001-09-28

Applicant: TOSHIBA CORP ,  NAT INST OF ADV IND & TECHNOL ,  JAPAN SCIENCE & TECH CORP

Inventor： YOSHIDA HIROAKI ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  OGUSHI HIDEYO ,  WATANABE KOSHI

IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element having superior stability and reliability and to provide its manufacturing method. SOLUTION: This manufacturing method is provided with a process for preparing a substrate including diamonds 12 and 13, a process for disposing a mask plate 14 having an opening 14a on the substrate, a process for forming a metal film 15 on a region corresponding to the opening on the substrate and its surrounding region by piling metal materials on the substrate through the mask plate, and a process for forming an emitter group composed on a plurality of acute diamond emitters 13a which emit electrons by etching the diamond using the metal film as a mask.

公开(公告)号：JP2002100958A

公开(公告)日：2002-04-05

申请号：JP2000291796

申请日：2000-09-26

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  CHO TOSHI ,  FUNAKI HIDEYUKI

IPC: H03H9/25 ,  H03H3/08

Abstract: PROBLEM TO BE SOLVED: To provide a surface acoustic wave element which has a frequency characteristic over a wideband and which is low-cost by a method where a piezoelectric material having a large electromechanical coupling coefficient is used and a diamond polishing process is omitted in the surface acoustic wave element, in which a diamond is used for a propagation medium, and to provide its manufacturing method. SOLUTION: The surface acoustic wave element is provided with a piezoelectric substance layer 16, which comprises a first main face and a second main face as the rear with reference to the first main face, an electromechanical conversion electrode 19 which is formed on the first main face of the layer 16, which converts an electric signal into surface acoustic waves and which converts the surface acoustic waves into the electrical signal, a silicone layer 12 which is formed on the second main face of the layer 16, a diamond layer 13 which is formed on the silicone layer 12 and, in which the surface acoustic waves are propagated and a support substrate 14 which is bonded to the diamond layer 13 via an adhesive 15.

公开(公告)号：JP2002094355A

公开(公告)日：2002-03-29

申请号：JP2000278443

申请日：2000-09-13

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  CHO TOSHI ,  FUNAKI HIDEYUKI

IPC: H03H9/25 ,  H03H3/08

Abstract: PROBLEM TO BE SOLVED: To provide a surface acoustic wave element having a superior piezoelectric layer without the step of polishing of diamond layer, and to provide its manufacturing method. SOLUTION: This element provides a surface acoustic wave element that is provided with a piezoelectric bulk layer 20 having a front side and a rear side, an electromechanical conversion electrode 5 that is formed on the front side of the piezoelectric bulk layer 20, a diamond growing layer 1 formed on the rear side of the piezoelectric bulk layer 20, and a support substrate 3 that is adhered to the diamond growing layer 1 via an adhesive material 4.

公开(公告)号：JP2001015010A

公开(公告)日：2001-01-19

申请号：JP18654899

申请日：1999-06-30

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  CHO TOSHI

IPC: G09G3/10 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To provide an electron element for separating a short-circuit portion speedily and certainly, by dividing the element having many emitters as a plurality of blocks, and electrically separating a short-circuit block by an active element that automatically suppresses current during a short circuit between an emitter and a gate. SOLUTION: A portion sandwiched by two island-like p-type regions 52 forms a so called joint field-effect transistor(JFET), and an electrode 59 forms a short- circuit state between a source electrode and a gate electrode of the JFET. A voltage of a drain equals to a supply voltage and a source voltage during a short circuit between an emitter and a gate is null, so that saturated current flows. During normal operation only a slight part of an emitter current flows as a gate current, so that the source voltage decreases slightly than the supply voltage. The saturated current can be decreased by shortening a gap between the p-type regions 52 and increasing the length in the current flow direction to electrically separate a short-circuit block.

公开(公告)号：JP2000003647A

公开(公告)日：2000-01-07

申请号：JP16808898

申请日：1998-06-16

Applicant: TOSHIBA CORP

Inventor： SHIOIRI SATORU ,  KAMIKAWAJI TORU ,  SAKAI TADASHI ,  NAKAYAMA KAZUYA

IPC: H01H33/66 ,  H01J21/10

Abstract: PROBLEM TO BE SOLVED: To provide a power switch, usable for higher voltage, harmonized with the environment and excellent in safety and reliability. SOLUTION: An end plate 8A is brazed to an opening part on one side of an insulating cylinder 11A, an end plate 11B is brazed to an opening part on the other side thereof, and the interior is made vacuum. A positive electrode 3 made of copper material is put through and brazed to a middle part of the end plate 8A. A conduction shaft 1A is put through and brazed to a middle part of the end plate 8B on the other side. A pair of insulating tubes 9 is put through the end plate 8B at positions outside the conduction shaft 1A, and gate conduction shafts 7 are put through the insulating tubes 9. A gate electrode 4 is fixed to ends of the gate conduction shafts 7, and a plurality of acicular electrodes 2 are fixed to the conduction shaft 1A.

