公开(公告)号：EP0272178A1

公开(公告)日：1988-06-22

申请号：EP87402646.1

申请日：1987-11-24

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： Baptist, Robert ,  Brenac, Ariel ,  Chauvet, Gérard ,  Meyer, Robert ,  Muller, Francis

IPC: H01J1/30 ,  H01J37/073 ,  H01J3/02

CPC classification number: H01J3/022 ,  G21K1/16 ,  H01J1/3042 ,  H01J37/073 ,  H01J2203/0296

Abstract: Source d'électrons polarisés de spin, utilisant une cathode émissive à micropointes, application en physique des interactions électrons-matière ou électrons-particules, physique des plasmas, microscopie électronique.
Au moins une portion (12) de chaque micropointe (10), incluant le sommet de celle-ci, est ferromagnétique, de façon que les électrons émis par la cathode (16) soient polarisés de spin suivant une direction donnée, lorsque chaque portion est soumise à un champ magnétique parallèle à cette direction donnée.

公开(公告)号：EP0684624A1

公开(公告)日：1995-11-29

申请号：EP95107677.7

申请日：1995-05-19

Applicant: NEC CORPORATION

Inventor： Toshio, Baba, c/o NEC Corporation ,  Masashi, Mizuta, c/o NEC Corporation ,  Omori, Tsunehiko ,  Kurihara, Yoshimasa ,  Nakanishi, Tsutomu

IPC: H01J1/34

CPC classification number: H01J1/34 ,  H01J2203/0296

Abstract: 5 n7 There are provided on a substrate (2) a block layer (4) having an electron affinity smaller than that of the substrate (2), a p-type strained superlattice structure (6) having no lattice relaxation and operating as a generation region of spin polarized electrons and a surface layer (8) for accommodating a bending portion of the energy band. The superlattice structure (6) is formed of a multilayer in which a strained well layer (12) and a barrier layer (14) are alternately laminated plural times. The strained well layer (12) has a lattice constant greater than that of the substrate and a thickness equal to or less than a wavelength of electron wave, and the barrier layer (14) has a conduction band lower in energy than that of the strained well layer (12) and a thickness such that an electron in the conduction band can transmit based on tunnel effect. A difference in energy between the band for heavy holes and the band for light holes is further widened in the valence band of the superlattice structure (6) due to compressive stress in the strained well layer (12).

Abstract translation: 在基板（2）上设置具有小于基板（2）的电子亲和力的阻挡层（4），没有晶格弛豫的p型应变超晶格结构（6）作为发生区域 自旋极化电子和用于容纳能带的弯曲部分的表面层（8）。 超晶格结构（6）由多层构成，其中应变阱层（12）和阻挡层（14）交替层叠多次。 应变阱层（12）的晶格常数大于衬底的晶格常数，并且厚度等于或小于电子波的波长，并且阻挡层（14）的能带的能带低于应变的 阱层（12）和厚度，使得导带中的电子可以基于隧道效应传输。 由于应变阱层（12）中的压应力，超晶格结构（6）的价带中的重孔的带和光孔带之间的能量差异进一步加宽。

公开(公告)号：EP0512429A1

公开(公告)日：1992-11-11

申请号：EP92107431.6

申请日：1992-04-30

Applicant: DAIDO TOKUSHUKO KABUSHIKI KAISHA

Inventor： Nakanishi, Tsutomu ,  Horinaka, Hiromichi ,  Saka, Takashi ,  Kato, Toshihiro

IPC: H01J3/02 ,  H01J1/34

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A semiconductor device (10) for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer (14) formed of gallium arsenide phosphide, GaAs 1-x P x , and having a first lattice constant; a second compound semiconductor layer (16) grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant; and a fraction, x, of the gallium arsenide phosphide GaAs 1-x P x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, ε R , of not less than 2.0 x 10⁻³ in the second layer. The fraction x of the gallium arsenide phosphide GaAs 1-x P x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.

