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公开(公告)号：DE60101134D1
公开(公告)日：2003-12-11
申请号：DE60101134
申请日：2001-11-21
Applicant: XEROX CORP
Inventor： ROSA MICHAEL A , SUN DECAI
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公开(公告)号：JP2002246682A
公开(公告)日：2002-08-30
申请号：JP2001372217
申请日：2001-12-06
Applicant: XEROX CORP
Inventor： SUN DECAI , ROSA MICHEL A
Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive laser-incorporated micro electric/mechanical mechanism with high reliability by applying a flip chip method. SOLUTION: A first laser bonding pad 28 positioned on the first side of a laser 26 is arranged in adjacent to a first substrate bonding pad 14 at the upper face of the micro electric/mechanical mechanism substrate 10. A second laser bonding pad positioned on the second side of the laser 26 is disposed in adjacent to a second substrate bonding pad 18. A first solder connection part 38 which is brought into contact with the first substrate bonding pad 14 and the first laser bonding pad 28, and a second solder connection part 40 which is brought into contact with the second substrate bonding pad 18 and the second laser bonding pad are fused by solder reflow.
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24.发明专利
公开(公告)号：JP2002233997A
公开(公告)日：2002-08-20
申请号：JP2001356890
申请日：2001-11-22
Applicant: XEROX CORP
Inventor： ROSA MICHEL A , SUN DECAI
Abstract: PROBLEM TO BE SOLVED: To provide a microhinge provided with mechanical reliability and strength necessary for out-of-a plane rotation and motion in a vertical direction of a SOI device layer structure, and of a simple structure and low cost. SOLUTION: A micro-electromechanical assembly 18 comprises an out-of-plane device (for example a mirror) 22 formed in a single crystal silicon device layer in a silicon-on-insulator substrate and a flexible ribbon structure 20 formed in the device layer. The out-of-plane device 22 and the ribbon structure are integrated. The ribbon structure 20 has width or depth smaller than those of the out-of-plane device 22. One end of the out-of-plane device 22 and one end of the ribbon structure 20 are connected at a point.
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公开(公告)号：JP2002219698A
公开(公告)日：2002-08-06
申请号：JP2001356891
申请日：2001-11-22
Applicant: XEROX CORP
Inventor： SUN DECAI , ROSA MICHEL A
Abstract: PROBLEM TO BE SOLVED: To connect electrically a hinge component to a micro device by simple constitution. SOLUTION: The present invention provides a micro device formed on or in a device layer in a single crystal silicon substrate, and ribon structure (a ribon hinge) 42 used as one portion of a micro assembly. The ribon structure 42 is formed in the device layer as the micro device. A thickness of the ribon structure 42 is thinner than that of the micro device. A conductive material 65 is deposited on a surface of the ribon structure. The first end of the micro assembly and the first end of the ribon structure 42 are connected each other when realized as the one portion of the micro assembly. The ribon structure 42 and an off-plane device are integrated thereby as one component.
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Patent Agency Ranking26.发明专利
公开(公告)号：JP2010183120A
公开(公告)日：2010-08-19
申请号：JP2010120214
申请日：2010-05-26
Applicant: Xerox Corp , ゼロックス コーポレイションXerox Corporation
Inventor： HOFSTETTER DANIEL , DUNNROWICZ CLARENCE J , SUN DECAI , BRINGANS ROSS D , KNEISSL MICHAEL A
CPC classification number: B82Y20/00 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/343 , H01S5/34326 , H01S5/34333 , H01S5/4031 , H01S5/4043 , H01S5/4087
Abstract: PROBLEM TO BE SOLVED: To provide a monolithic multiple laser structure which has the capability of emitting a multiple wavelength laser beam of close intervals in a wide wavelength spectrum range from infrared to red and blue wavelengths.
SOLUTION: A red/infrared parallel type laser structure 100 is bonded to a blue laser structure 200 with solder bumps 402, 404 by flip-chip bonding to form a red/blue/infrared integrated laser structure 400 integrated by a hybrid method. The method allows a laser array structure having laser elements of different wavelengths to be manufactured, even in a semiconductor materials which are not suitable for a manufacturing method based on etching and regrowth.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供一种单片多重激光器结构，其具有在从红外到红色和蓝色波长的宽波长光谱范围内发射紧密间隔的多波长激光束的能力。 解决方案：红/红外并联型激光器结构100通过倒装芯片接合结合到具有焊料凸块402,404的蓝色激光器结构200，以形成通过混合方法集成的红/蓝/红外一体化激光器结构400 。 该方法允许制造具有不同波长的激光元件的激光阵列结构，即使在不适合基于蚀刻和再生长的制造方法的半导体材料中。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2002162576A
公开(公告)日：2002-06-07
申请号：JP2001284223
申请日：2001-09-19
Applicant: XEROX CORP
Inventor： SUN DECAI , MICHAEL A ROSA , PEETERS ERIC , LEMMI FRANCESCO , MAEDA PATRICK Y , CHUA CHRISTOPHER L
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a three-dimensional MEMS structure. SOLUTION: The method of manufacturing the molded optical MEMS component, having stress thin films has a step of providing the component with a substrate having a surface, a step of adhering a sacrificial layer onto this surface, a step of arranging a lift-off mask on the sacrificial layer in order to delineate the optical MEMS component, a step of adhering a stress gradient layer on the sacrificial layer, a step of removing the lift-off mask and portions of the stress gradient layer existing on the lift-off mask and a step of making the optical MEMS component, by releasing the stress gradient layer from the sacrificial layer.
