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公开(公告)号：EP2562571B1
公开(公告)日：2016-12-28
申请号：EP12181707.6
申请日：2012-08-24
Applicant: Sumitomo Electric Industries, Ltd.
Inventor： Hirano, Masaaki , Haruna, Tetsuya , Tamura, Yoshiaki , Yamamoto, Yoshinori
CPC classification number: G02B6/02219 , C03B2201/07 , C03B2201/12 , C03B2201/20 , C03B2201/31 , C03B2201/50 , C03B2203/22 , C03B2203/23 , C03C3/06 , C03C13/045 , C03C2201/08 , G02B6/03611
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公开(公告)号：KR1020000011231A
公开(公告)日：2000-02-25
申请号：KR1019990011462
申请日：1999-04-01
Applicant: 도요타 지도샤(주)
IPC: G02F1/355
CPC classification number: G02F1/3555 , C03C3/06 , C03C3/076 , C03C3/11 , C03C2201/08 , C03C2201/12 , C03C2201/21
Abstract: PURPOSE: A SiO2-GeO2 nonlinear optical material is provided which easily reveals high nonlinear optical characteristics at weak electric field with high reliability, so as not to affect the other devices. CONSTITUTION: A nonlinear optical silica material comprising SiO2-GeO2 as a principal component, and either one or both of hydrogen or halogen atom, wherein the oxygen bonded to Ge in the silica material is substituted by a hydrogen or halogen. A nonlinear optical device has the nonlinear optical silica material formed on a substrate and an insulating layer interposed between the nonlinear optical silica material and the substrate.
Abstract translation: 目的：提供一种SiO2-GeO2非线性光学材料，其在弱电场下可以很好的显示高非线性光学特性，具有高可靠性，不影响其他器件。 构成：包含SiO 2 -GeO 2作为主要成分以及氢或卤素原子中的一个或两个的非线性光学二氧化硅材料，其中与二氧化硅材料中与Ge键合的氧被氢或卤素取代。 非线性光学器件具有在衬底上形成的非线性光学二氧化硅材料和介于非线性光学二氧化硅材料和衬底之间的绝缘层。
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公开(公告)号：KR1020130124279A
公开(公告)日：2013-11-13
申请号：KR1020137000462
申请日：2011-07-07
Applicant: 아사히 가라스 가부시키가이샤
CPC classification number: C03B20/00 , B29C33/38 , B29K2909/08 , B82Y10/00 , B82Y40/00 , C03B19/1453 , C03B2201/075 , C03B2201/42 , C03C3/06 , C03C2201/08 , C03C2201/23 , C03C2201/42 , C03C2203/44 , G03F7/0002
Abstract: 본 발명은 TiO
2 농도가 3 내지 8 질량％이며, OH 농도가 50 질량ppm 이하이며, 파장 365 nm에서의 두께 1 mm당의 내부 투과율 T
365 가 95％ 이상인, TiO
2 함유 석영 유리 기재에 관한 것이다.-
公开(公告)号：KR100366834B1
公开(公告)日：2003-01-15
申请号：KR1019990011462
申请日：1999-04-01
Applicant: 도요타 지도샤(주)
IPC: G02F1/355
CPC classification number: G02F1/3555 , C03C3/06 , C03C3/076 , C03C3/11 , C03C2201/08 , C03C2201/12 , C03C2201/21
Abstract: A nonlinear optical silica material mainly consisting of SiO2-GeO2 to which hydrogen or halogen element X is added. Oxygen bonded to Ge contained in the nonlinear optical silica material is replaced by H or X, and one Ge has two Ge-O bonds and one Ge-H (or Ge-X) bond at Ge. points where nonlinearity is exhibited in the silica material. The Ge-H (or Ge-X) bond does not relate to a crystal network, so that when the polarity is oriented in order to exhibit nonlinearity at Ge., an electric field to be applied can be lowered, and when a optical semiconductor hybrid element or the like is produced, other portions of the semiconductor elements can be prevented from being broken or degraded in performance. An insulating film can be interposed between the semiconductor substrate and the nonlinear optical silica film to prevent undesired impurities from dispersing into the semiconductor substrate and other elements and preventing a defect from being caused in the crystal of the substrate due to the silica film.