Abstract translation: 一种用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的第一晶格常数的第一化合物半导体层（14）的高度自旋极化的电子束的半导体器件（10） 在所述第一化合物半导体层上生长有砷化镓（GaAs）的第二化合物半导体层（16），并且具有与所述第一晶格常数不同的第二晶格常数; 和砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t定义第一和第二晶格常数之间的失配量，使得失配量提供残余应变， εR在第二层中不小于2.0×10 -3 <3。 砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t可以限定第一和第二晶格常数之间的失配的大小，使得失配的大小提供了重的和 在第二层中的光空穴带，使得能量分裂大于第二层中的热噪声能量。

公开(公告)号：JP3985033B2

公开(公告)日：2007-10-03

申请号：JP51106596

申请日：1995-09-21

Applicant: ネヴァダ・アセット・リキデイターズ・エルエルシイ

Inventor： ディー． ハート，トマス ,  エー． ハルパイン，スコット

IPC: G11B7/00 ,  G11B9/10 ,  G11B5/00 ,  G11B5/012 ,  G11B5/64 ,  G11B7/004 ,  G11B11/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/04 ,  G11B19/04 ,  G11B20/18 ,  G11B23/28 ,  G11C11/02 ,  G11C11/16 ,  G11C11/23 ,  H01J3/02 ,  H01J29/48 ,  H01J31/60

CPC classification number: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/045 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J31/60 ,  H01J2203/0296 ,  H01J2237/06383

公开(公告)号：JP4018261B2

公开(公告)日：2007-12-05

申请号：JP29378298

申请日：1998-10-15

Applicant: ネヴァダ・アセット・リキデイターズ・エルエルシイ

Inventor： ディー． ハート，トマス

IPC: G11B7/00 ,  G11B9/10 ,  G11B5/00 ,  G11B5/012 ,  G11B5/64 ,  G11B7/004 ,  G11B11/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/04 ,  G11B19/04 ,  G11B20/18 ,  G11B23/28 ,  G11C11/02 ,  G11C11/16 ,  G11C11/23 ,  H01J3/02 ,  H01J29/48 ,  H01J31/60

CPC classification number: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/045 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J31/60 ,  H01J2203/0296 ,  H01J2237/06383

公开(公告)号：US08552398B2

公开(公告)日：2013-10-08

申请号：US13715662

申请日：2012-12-14

Applicant: Consiglio Nazionale Delle Ricerche

Inventor： Vincenzo Grillo ,  Lorenzo Marrucci ,  Ebrahim Karimi ,  Enrico Santamato

IPC: H01J37/26

CPC classification number: H01J37/26 ,  G21K1/16 ,  H01J3/02 ,  H01J37/06 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: An apparatus for spin polarizing a particle beam is adapted to process an input particle beam in such a way as to generate an at least partially spin polarized output particle beam. A vortex beam generator for imparting orbital angular momentum to the input particle beam. An electromagnetic field generator generates a transverse magnetic field, space-variant and symmetric with respect to the axis of the input particle beam, in such a way as to change the spin of the particles and attach thereto different values of orbital angular momentum in dependence on their input spin values. A beam component separating group spatially separates the particles in dependence on their orbital angular momentum values, in such a way as to obtain the at least partially spin polarized output particle beam.

Abstract translation: 用于自旋极化粒子束的装置适于处理输入粒子束，以便产生至少部分旋转偏振的输出粒子束。 用于将轨道角动量传递给输入粒子束的涡流束发生器。 电磁场发生器以相对于输入粒子束的轴线的空间变化和对称的方式产生横向磁场，以便改变粒子的旋转，并依附于其上附加不同的轨道角动量值 他们的输入自旋值。 光束分量分组基于其轨道角动量值空间上分离颗粒，以获得至少部分自旋极化输出粒子束。

公开(公告)号：US07459682B2

公开(公告)日：2008-12-02

申请号：US11559842

申请日：2006-11-14

Applicant: Wen-Hui Duan ,  Shao-Gang Hao ,  Gang Zhou ,  Jian Wu ,  Bing-Lin Gu

Inventor： Wen-Hui Duan ,  Shao-Gang Hao ,  Gang Zhou ,  Jian Wu ,  Bing-Lin Gu

IPC: G01N23/00

CPC classification number: H01J1/304 ,  G01Q60/16 ,  H01J2201/30434 ,  H01J2201/30488 ,  H01J2203/0296 ,  Y10S977/815 ,  Y10S977/822 ,  Y10S977/838 ,  Y10S977/849 ,  Y10S977/86 ,  Y10S977/861

Abstract: An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.

