公开(公告)号：CA3037158C

公开(公告)日：2021-11-02

申请号：CA3037158

申请日：2019-03-19

Applicant: XEROX CORP ,  PALO ALTO RES CT INC

Inventor： CHOPRA NAVEEN ,  MCCONVILLE PAUL J ,  BELELIE JENNIFER L ,  CONDELLO ANTHONY S ,  STREET ROBERT A ,  JACKSON WARREN

IPC: B41F17/00 ,  B41M5/50

Abstract: The present teachings include a process, system and article for forming a printed image on a textile. The process includes coating the solution of an orthosilicate to form a silica network on the textile. The process includes applying an ink composition to the textile having the silica network on the textile, forming an image.

公开(公告)号：DE69637576D1

公开(公告)日：2008-08-14

申请号：DE69637576

申请日：1996-04-12

Applicant: XEROX CORP

Inventor： JACKSON WARREN B ,  BIEGELSEN DAVID K ,  STREET ROBERT A ,  WEISFIELD RICHARD L

IPC: H01L27/146 ,  H01L27/144 ,  H04N1/028

Abstract: An image sensor array has overlapping responsive zones, for detecting incident radiation. The sensor array includes a plurality of collection electrodes for sensing charge and a charge distribution layer in contact with the collection electrodes. The charge distribution layer is configured to distribute charge generated from incident radiation to more than one collection electrode, effectively providing overlapping responsive zones that reduce adverse aliasing effects.

公开(公告)号：DE60035665T2

公开(公告)日：2008-05-21

申请号：DE60035665

申请日：2000-12-13

Applicant: XEROX CORP

Inventor： MEI PING ,  LEMMI FRANCESCO ,  LU JENG PING ,  STREET ROBERT A ,  BOYCE JAMES B

IPC: H01L27/146 ,  H01L31/18

Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts (46) and intrinsic amorphous silicon layers (50). One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon (48) to serve as a buffer between the metal back contact (46) and the intrinsic amorphous silicon layer (50). Another method of eliminating the Schottky junction completely replaces the metal back contact (46) and the N doped amorphous silicon layer (48) with a substitute material such as N doped poly-silicon (504, Figure 5).

公开(公告)号：CA2588354A1

公开(公告)日：2007-11-19

申请号：CA2588354

申请日：2007-05-11

Applicant: XEROX CORP

Inventor： YANG SAN-MING ,  TAM MAN CHUNG ,  CHOPRA NAVEEN ,  KEOSHKERIAN BARKEV ,  STREET ROBERT A ,  DANIEL JURGEN H ,  SMITH PAUL F ,  KAZMAIER PETER M ,  MAHABADI HADI K

IPC: G02F1/167 ,  G09F9/37

Abstract: A method of displaying an image in an electrophoretic display device include s charging each of the sets of differently colored particles to have a differe nt charge through application of an electric field to the display fluid or the device, and then applying an electric field to selected ones of the multiplicity of reservoir s to effect movement of one or more of the differently colored sets of particles in the display fluid therein to display a desired color derived from among the sets of differently colored particles. The colors are shown by way of the particle set or sets moved to be closest to the viewing side conductive substrate of the device. The device m ay include at least one display layer, including a multiplicity of individual reservoirs containing a display fluid, between conductive substrates, at least one of which is transparent and thus may be a viewing side substrate, wherein the display fluid includes at least two sets of particles in a liquid medium, the at least two sets of particles exhibiting a different color.

公开(公告)号：DE60035665D1

公开(公告)日：2007-09-06

申请号：DE60035665

申请日：2000-12-13

Applicant: XEROX CORP

Inventor： MEI PING ,  LEMMI FRANCESCO ,  LU JENG PING ,  STREET ROBERT A ,  BOYCE JAMES B

IPC: H01L27/146 ,  H01L31/18

Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts (46) and intrinsic amorphous silicon layers (50). One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon (48) to serve as a buffer between the metal back contact (46) and the intrinsic amorphous silicon layer (50). Another method of eliminating the Schottky junction completely replaces the metal back contact (46) and the N doped amorphous silicon layer (48) with a substitute material such as N doped poly-silicon (504, Figure 5).

公开(公告)号：CA2127453C

公开(公告)日：2005-04-05

申请号：CA2127453

申请日：1993-01-06

Applicant: UNIV MICHIGAN ,  XEROX CORP

Inventor： ANTONUK LARRY E ,  STREET ROBERT A

IPC: A61B6/03 ,  A61N5/10 ,  G01T1/24 ,  G01T1/29 ,  H01L27/146 ,  H01L31/09 ,  H01L31/10 ,  H04N5/32 ,  G01T1/20

Abstract: A thin-film, flat panel, pixelated detector array serving as a real-time digital imager and dosimeter for diagnostic or megavoltage X rays or gamma rays, including a plurality of photodiodes made of hydrogenated amorphous silicon arrayed in columns and rows upon a glass substrate. Each photodiode is connected to a thin film field effect transistor also located upon the glass or quartz substrate. Upper and lower metal contacts are located below and above the photodiodes to provide the photodiodes with a reverse bias. The capacitance of each photodiode when multiplied by the resistance of the field effect transistor to which it is connected yields an RC time constant sufficiently small to allow fluoroscopic or radiographic imaging in real time.

