Image display device
    21.
    发明专利
    Image display device 审中-公开
    图像显示设备

    公开(公告)号:JP2010251102A

    公开(公告)日:2010-11-04

    申请号:JP2009098833

    申请日:2009-04-15

    Inventor: TSUJINO KAZUYA

    Abstract: PROBLEM TO BE SOLVED: To uniformize the trajectory of an electron beam, in a pixel within an electron emitting element having a plurality of electron-emitting parts in a pixel. SOLUTION: In the image display device having the plurality of electron emitting parts 12, in which a gate 4 and a cathode 6 are arranged facing each other, in an X-direction; electron beam control electrodes 13a and 13b are arranged respectively on an external side of an electron emitting parts 12 positioned at an end in the X-direction; the electron beam control electrode 13a having the gate 4, arranged between it and the electron-emitting parts 12 is connected to the cathode 6, and the electron beam control electrode 13b, having the cathode 6 between it and the electron-emitting parts 12 is connected to the gate 4. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:在像素内具有多个电子发射部分的电子发射元件内的像素中使电子束的轨迹均匀化。 解决方案:在具有多个电子发射部分12的图像显示装置中,其中栅极4和阴极6彼此面对地布置在X方向上; 电子束控制电极13a,13b分别配置在位于X方向端部的电子发射部12的外侧, 设置在其与电子发射部分12之间的具有栅极4的电子束控制电极13a连接到阴极6,并且在其和电子发射部分12之间具有阴极6的电子束控制电极13b是 连接到大门4.版权所有(C)2011,JPO&INPIT

    전자 방출 소자 및 이를 구비한 발광 장치 및 전자 방출소자 제조 방법
    26.
    发明授权
    전자 방출 소자 및 이를 구비한 발광 장치 및 전자 방출소자 제조 방법 失效
    电子发射装置,其发光装置及其制造方法

    公开(公告)号:KR100879473B1

    公开(公告)日:2009-01-20

    申请号:KR1020070094160

    申请日:2007-09-17

    Abstract: An electron-emissive element and a light emitting device are provided to minimize remaining coal in the surface of an electron emission unit and increase the emission efficiency of electronics by using a non-photosensitive / low temperature resolvability binder when an electronic emitting layer is coated with screen printing. An electron-emissive element(20) comprises first electrodes(22), second electrodes(24), first electron emission units(26), and second electron emission units(38). The first electrodes is extended to the first direction on the substrate. The first electrodes are separated from each other. The second electrodes are extended to second direction opposite to the first direction. The second electrodes are positioned between the first electrodes. The first electron emission unit is formed in the side of the first electrodes. The second electron emission unit is formed in the side of the second electrodes. Gap is formed between the first electron emission units and the second electron emission units which are adjacent.

    Abstract translation: 提供电子发射元件和发光器件以最小化电子发射单元的表面中的剩余煤,并且当电子发射层涂覆有电子发射层时,通过使用非光敏/低温可分解性粘合剂来增加电子器件的发射效率 丝网印刷。 电子发射元件(20)包括第一电极(22),第二电极(24),第一电子发射单元(26)和第二电子发射单元(38)。 第一电极在衬底上延伸到第一方向。 第一电极彼此分离。 第二电极延伸到与第一方向相反的第二方向。 第二电极位于第一电极之间。 第一电子发射单元形成在第一电极的侧面。 第二电子发射单元形成在第二电极的侧面。 在第一电子发射单元和邻近的第二电子发射单元之间形成间隙。

    급격한 금속-절연체 전이를 이용한 전자방출소자 및 이를포함하는 디스플레이
    27.
    发明公开
    급격한 금속-절연체 전이를 이용한 전자방출소자 및 이를포함하는 디스플레이 失效
    使用绝缘金属绝缘体过渡的电子发射装置和包括它的显示器

    公开(公告)号:KR1020070024329A

    公开(公告)日:2007-03-02

    申请号:KR1020060018507

    申请日:2006-02-25

    Abstract: An electron emission device using an abrupt metal-insulator transition and a display including the same are provided to increase an electron emission rate by emitting electrons to a gap between divided portions of a metal-insulator transition material layer. An electron emission device includes a substrate(102), a metal-insulator transition material layer(106) disposed on the substrate and divided by a predetermined gap with portions of the divided metal-insulator transition material layer facing one another, and electrodes(110,112) connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer. A width of the gap is in a range of about 5 to 200 nm.

    Abstract translation: 提供使用突变金属 - 绝缘体转变的电子发射装置和包括其的显示器,以通过向金属 - 绝缘体转移材料层的分割部分之间的间隙发射电子来增加电子发射速率。 一种电子发射装置,包括:衬底(102);金属 - 绝缘体转移材料层(106),设置在衬底上并与被划分的金属 - 绝缘体转移材料层彼此面对的部分分开预定的间隙;以及电极(110,112 )连接到用于发射电子的划分的金属 - 绝缘体转移材料层的每个部分到分开的金属 - 绝缘体转移材料层的部分之间的间隙。 间隙的宽度在约5至200nm的范围内。

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