公开(公告)号：JP2001188336A

公开(公告)日：2001-07-10

申请号：JP37547799

申请日：1999-12-28

Applicant: TOSHIBA CORP

Inventor： KOTANI TOSHIYA ,  TANAKA SATOSHI ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F1/36 ,  G03F1/68 ,  G03F7/20 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To realize correction with high accuracy in a shirt correction time in a mask pattern correction method used for forming desired patterns on a wafer by a projection optical system. SOLUTION: This method consists of a step S2 for extracting the edges to be corrected from the design patterns, a distance calculating step S6 for calculating the distance from the edge to be corrected up to the nearest edge of the adjacent pattern, a step S11 for calculating the edge moving quantity by simulation according to the pattern layout existing within a certain range determined from the edge to be corrected when the calculated distance is shorter than a determined certain distance in the distance calculating step and moving the edge to be corrected in accordance with the calculated edge moving quantity and step S8 for moving the edge to be corrected in accordance with the edge moving quantity previously ruled according to the distance when the calculated distance is larger that the determined distance in the distance calculating step.

公开(公告)号：JP2001035766A

公开(公告)日：2001-02-09

申请号：JP20304899

申请日：1999-07-16

Applicant: TOSHIBA CORP

Inventor： SUTANI TAKUJI ,  SANHONGI SHOJI ,  TANAKA SATOSHI ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F1/20 ,  G03F1/68 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To enable suppression of lowering of dimensional accuracy for a pattern required of a high dimensional accuracy on a wafer caused due to variations in shots, to thereby improve the dimensional accuracy when the pattern is transferred to the wafer. SOLUTION: In a method for drawing a prescribed pattern on the resist on a mask substrate, using an electron beam writing device of a variable forming beam system to form a mask for light exposure, a pattern for a gate layer is separated into a first region 401 requiring high dimensional accuracy and a second region 402 other than the first region, the pattern of the first region 401 is divided into small figures, the pattern of the second region 402 is divided into large figures, the patterns of the regions are drawn on the resist of the mask substrate in accordance with the figure divisions.

公开(公告)号：JP2000019708A

公开(公告)日：2000-01-21

申请号：JP18243198

申请日：1998-06-29

Applicant: TOSHIBA CORP

Inventor： TANAKA SATOSHI ,  KOTANI TOSHIYA ,  INOUE SOICHI

IPC: G03F1/36 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To prepare desired transfer patterns with high accuracy while suppressing the explosive increase of the amount of data. SOLUTION: This preparing method of a mask pattern used for forming desired patterns on an exposed substrate by means of an exposure device, includes a process for making a correction of design data with respect to a first element for which the quantity of correction is determined depending on the disposition of patterns with sizes ranging below a predetermined one, a process for converting the corrected design data into mask plotting data, and a process for making a correction with respect to a second element other than the first element when the mask plotting data are introduced into a plotting device for performing plotting.

公开(公告)号：JPH11260686A

公开(公告)日：1999-09-24

申请号：JP5957098

申请日：1998-03-11

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  TANAKA SATOSHI ,  OKUMURA KATSUYA

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To reduce variations of a resist film thickness dependente on a light quantity absorbed in a resist. SOLUTION: In this method, a photomask cutting an LSI pattern is illuminated with an exposing light and the lights transmitting the photomask are exposed, so as to transfer a pattern to a resist film 6 formed in a processed substrate 3 in a projection optical system. In this case, a gap between a projection optical system 2 and the processed substrate 3 is filled up with monobromnaphthalene, having a refractive index greater than that of a member constituting a face closest to the processed substrate of the projection optical system 2 and smaller than that of the resist film 6 to transfer patterns.

公开(公告)号：JPH11258770A

公开(公告)日：1999-09-24

申请号：JP6510798

申请日：1998-03-16

Applicant: TOSHIBA CORP

Inventor： KOTANI TOSHIYA ,  TANAKA SATOSHI ,  SANHONGI SHOJI ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F1/36 ,  G03F1/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To easily determine the precise optimum size of an auxiliary pattern. SOLUTION: In the mask pattern designing method which uses a light source with exposure wavelength λ and designs the pattern of a photomask used to transfer a design pattern 1 with line width W" onto a wafer by a projection exposure device including a projection lens with a numerical aperture NA, the auxiliary pattern 4 generates for variation by sa'=saμλ/NA from the tip of a main pattern 3 corresponding as the mask pattern 2 to the design pattern 1 by conversion on the wafer is added to the main pattern 3 on a basis of standardized line breadthwise size value sa and a standardized line lengthwise size value sb predetermined so that a pattern tip position after transfer is finished as desired corresponding to standardized line width W=W'/(λ/NA) standardized with the exposure wavelength λ and numerical aperture NA, where W' is the line width of the main pattern 3 by on-wafer conversion.

