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    Projection imaging type electron microscope
    21.
    发明授权
    Projection imaging type electron microscope 有权
    投影成像式电子显微镜

    公开(公告)号：US07423268B2

    公开(公告)日：2008-09-09

    申请号：US11177140

    申请日：2005-07-08

    Applicant: Weiming Ren

    Inventor： Weiming Ren

    IPC: G01N21/00 ,  G21K7/00

    CPC classification number: H01J37/04 ,  H01J37/26 ,  H01J2237/04928 ,  H01J2237/262

    Abstract: It is an object of the present invention to provide an projection imaging type electron microscope in which the imposition of restrictions on the design of the illumination electron optical system by the conditions of the projection electron optical system is alleviated, so that the degree of freedom in the design of the illumination electron optical system is increased. Generated electrons 6b (principal rays) emitted from the sample 5 parallel to the optical axis are focused by a cathode lens so that these electrons cross the optical axis 3 at one point. This point is the first crossover. The generated electrons 6b are oriented parallel to the optical axis by the cathode lens 4a, and are focused as an image at the position of the electromagnetic prism 2; these electrons pass through the stigmator 7, and are incident on the relay lens 8a. These electrons are again focused, and cross the optical axis 3 at one point. This position is the second crossover. An aperture diaphragm 11 is disposed in this second crossover position. As a result, the need to install an aperture diaphragm in the first crossover position is eliminated, so that design of the illumination electron optical system is facilitated.

    Abstract translation: 本发明的目的是提供一种投影成像型电子显微镜，其中通过投影电子光学系统的条件对照明电子光学系统的设计施加限制，使得自由度 照明电子光学系统的设计增加。 从样品5发射的与光轴平行的发生的电子6b（主光线）被阴极透镜聚焦，使得这些电子在一个点处与光轴3交叉。 这一点是第一个交叉。 所产生的电子6b通过阴极透镜4a与光轴平行定向，并且作为图像聚焦在电磁棱镜2的位置处; 这些电子通过标示器7，并入射到中继透镜8a上。 这些电子再次被聚焦，并且在一个点处与光轴3交叉。 这个位置是第二个交叉。 孔径光阑11设置在该第二交叉位置。 结果，消除了在第一交叉位置安装孔径光阑的需要，从而便于照明电子光学系统的设计。

    Projection imaging type electron microscope
    22.
    发明申请
    Projection imaging type electron microscope 有权
    投影成像式电子显微镜

    公开(公告)号：US20060011833A1

    公开(公告)日：2006-01-19

    申请号：US11177140

    申请日：2005-07-08

    Applicant: Weiming Ren

    Inventor： Weiming Ren

    IPC: G21K7/00

    CPC classification number: H01J37/04 ,  H01J37/26 ,  H01J2237/04928 ,  H01J2237/262

    Abstract: It is an object of the present invention to provide an projection imaging type electron microscope in which the imposition of restrictions on the design of the illumination electron optical system by the conditions of the projection electron optical system is alleviated, so that the degree of freedom in the design of the illumination electron optical system is increased. Generated electrons 6b (principal rays) emitted from the sample 5 parallel to the optical axis are focused by a cathode lens so that these electrons cross the optical axis 3 at one point. This point is the first crossover. The generated electrons 6b are oriented parallel to the optical axis by the cathode lens 4a, and are focused as an image at the position of the electromagnetic prism 2; these electrons pass through the stigmator 7, and are incident on the relay lens 8a. These electrons are again focused, and cross the optical axis 3 at one point. This position is the second crossover. An aperture diaphragm 11 is disposed in this second crossover position. As a result, the need to install an aperture diaphragm in the first crossover position is eliminated, so that design of the illumination electron optical system is facilitated.

    Abstract translation: 本发明的目的是提供一种投影成像型电子显微镜，其中通过投影电子光学系统的条件对照明电子光学系统的设计施加限制，使得自由度 照明电子光学系统的设计增加。 从样品5发射的与光轴平行的发生的电子6b（主光线）被阴极透镜聚焦，使得这些电子在一个点处与光轴3交叉。 这一点是第一个交叉。 所产生的电子6b通过阴极透镜4a与光轴平行定向，并且作为图像聚焦在电磁棱镜2的位置处; 这些电子通过标示器7，并入射到中继透镜8a上。 这些电子再次被聚焦，并且在一个点处与光轴3交叉。 这个位置是第二个交叉。 孔径光阑11设置在该第二交叉位置。 结果，消除了在第一交叉位置安装孔径光阑的需要，从而便于照明电子光学系统的设计。

    Projection lithography device utilizing charged particles
    23.
    发明授权
    Projection lithography device utilizing charged particles 失效
    投影光刻装置利用带电粒子

    公开(公告)号：US06326629B1

    公开(公告)日：2001-12-04

    申请号：US09392685

    申请日：1999-09-09

    Applicant: Marcellinus P. C. M. Krijn

    Inventor： Marcellinus P. C. M. Krijn

    IPC: H01J37302

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: An object (14) is imaged on an imaging surface (16) by means of a telescopic system of rotationally symmetrical electron lenses (10, 12). The imaging system includes two quadrupoles, each of which coincides with one of the two round lenses (10, 12), so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system remains telescopic to a high degree and the imaging remains stigmatic.