公开(公告)号：AT191977T

公开(公告)日：2000-05-15

申请号：AT93902890

申请日：1993-01-06

Applicant: UNIV MICHIGAN ,  XEROX CORP

Inventor： ANTONUK LARRY E ,  STREET ROBERT A

IPC: A61B6/03 ,  A61N5/10 ,  G01T1/24 ,  G01T1/29 ,  H01L27/146 ,  H01L31/09 ,  H01L31/10 ,  H04N5/32

Abstract: A thin-film, flat panel, pixelated detector array serving as a real-time digital imager and dosimeter for diagnostic or megavoltage X rays or gamma rays, including a plurality of photodiodes made of hydrogenated amorphous silicon arrayed in columns and rows upon a glass substrate. Each photodiode is connected to a thin film field effect transistor also located upon the glass or quartz substrate. Upper and lower metal contacts are located below and above the photodiodes to provide the photodiodes with a reverse bias. The capacitance of each photodiode when multiplied by the resistance of the field effect transistor to which it is connected yields an RC time constant, tau RC, sufficiently small to allow fluoroscopic or radiographic imaging in real time. Specifically, where P=the pixel-pixel pitch in mu m, where DIFFERENCE 25

公开(公告)号：DE69323402T2

公开(公告)日：1999-07-15

申请号：DE69323402

申请日：1993-11-25

Applicant: XEROX CORP

Inventor： NELSON STEVEN A ,  STREET ROBERT A

IPC: A61B6/00 ,  G01T1/00 ,  G01T1/20 ,  G01T1/29 ,  G03B42/02 ,  H04N1/028 ,  H04N1/40 ,  H04N5/32 ,  H04N5/372 ,  H04N5/378 ,  H04N3/15 ,  H04N1/04

Abstract: A radiation imaging method and system for use in various imaging techniques includes a source (12) of spatially-separate radiation beams (13,14) at first and second wavelengths (L1,L2) respectively. The radiation beams pass through an object (18) to be imaged and are detected by a target array of sensors arranged in addressable lines (21). Each beam separately scans across each line of sensors to produce first and second outputs which are combined to produce a combined image signal that has increased contrast from that which would be produced by either the first or the second output alone. Preferably, the array is an amorphous silicon array and mean is provided for synchronously clocking sensor data from the array.

公开(公告)号：JP2002162575A

公开(公告)日：2002-06-07

申请号：JP2001297585

申请日：2001-09-27

Applicant: XEROX CORP

Inventor： STREET ROBERT A ,  PEETERS ERIC ,  ROSA MICHEL A ,  LU JENG PING ,  CHUA CHRISTOPHER L

IPC: G02B26/08 ,  G02B6/35 ,  H04Q11/00

Abstract: PROBLEM TO BE SOLVED: To provide an improved system for aligning optical components. SOLUTION: Optical cross switches, having the improved system for aligning the optical parts, are mounted. This system 106 utilizes highly transmittable sensors 170 and 172, arranged in the optical paths of light signals and determines the exact positions of the light signals 120. A feedback loop re-regulates the optical parts, by using the outputs from the highly transmittable sensors 170 and 172 and holds the light signals 120 at desired positions. This system 106 is particularly suitable for use in optical cross switches.

公开(公告)号：JP2000031453A

公开(公告)日：2000-01-28

申请号：JP12093599

申请日：1999-04-28

Applicant: XEROX CORP

Inventor： MEI PING ,  ANDREW J MOORE ,  LARGE B APTE ,  STEPHEN E LADY ,  STREET ROBERT A ,  JAMES B BOYCE

IPC: H01L27/146 ,  H03F3/08 ,  H04N5/335

Abstract: PROBLEM TO BE SOLVED: To achieve a trade-off between resolution and sensitivity, and pixel size or packing ratio and circuit complexity. SOLUTION: A circuit comprising a sensor 12, an amplifier connected by an output of the sensor 12 so as to control the amplifier, and a sensor-reset connected to the sensor 12 selectively resetting an electric charge in the sensor 12, and converting the data of the sensor 12 to an electrical signal can be improved by trading off the sensor-reset containing a reset-transistor with its channel region formed by a conductive material having a first structural state the amplifier containing an amplifier transistor 16 with its channel region formed by a conductive material having a converted first structural state, and the amplifier transistor 16 and the reset transistor formed on an common substrate.