公开(公告)号：JPH09106654A

公开(公告)日：1997-04-22

申请号：JP26585595

申请日：1995-10-13

Applicant: TOSHIBA CORP

Inventor： TANAKA SATOSHI

IPC: G11B23/03 ,  G11B23/28

Abstract: PROBLEM TO BE SOLVED: To improve the degree of freedom in use of a disk while securing the disk-cartridge function in this invention. SOLUTION: First and second write-protecting operation parts 19 and 20, whose elastic deformation is free to a cap body 10 that is opened and closed to a disk entrance of a cartridge main body 11, are formed as a unitary body. With the cap body 10 assembled at the closing position with respect to the disk entrance 14 of the cartridge main body 11, the write-protecting operation parts are arranged freely operably in both direction of the cartridge main body 11 in this constitution.

公开(公告)号：JPH07263315A

公开(公告)日：1995-10-13

申请号：JP5429794

申请日：1994-03-25

Applicant: TOSHIBA CORP

Inventor： TANAKA SATOSHI ,  INOUE SOICHI ,  FUJISAWA TADAHITO

IPC: G03F7/20 ,  H01L21/027 ,  G03B27/32

Abstract: PURPOSE:To always obtain the optimum oblique-incident lighting position and polarizing direction by controlling the refractive index, transmittance, and polarization of a filter so that the angle and direction of polarization of diffracted light can become equivalent to the optimum oblique-incident lighting position in accordance with the periodic direction and pitch of a mask pattern. CONSTITUTION:A reticle 5 is formed on a transparent substrate and composed of a light shielding section 10 which is made of such a light shielding material as chromium, etc., and does not transmit exposing light and an opening 11 which transmits the exposing light. The refractive index of a filter 9 electrically or optically changes in a cycle of 2D. The angle theta of diffraction of primary diffracted light can be decided from 2Dsintheta=lambda when the variation DELTAn of the refractive index and film thickness (t) of the filter 9 are adjusted. When a mask is irradiated with the diffracted light, two-flux interference is obtained on a wafer.

公开(公告)号：JPH04160581A

公开(公告)日：1992-06-03

申请号：JP28446190

申请日：1990-10-24

Applicant: TOSHIBA CORP ,  TOSHIBA INTELLIGENT TECH

Inventor： SUDA MASATO ,  TANAKA SATOSHI

IPC: G06K9/20

Abstract: PURPOSE:To improve the throughput by inputting information on postal matter, where character information, etc., is entered in various formats, as an image, extracting feature information and supplying identification information, and detecting an address area from format information corresponding to the identification information. CONSTITUTION:The output of an image input part 2 is converted by an A/D conversion part 3 into a digital signal, which is sent to a format specification part 4. The format specification part 4 extracts features from a specific area of the inputted image of the postal matter 1, compares the obtained feature information with previously given specific conditions, and supplies the identification information on a specific format to an area detection part 5 when the both match each other. Then the area detection part 5 utilizes the corresponding format information to detect a read area fixedly, i.e. the address area without performing any complicate image processing. Consequently, the throughput is improved.

公开(公告)号：JPS63253816A

公开(公告)日：1988-10-20

申请号：JP8586187

申请日：1987-04-09

Applicant: TOSHIBA CORP

Inventor： TANAKA SATOSHI

IPC: H02B1/24 ,  H02H3/02

公开(公告)号：JP2012104670A

公开(公告)日：2012-05-31

申请号：JP2010252134

申请日：2010-11-10

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： TANAKA SATOSHI

IPC: H01L21/027 ,  G01J1/02 ,  G01J1/42 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F1/24 ,  G01J1/429 ,  G03F1/84 ,  G03F7/70625 ,  G03F7/7085 ,  G03F7/70941

Abstract: PROBLEM TO BE SOLVED: To provide an exposure value evaluation method for easily evaluating exposure light having wavelengths other than EUV light.SOLUTION: A photo mask reflects long wavelength light having a longer wavelength than the EUV light out of the exposure light, and includes a long-wavelength light reflective film which absorbs the EUV light. The photo mask is disposed on the upper layer side of the long-wavelength light reflective film, and includes a mask pattern formed by using an absorption film which absorbs the EUV light and the long wavelength light. The photo mask and an exposure target substrate having a resist applied thereto are set in an EUV exposure device. The exposure light is radiated onto the photo mask from the mask pattern side, and the exposure light reflected by the photo mask is radiated onto the substrate. Then, based on the exposure value of the exposure light radiated on the substrate, light quantity distribution of the long wavelength light radiated on the substrate is measured.

Abstract translation: 要解决的问题：提供一种用于容易地评估具有除了EUV光之外的波长的曝光光的曝光值评估方法。 解决方案：光掩模反射比曝光光中的EUV光更长波长的长波长光，并且包括吸收EUV光的长波长光反射膜。 光掩模设置在长波长光反射膜的上层侧，并且包括通过使用吸收EUV光和长波长光的吸收膜形成的掩模图案。 在EUV曝光装置中设置光掩模和施加有抗蚀剂的曝光对象基板。 曝光光从掩模图案侧照射到光掩模上，并且由光掩模反射的曝光光被照射到基板上。 然后，基于照射在基板上的曝光光的曝光值，测量照射在基板上的长波长光的光量分布。 版权所有（C）2012，JPO＆INPIT