Abstract translation: 一种非线性光学二氧化硅材料，主要由加入氢或卤素元素X的SiO2-GeO2组成。 与非线性光学二氧化硅材料中包含的Ge键合的氧被H或X取代，并且一个Ge在Ge上具有两个Ge-O键和一个Ge-H（或Ge-X）键。 在二氧化硅材料中呈现非线性的点。 Ge-H（或Ge-X）键与晶体网络无关，因此当为了在Ge上呈现非线性而取向极性时，可以降低施加的电场，并且当光学半导体 混合元件等的制造，可以防止半导体元件的其他部分破裂或性能劣化。 可以在半导体基板和非线性光学二氧化硅膜之间插入绝缘膜，以防止不需要的杂质扩散到半导体基板和其他元件中，并且防止由于二氧化硅膜而在基板的晶体中引起缺陷。 ＆lt;图像＆GT;
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公开(公告)号：JP5942848B2
公开(公告)日：2016-06-29
申请号：JP2012523919
申请日：2011-07-07
Applicant: 旭硝子株式会社
IPC: C03C3/06 , C03B20/00 , H01L21/027 , C03B8/04
CPC classification number: C03B20/00 , B82Y10/00 , B82Y40/00 , C03B19/1453 , C03C3/06 , B29C33/38 , B29K2909/08 , C03B2201/075 , C03B2201/42 , C03C2201/08 , C03C2201/23 , C03C2201/42 , C03C2203/44 , G03F7/0002
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Patent Agency Ranking
公开(公告)号：JPWO2012005333A1
公开(公告)日：2013-09-05
申请号：JP2012523919
申请日：2011-07-07
Applicant: 旭硝子株式会社
IPC: C03B8/04 , B29C59/02 , C03B20/00 , C03C3/06 , H01L21/027
CPC classification number: C03B20/00 , B29C33/38 , B29K2909/08 , B82Y10/00 , B82Y40/00 , C03B19/1453 , C03B2201/075 , C03B2201/42 , C03C3/06 , C03C2201/08 , C03C2201/23 , C03C2201/42 , C03C2203/44 , G03F7/0002
Abstract: 本発明は、TiO2濃度が3〜8質量%であり、OH濃度が50質量ppm以下であり、波長365nmにおける厚さ1mmあたりの内部透過率T365が95%以上である、TiO2含有石英ガラス基材に関する。
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公开(公告)号：JP2004026586A
公开(公告)日：2004-01-29
申请号：JP2002186598
申请日：2002-06-26
Applicant: Tohos Sgm Kk , Tosoh Corp , 東ソ−・エスジ−エム株式会社 , 東ソー株式会社
Inventor： HORIKOSHI HIDEHARU
CPC classification number: C03C3/06 , C03C2201/08 , C03C2201/23
Abstract: PROBLEM TO BE SOLVED: To provide a low cost synthetic quartz glass for vacuum ultraviolet light which has excellent properties and is manufactured using an existing general equipment without carrying out excessive and needless modification of a quartz glass synthesized by the soot method (VAD method) using a glass forming raw material such as SiCl
4 and a manufacturing method of the same and a mask substrate for vacuum ultraviolet light using the same.
SOLUTION: The synthetic quartz glass for vacuum ultraviolet light contains 5-20 ppm OH group and ≤50 ppm halogen element and has ≤0.1 cm
-1 absorption coefficient to the vacuum ultraviolet light having 163 nm wave length and ≤0.01 cm
-1 variation of the absorption coefficient in 163 nm wave length when the vacuum ultraviolet light is emitted. The manufacturing method of the same and the mask substrate for vacuum ultraviolet light using the same are provided.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：EP2562571A3
公开(公告)日：2015-05-27
申请号：EP12181707.6
申请日：2012-08-24
Applicant: Sumitomo Electric Industries, Ltd.
Inventor： Hirano, Masaaki , Haruna, Tetsuya , Tamura, Yoshiaki , Yamamoto, Yoshinori
CPC classification number: G02B6/02219 , C03B2201/07 , C03B2201/12 , C03B2201/20 , C03B2201/31 , C03B2201/50 , C03B2203/22 , C03B2203/23 , C03C3/06 , C03C13/045 , C03C2201/08 , G02B6/03611
Abstract: An optical fiber includes a core section and a cladding section. A k value expressed by k = 4Aeff/(πMFD 2 ) is 1.08 or larger, Aeff being an effective area and MFD being a mode field diameter, at a wavelength of 1550 nm, a chromatic dispersion is in a range from +19.0 ps/nm/km to +21.9 ps/nm/km, and MFD is in a range from 10.3 µm to 13.0 µm. The inequality, r 1 2 3 , is established, R = r 3 /r 2 is larger than 1.0 and equal to or smaller than 5.4, and a relative refractive index difference Δ 12 of the maximum value N 2 with respect to the minimum value N 1 is 0.05% or higher, r 1 and r 2 being radial positions respectively with minimum and maximum value N 1 and N 2 of a refractive index in the core section and r 3 being a radius of the core section.
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公开(公告)号：EP2562571A2
公开(公告)日：2013-02-27
申请号：EP12181707.6
申请日：2012-08-24
Applicant: Sumitomo Electric Industries, Ltd.
Inventor： Hirano, Masaaki , Haruna, Tetsuya , Tamura, Yoshiaki , Yamamoto, Yoshinori
CPC classification number: G02B6/02219 , C03B2201/07 , C03B2201/12 , C03B2201/20 , C03B2201/31 , C03B2201/50 , C03B2203/22 , C03B2203/23 , C03C3/06 , C03C13/045 , C03C2201/08 , G02B6/03611
Abstract: An optical fiber includes a core section and a cladding section. A k value expressed by k = 4Aeff/(πMFD 2 ) is 1.08 or larger, Aeff being an effective area and MFD being a mode field diameter, at a wavelength of 1550 nm, a chromatic dispersion is in a range from +19.0 ps/nm/km to +21.9 ps/nm/km, and MFD is in a range from 10.3 µm to 13.0 µm. The inequality, r 1 2 3 , is established, R = r 3 /r 2 is larger than 1.0 and equal to or smaller than 5.4, and a relative refractive index difference Δ 12 of the maximum value N 2 with respect to the minimum value N 1 is 0.05% or higher, r 1 and r 2 being radial positions respectively with minimum and maximum value N 1 and N 2 of a refractive index in the core section and r 3 being a radius of the core section.
Abstract translation: 光纤包括芯部和包层部。 由k = 4Aeff /（-MFD 2）表示的k值为1.08以上，Aeff为有效面积，MFD为模场直径，波长为1550nm，色散在+19.0ps / nm / km至+ 21.9ps / nm / km，MFD在10.3μm至13.0μm的范围内。 建立不等式，r 1
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公开(公告)号：EP0977079B1
公开(公告)日：2007-03-28
申请号：EP99113808.2
申请日：1999-07-14
Applicant: Toyota Jidosha Kabushiki Kaisha
Inventor： Nagashima, Tomonori , Nakamura, Naoki
IPC: G02F1/355
CPC classification number: G02F1/3555 , C03C3/06 , C03C3/076 , C03C3/11 , C03C2201/08 , C03C2201/12 , C03C2201/21
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