Abstract translation: 示例性的自旋极化电子源包括阴极和由具有局部极化间隙状态的化合物（例如III-V族）半导体制成的一维纳米结构。 一维纳米结构包括与阴极电连接的第一端部和位于/远离阴极的第二端部。 一维纳米结构的第二端部用作极化电子发射尖端，并且被配置（即，构造和布置），用于在可选择地对磁场感应和 当向阴极施加预定的负偏压时，圆偏振光束激发。 此外，还提供了包含这种自旋极化电子源的自旋极化扫描隧道显微镜。

公开(公告)号：US06304481B1

公开(公告)日：2001-10-16

申请号：US09612221

申请日：2000-07-07

Applicant: Thomas D. Hurt

Inventor： Thomas D. Hurt

IPC: G11C1300

CPC classification number: G11B23/281 ,  G11B5/00 ,  G11B5/64 ,  G11B5/65 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/045 ,  G11B19/04 ,  G11B20/1883 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J2203/0296

Abstract: A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength “characteristic” of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

Abstract translation: 一种数据存储装置，包括基板，基板上的数据存储层和自旋极化电子源。 数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。 在数据存储层中创建数据磁场。 数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。 通过提供具有电子磁场的自旋极化电子，数据存储在数据存储层中，该电子磁场具有与第一和第二数据值中的一个数据值相对应的极化方向，电子具有不成对电子的波长“特性” 数据存储层，其引起材料的磁矩，并将自旋极化电子引导到数据磁场，以将电子磁场的极化方向赋予数据磁场。 通过在数据磁场处引导第二波长的自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。 或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

公开(公告)号：US6040587A

公开(公告)日：2000-03-21

申请号：US208861

申请日：1998-12-10

Applicant: Katsumi Kishino ,  Toshihiro Kato

Inventor： Katsumi Kishino ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J37/073 ,  H01L29/06

CPC classification number: H01J37/073 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Abstract translation: 一种电子发射元件，包括具有分裂价带的半导体光电子层，并且能够在发射表面上引入激发激光辐射时从其发射表面发射自旋极化电子束;以及反射镜，形成在 远离发射表面的光电子层的相对侧之一与发射表面配合以在入射激光辐射之间实现多次反射。 发光元件可以设置有用于调制入射在光电子层上的激光辐射的强度的半导体光调制元件。 激光源可以与发光元件一体地形成并且设置在远离发射表面的光电子层的侧面上。

公开(公告)号：US5877510A

公开(公告)日：1999-03-02

申请号：US807216

申请日：1997-02-28

Applicant: Toshio Baba ,  Masashi Mizuta ,  Tsunehiko Omori ,  Yoshimasa Kurihara ,  Tsutomu Nakanishi

Inventor： Toshio Baba ,  Masashi Mizuta ,  Tsunehiko Omori ,  Yoshimasa Kurihara ,  Tsutomu Nakanishi

IPC: H01J1/34 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC classification number: H01J1/34 ,  H01J2203/0296

Abstract: There are provided on a substrate a block layer having an electron affinity smaller than that of the substrate, a p-type strained superlattice structure having no lattice relaxation and operating as a generation region of spin polarized electrons and a surface layer for accommodating a bending portion of the energy band. The superlattice structure is formed of a multilayer in which a strained well layer and a barrier layer are alternately laminated plural times. The strained well layer has a lattice constant greater than that of the substrate and a thickness equal to or less than a wavelength of electron wave, and the barrier layer has a conduction band lower in energy than that of the strained well layer and a thickness such that an electron in the conduction band can transmit based on tunnel effect. A difference in energy between the band for heavy holes and the band for light holes is further widened in the valence band of the superlattice structure due to compressive stress in the strained well layer.

Abstract translation: 在基板上设置具有小于基板的电子亲和力的阻挡层，不具有晶格弛豫并作为自旋极化电子的产生区域工作的p型应变超晶格结构和用于容纳弯曲部分的表面层 的能量带。 超晶格结构由多层构成，其中应变阱层和阻挡层交替层叠多次。 应变阱层的晶格常数大于衬底的晶格常数，并且厚度等于或小于电子波的波长，并且阻挡层的能带的能带低于应变阱层的导带， 导带中的电子可以基于隧道效应传输。 由于应变阱层中的压应力，超晶格结构的价带中的重孔带和光孔带之间的能量差异进一步扩大。