公开(公告)号：JPH10261361A

公开(公告)日：1998-09-29

申请号：JP6564297

申请日：1997-03-19

Applicant: TOSHIBA CORP

Inventor： SAKUMA HISASHI ,  SAKAI TADASHI ,  ONO TOMIO

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J19/24 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a vacuum micro element using diamond on its emitter. SOLUTION: A silicon board 102 is coated on its surface with an oxide film serving as a gate insulating layer 101 and further a molybdenum(Mo) film serving as a gate electrode layer 103 is formed. The insulating layer 101 and the electrode layer 103 is partly etched to form an opening, in which diamond is grown. The diamond is raised there into the shape of a circular cone so as to gradually close the opening. The diamond depositing on the Mo layer 103 is finally peeled off to finish a vacuum micro element.

公开(公告)号：JPH09213202A

公开(公告)日：1997-08-15

申请号：JP1744896

申请日：1996-02-02

Applicant: TOSHIBA CORP

Inventor： CHO TOSHI ,  SAKAI TADASHI ,  ONO TOMIO

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To enable low-voltage drive and high-frequency field emission. SOLUTION: Grooves 12b are formed in an N-type semiconductor substrate 11. A thin film of P-type diamond 13, a gate insulating film 16, and a gate electrode 17 are buried in the grooves 12b. The thin film 13, the gate insulating film 16, and the gate electrode 17 at their exposed ends 20 are on the same plane and are interposed to cross with the interfaces of the films 13, 16 at right angles. An anode electrode 18 is interposed to face the ends 20 through the vacuum atmosphere. Applying a voltage across the gate electrode 17 and the substrate 11 to provide the gate electrode 17 with a positive decreases the work function at the surface region of the thin film 13 of diamond facing the gate electrode 17. Applying a potential higher than that of the gate electrode 17 to the anode electrode 18 emits electrons from the part on the end 20 of the surface region having the decreased work function.

公开(公告)号：JPH0963464A

公开(公告)日：1997-03-07

申请号：JP21487795

申请日：1995-08-23

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  CHO TOSHI

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To obtain an electric field emission type cold cathode and the manufacture of it capable of lowering operating voltage by shortening the distance between a gate and an emitter, and inhibiting the effect of the possible destruction of partial emitter from spreading over the whole surface. SOLUTION: A recessed part 12, having a lower part opening diameter smaller than an upper part opening diameter, is formed on an SOI substrate 11 by utilizing the anisotropic etching of Si to etch an SiO2 layer 13 to form a hole 14, and then A1 is vacuum-deposited from an oblique direction, while rotating the SOI substrate 11, to form an Al layer 15. After that, Mo, emitter material, is vacuum-deposited onto the substrate 11 from a vertical direction to conically deposit the Mo in the hole 14, by utilizing the deposition of a layer 16, and also the filling of the diameter of the hole 14 to form an emitter 16a.

公开(公告)号：JPH07335116A

公开(公告)日：1995-12-22

申请号：JP13148894

申请日：1994-06-14

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  NAKAMURA HIROYUKI ,  TANAMOTO TETSUSHI ,  NAKAMOTO MASAYUKI

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304

Abstract: PURPOSE:To provide an electron emission device capable of emitting electrons with high intensity and uniformity by forming an electron emission cathode of a conductor region in the gap of fine skeletons formed on the main surface of a semiconductor board. CONSTITUTION:A silicon nitride film 2 is formed on one main surface of a silicon board 1, and an aluminium electrode 3 is deposited on the other main surface. The silicon board other than a part for forming an electron emission cathode is covered with an acid resistant protection film, and anodically formed in a hydrofluoric acid family etching solution to form silicon fine skeletons 4. Porous silicon obtained has the three dimensionally extended silicon fine skeletons 4, and gaps 5 exist between them. Anodic oxidation is conducted in a non-etching electrolyte solution by using silicon as an anode to form an anode oxide film 6 on the surface of the silicon fine skeleton 4. By using nickel for a conductor, a conductor region 7 is formed in the gap 5. Nickel electrodes 8 serving as electrodes in the conductor region 7 are arranged at both ends of a device by utilizing continuity in the lateral direction of the conductor region 7 to complete an electron emission device.