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公开(公告)号：JPH11135893A
公开(公告)日：1999-05-21
申请号：JP24163598
申请日：1998-08-27
Applicant: XEROX CORP
Inventor： SUN DECAI
Abstract: PROBLEM TO BE SOLVED: To develop an independently accessible monolithic laser array which has an accurately defined and controlled oxide region, providing electrical and optical confinement. SOLUTION: Each laser in an edge-emitting laser array 100 comprises a wave guide 21 comprising a substrate, a plurality of semiconductor layers formed thereon, one or a plurality of semiconductor layers forming an active region, and a semiconductor layer formed on the active region. A wave guide 214 confining the light emitted from the active region is defined by a native oxide layer 212 formed in a trench 210 made in the semiconductor layer, while extending below the side face of the wave guide 214. The native oxide layer 212 gives the adjacent edge-emitting lasers in the array electrical isolation. First and second electrodes for biasing the active region are also provided.
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公开(公告)号：JPH11135879A
公开(公告)日：1999-05-21
申请号：JP24163698
申请日：1998-08-27
Applicant: XEROX CORP
Inventor： SUN DECAI
Abstract: PROBLEM TO BE SOLVED: To provide a ridge-waveguide semiconductor laser having a natural oxide layer, which imparts confinement. SOLUTION: To manufacture a ridge-waveguide semiconductor layer 100, including the following parts. A substrate 102 is provided, and an n-type Al0.5 In0.5 P first clad layer 104 is formed on the substrate 102. A non-doped Al0.4 Ga0.6 As first enclosing layer 106 forms the active layer on the first clad layer 4. A GaAs active layer 108 and a non-doped Gl0.4 Ga0.6 As second confinement layer 110 are formed. This is a ridge waveguide 208, which is formed of these parts and a p-type Al0.5 In0.5 P second clad layer 112, formed on the above described active region. The ridge waveguide 208 imparts an optical closing for the optical radiation from the active region. The ridge waveguide 208 is marked by a natural oxide layer 206 formed in a groove 204. The natural oxide layer 206 includes the ridge waveguide 208 formed of the second clad layer 112 and the active layer and first and second electrodes 216 and 218, which makes biasing of the active region possible.
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公开(公告)号：JP2009164640A
公开(公告)日：2009-07-23
申请号：JP2009101607
申请日：2009-04-20
Applicant: Xerox Corp , ゼロックス コーポレイションXerox Corporation
Inventor： SUN DECAI
CPC classification number: H01S5/4031 , H01S5/0425 , H01S5/2215
Abstract: PROBLEM TO BE SOLVED: To develop a monolithic independent addressable laser array for providing electric and optical confinement and accurately having an accurately defined and controlled oxide region.
SOLUTION: Each of edge emitting lasers of an array 100 of the edge emitting lasers includes: a substrate; a plurality of semiconductor layers formed on the substrate; one or one and more of the plurality of the semiconductor layers forming an active region; a waveguide 214 formed from the semiconductor layer on the active region wherein the waveguide 214 provides optical confinement in light emission from the active region, the waveguide 214 is defined by a natural oxide layer 212 formed on grooves 210, the grooves 210 are formed in the plurality of the semiconductor layers and the waveguide 214 extends downward to the side of the waveguide 214 formed from semiconductors; the natural oxide layer 212 giving electric separation to the adjacent edge emitting laser in the array; and a first electrode and a second electrode enabling bias of the active region.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题：开发用于提供电和光限制并准确地具有精确定义和受控氧化物区域的单片独立可寻址激光器阵列。 边缘发射激光器的阵列100的边缘发射激光器的每一个包括：基板; 形成在所述基板上的多个半导体层; 多个半导体层中的一个或多个形成有源区; 由有源区域上的半导体层形成的波导214，其中波导214在从有源区域发光的情况下提供光限制，波导214由形成在凹槽210上的自然氧化物层212限定，凹槽210形成在 多个半导体层和波导214向下延伸到由半导体形成的波导214的一侧; 天然氧化物层212向阵列中的相邻边缘发射激光器提供电分离; 以及使得能够偏置有源区的第一电极和第二电极。 版权所有（C）2009，JPO＆INPIT
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