公开(公告)号：JP2003124407A

公开(公告)日：2003-04-25

申请号：JP2002288232

申请日：2002-10-01

Applicant: XEROX CORP

Inventor： ROMANO LINDA T ,  KNEISSL MICHAEL A ,  NORTHRUP JOHN E

IPC: H01L23/36 ,  H01L23/367 ,  H01L27/15 ,  H01L29/06 ,  H01L33/64 ,  H01S5/02 ,  H01S5/024

Abstract: PROBLEM TO BE SOLVED: To obtain a substrate having a high thermal conductivity and a structural integrality with a thick board, related to a semiconductor device. SOLUTION: The substrate 100 includes a body 11 having an upper surface 114 and a bottom surface 112 opposite to the upper surface 114 and having the first thermal conductivity, a cavity 116 defined by an inner surface 113 of the body 110 and opened at least on the bottom surface 112, and at least one material 120 disposed in the cavity 116 having the second thermal conductivity higher than the first thermal conductivity and coming into contact with at least a part of the inner surface 113.

公开(公告)号：JP2000307199A

公开(公告)日：2000-11-02

申请号：JP2000104311

申请日：2000-04-06

Applicant: XEROX CORP

Inventor： VAN DE WALLE CHRISTIAN G ,  BOUR DAVID P ,  KNEISSL MICHAEL A ,  ROMANO LINDA T

IPC: H01S5/20 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide an asymmetric optical waveguide nitride laser diode structure which does not require a p-type waveguide layer nor tunnel barrier layer containing aluminum in a large amount. SOLUTION: An asymmetric optical waveguide nitride laser diode structure 400 has an active layer 120 having first and second surfaces, a transition layer 429 which is brought into contact with the first surface of the active layer 120, a p-type clad layer 130 adhered adjacently to the transition layer 429, and an n-type layer 116 which is brought into contact with the second surface of the active layer 120.

公开(公告)号：JP2001111172A

公开(公告)日：2001-04-20

申请号：JP2000287812

申请日：2000-09-22

Applicant: XEROX CORP

Inventor： BOUR DAVID P ,  KNEISSL MICHAEL A ,  ROMANO LINDA T ,  PAOLI THOMAS L ,  VAN DE WALLE CHRISTIAN G

IPC: H01S5/227 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a laser diode having a stronger mode stability and a low threshold current operation. SOLUTION: The index guide type buried heterostructure nitride laser structure 100 has a ridge structure 111 having first, second and third faces, clad structures 121, 125 and a multiple quantum well structure 145 interposed between the clad structures 121, 125, and a buried layer 155 existing on the first, second and third faces of the ridge structure 111 and having an opening for electrical contact to the third face of the ridge structure 111.

公开(公告)号：JP2001203422A

公开(公告)日：2001-07-27

申请号：JP2001004591

申请日：2001-01-12

Applicant: XEROX CORP

Inventor： DANIEL HOFUSHUTETTAA ,  PAOLI THOMAS L ,  ROMANO LINDA T ,  SUN DECAI ,  DAVID P BARR ,  MICHAEL A KNEISEL ,  CHRIS G VAN DE WOORE ,  NOBLE M JOHNSON

IPC: H01S5/02 ,  H01S5/12 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a gain combination type DFB GaN laser. SOLUTION: The distributed feedback laser 100 has a substrate 102, an active layer 110, comprising at least one from among aluminum, gallium, indium and nitrogen, a lower side clad layer 106 which has alloy comprising at least one from among aluminum, gallium, indium and nitrogen and is in the lower side of the active layer 110 and the upper side clad layer 123 which comprises at least one of the aluminum, gallium, indium and nitrogen and is in the upper side of the active layer 110, and periodical variations in at least either of the lower side and upper side clad layers 106, 123 provides distributed optical feedback.

公开(公告)号：JP2001111171A

公开(公告)日：2001-04-20

申请号：JP2000287811

申请日：2000-09-22

Applicant: XEROX CORP

Inventor： BOUR DAVID P ,  KNEISSL MICHAEL A ,  ROMANO LINDA T ,  PAOLI THOMAS L ,  VAN DE WALLE CHRISTIAN G

IPC: H01S5/227 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a laser diode having a stronger mode stability and a low threshold current operation. SOLUTION: The index guide type heterostructure nitride laser structure 100 has a first waveguide layer, a second waveguide layer, a multiple quantum well structure 145 interposed between the first and second waveguide layers, a ridge structure 111 having first, second and third faces, and a buried layer 155 existing on the first, second and third faces of the ridge structure 111.

公开(公告)号：JP2003218292A

公开(公告)日：2003-07-31

申请号：JP2002294382

申请日：2002-10-08

Applicant: XEROX CORP

Inventor： ROMANO LINDA T ,  FORK DAVID K

IPC: B81B3/00 ,  B81C1/00 ,  G01R1/067 ,  G01R3/00 ,  H01L21/60 ,  H01L23/12 ,  H01L23/32 ,  H05K3/40

Abstract: PROBLEM TO BE SOLVED: To improve the strength and durability of a spring structure. SOLUTION: A stress-balancing layer is formed over a portion of a spring metal finger 120 that remains attached to a substrate 101 to counter balance internal stresses inherently formed in the spring metal finger 120. The internal stress (for example, positive internal stress) of the spring metal finger 120 causes the safety lug 125 (tip) of the spring metal finger 120 to bend away from the substrate 101 when a underlying release substance is removed. A stress-balancing pad 130 is formed on an anchor portion 122 of the spring metal finger 120, and made to include an internal stress (for example, negative internal stress) that counter balances the positive stress of the spring metal finger 120. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2001156404A

公开(公告)日：2001-06-08

申请号：JP2000342899

申请日：2000-11-10

Applicant: XEROX CORP

Inventor： KNEISSL MICHAEL ,  BOUR DAVID P ,  ROMANO LINDA T ,  KRUSOR BRENT S ,  NOBLE M JOHNSON

IPC: H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide refractive index guide-type inner stripe nitride laser diode structure. SOLUTION: The inner stripe nitride laser diode structure is provided with a multiple-quantum well layer and first and second surfaces, and is provided with a waveguide layer where the first surface is in contact with the multiple- quantum well layer, and a current-blocking layer entering the second surface of the waveguide layer and divided into two portions by a stripe groove. The current-blocking layer can be made of a short-period superlattice.