    Abstract translation: 物体（14）通过旋转对称电子透镜（10,12）的伸缩系统成像在成像表面（16）上。 成像系统包括两个四极，每个四极都与两个圆形透镜（10,12）中的一个重合，使得电子集中在线状焦点而不是（小）圆形交叉（18）。 该系统保持高度的伸缩性，并且成像仍然是肮脏的。

    QUADRUPOLE DEVICE FOR PROJECTION LITHOGRAPHY BY MEANS OF CHARGED PARTICLES
    25.
    发明申请
    QUADRUPOLE DEVICE FOR PROJECTION LITHOGRAPHY BY MEANS OF CHARGED PARTICLES 审中-公开
    用于通过充电颗粒进行投影计算的四元装置

    公开(公告)号：WO00014767A1

    公开(公告)日：2000-03-16

    申请号：PCT/EP1999/006637

    申请日：1999-09-07

    IPC: G03F7/20 ,  H01J37/04 ,  H01J37/141 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: According to a known projection lithography method an object (14) is imaged on an imaging surface (16) by means of a telescopic system of rotationally symmetrical electron lenses (10, 12). The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas (18) with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles (32, 34, 36, 38, 40), so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

    Abstract translation: 根据已知的投影光刻方法，通过旋转对称的电子透镜（10,12）的伸缩系统将物体（14）成像在成像表面（16）上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 本发明允许在具有高电流浓度的区域（18）中避免更大的束流。 为此，成像系统包括五个相互垂直的四极（32,34,36,38,40），使得电子集中在线状焦点而不是（小）圆形交叉（18）。 该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

    PROJECTION LITHOGRAPHY DEVICE UTILIZING CHARGED PARTICLES
    26.
    发明申请
    PROJECTION LITHOGRAPHY DEVICE UTILIZING CHARGED PARTICLES 审中-公开
    使用充电颗粒的投影光刻设备

    公开(公告)号：WO00014766A1

    公开(公告)日：2000-03-16

    申请号：PCT/EP1999/006636

    申请日：1999-09-07

    IPC: G03F7/20 ,  G03F9/02 ,  H01J37/04 ,  H01J37/141 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: According to a known projection lithography method an object (14) is imaged on an imaging surface (16) by means of a telescopic system of rotationally symmetrical electron lenses (10, 12). The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is subject to a limit which is imposed by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas (18) with a high current concentration are avoided. To this end, the imaging system includes two quadrupoles, each of which coincides with one of the two round lenses (10, 12), so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system remains telescopic to a high degree and the imaging remains stigmatic.

    Abstract translation: 根据已知的投影光刻方法，通过旋转对称电子透镜（10,12）的伸缩系统将物体（14）成像在成像表面（16）上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 本发明允许在具有高电流浓度的区域（18）中避免较大的束流。 为此，成像系统包括两个四极，每个四极都与两个圆形透镜（10,12）中的一个重合，使得电子集中在线形焦点而不是（小）圆形交叉 （18）。 该系统保持高度可伸缩性，并且成像仍然是眩目的。

    QUADRUPOLE DEVICE FOR PROJECTION LITHOGRAPHY BY MEANS OF CHARGED PARTICLES
    27.
    发明公开
    QUADRUPOLE DEVICE FOR PROJECTION LITHOGRAPHY BY MEANS OF CHARGED PARTICLES 有权
    四极SYSTEM FOR投影光刻受货载体颗粒

    公开(公告)号：EP1046184A1

    公开(公告)日：2000-10-25

    申请号：EP99946148.6

    申请日：1999-09-07

    Applicant: Koninklijke Philips Electronics N.V.

    Inventor： KRIJN, Marcellinus, P., C., M.

    IPC: H01J37/317 ,  H01J37/30

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: According to a known projection lithography method an object (14) is imaged on an imaging surface (16) by means of a telescopic system of rotationally symmetrical electron lenses (10, 12). The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas (18) with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles (32, 34, 36, 38, 40), so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

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