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    NANOCLUSTER PRODUCTION DEVICE
    21.
    发明公开
    NANOCLUSTER PRODUCTION DEVICE 有权
    VORRICHTUNG ZUR HERSTELLUNG VON NANOCLUSTERN

    公开(公告)号：EP3006594A4

    公开(公告)日：2017-01-04

    申请号：EP14803503

    申请日：2014-05-26

    Applicant: JAPAN SCIENCE & TECH AGENCY ,  AYABO CORP

    Inventor： NAKAJIMA ATSUSHI ,  TSUNOYAMA HIRONORI ,  ZHANG CHUHANG ,  AKATSUKA HIROKI ,  TSUKAMOTO KEIZO

    IPC: C23C14/32 ,  C23C14/35 ,  H01J27/20 ,  H01J37/08 ,  H01J37/34

    CPC classification number: H01J37/3405 ,  C23C14/14 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/08 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3467 ,  H01J2237/081 ,  H01J2237/0812

    Abstract: Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a nanocluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the nanocluster growth cell.

    Abstract translation: 使用纳米簇生产装置改善纳米簇的尺寸和结构的控制。 希望增加具有尺寸和结构的纳米簇的获得量和产率，其中至少一个被选择。 纳米簇生产装置具有真空室，通过脉冲放电产生等离子体的溅射源，向溅射源供给脉冲功率的脉冲电源，向溅射源供给第一惰性气体的第一惰性气体供给装置， 存储在真空室中的纳米簇生长细胞和将第二惰性气体引入纳米簇生长细胞的第二惰性气体引入装置。

    ION GENERATION APPARATUS, THIN FILM FORMATION APPARATUS USING THE ION GENERATION APPARATUS, AND ION SOURCE
    22.
    发明授权
    ION GENERATION APPARATUS, THIN FILM FORMATION APPARATUS USING THE ION GENERATION APPARATUS, AND ION SOURCE 失效
    离子发生装置，薄膜​​形成装置使用的离子发生装置和离子源。

    公开(公告)号：EP0283519B1

    公开(公告)日：1994-04-13

    申请号：EP87906208.1

    申请日：1987-09-24

    Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    Inventor： MATSUOKA, Morito ,  ONO, Ken'ichi

    IPC: H01J27/18 ,  H01J37/32

    CPC classification number: H01J37/32623 ,  H01J27/18 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/081

    Abstract: High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping the plasma in a plasma generation chamber by a mirror magnetic field. A target (23) is disposed in the plasma generation chamber (14) and is sputtered by ions in the high density plasma. Thus, large quantities of ions can be generated. The ion generation apparatus of the invention can be applied to a thin film formation apparatus which introduces the ions and neutral particles onto a substrate (21) to form a thin film, and also to an ion source by providing an ion pickup grid in order to form a thin film on the substrate or to etch the thin film. The film can be formed at a high speed even when the voltage to be applied to the target is reduced, by disposing permanent magnets (34A, 34B) for leaking the inner surface magnetic flux of the target at the positions corresponding to the upper and lower ends of the target (23) in the plasma generation chamber (14).

    Device for the ionization of metals having a high melting point, which may be used on ion implanters of the type using ion sources of Freeman or similar type
    28.
    发明公开
    Device for the ionization of metals having a high melting point, which may be used on ion implanters of the type using ion sources of Freeman or similar type 失效
    装置可用于电离的配备或类似弗里曼离子源的离子注入机的高熔点金属。

    公开(公告)号：EP0439220A2

    公开(公告)日：1991-07-31

    申请号：EP91200066.8

    申请日：1991-01-15

    Applicant: CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO

    Inventor： Raspagliesi, Mario ,  Medulla, Candido

    IPC: H01J37/08 ,  H01J27/08 ,  H01J27/22

    CPC classification number: H01J27/22 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/31701

    Abstract: The device comprises a cylindrical casing (1) provided with an internal cavity (2) and with a flange (3) and an arc chamber (15) superimposed over the cylindrical casing (1) and including a filament (20) electrically supplied through supply conductors (8, 7, 6) external to said casing (1) and supported by said flange (3), a repeller plate (21) held at a negative voltage through supply conductors (8, 7, 6) external to said casing (1) and supported by said flange (3) and an inlet (19) for a gas which may be ionized. Inside the arc chamber (15) there is also a support (23) for the metal to be ionized (24) supported and connected electrically to an electrode (13) at a negative voltage by means of a rod (9) passing through the internal cavity (2) of said cylindrical casing (1).

    Abstract translation: 该装置包括一个圆筒形壳体（1）在内部腔体设置有（2）中，用叠加在圆筒形壳体的凸缘（3）和电弧室（15）（1）和包括灯丝（20）通过供给电提供 导体（8,7，6）外部到所述外壳（1）和由所述凸缘（3），通过供电导体在负电压保持的推斥板（21）（8,7，6）（外部到所述壳体支撑 1），通过所述凸缘（3），并在入口（19），用于其中可能被电离的气体支承。 电弧室内部（15）因此存在由杆来支承并且在负电压电极（13）电连接到支撑件（23），用于所述金属被离子化（24）（9）穿过所述内部 空腔（2）所述圆筒形壳体（1）。

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