Abstract:
An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.
Abstract:
La présente invention concerne un procédé de dépôt de diamant nanocristallin mettant en œuvre un équipement de dépôt de diamant en phase vapeur comprenant : - un réacteur sous vide (3) comprenant une chambre de réaction reliée à une source de vide, - une pluralité de sources de plasma, disposées selon une matrice au moins bidimensionnelle dans la chambre de réaction, - un porte-substrat (5) disposé dans le réacteur, ledit procédé étant caractérisé en ce que le dépôt est effectué à une température comprise entre 100 et 500°C.
Abstract:
Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.
Abstract:
The present invention relates to a method and device for processing a gas by forming microwave plasmas of the gas. The gas that is to be processed is set in a two or three co-axial vortex flow inside the device and exposed to a microwave field to form the plasma in the inner co-axial vortex flow, which subsequently is expelled as a plasma afterglow through an outlet of the device. The device is provided with a microwave field choking effect by having a diameter of the exit channel larger than zero but smaller than 1/16 of the wavelength of the standing microwave within the microwave chamber and a length, ∈, of the exit channel that may correspondingly have one of the following ranges: from a factor larger than zero but smaller than (n+1/8), n G {0, 1, 2, 3}, of the wavelength of the standing microwave within the microwave chamber.
Abstract:
A solid state microwave generator is utilized as an excitation source for material/plasma processes. The invention provides very close precise control of the solid state device's power levels to control the ultimate power output and frequency which contol is not readily possible with vacuum tube devices. Utilizing the concepts of the invention the total power generated by the system may be easily varied and, further, the power may be easily monitored and used to control other device parameters such as frequency and the like. Because of the degree of control possible within the overall processs system of the invention any measurable physical property of the process such as temperature, power, color (e.g., optical pyrometer), or the like that can be monitored and converted to a control signal can be utililzed by the present system to carefully control the overall process conditions. These control features are lacking in currently available vacuum tube microwave devices. It is also probable that the overall cost of the solid state based microwave power generators systems will be far less than that of comparable tube type microwave generators.
Abstract:
A solid state microwave generator energized phased antenna (10) array is utilized as the excitation source for material/plasma processes. Each antenna element (10) of the array is driven by a separate solid state microwave power source. Very close and precise control of each solid state generator's phase and amplitude is provided to control the amplitude of the composite power node, and electromagnetic field distribution produced by the array which control is not readily possible with vacuum tube devices and systems such as microwave oven magnetrons. Utilizing the concepts of the invention the total power generated by the system may be easily controlled. The phase of the individual elements may be used to control the location of the power node of the plasma within a reaction chamber (12) and to move said power node within the chamber (12) with no mechanical movement or physical alteration of the processing apparatus. Because of the degree of control possible within the overall processes system of the invention plasma processing methods may be performed which were not previously practical because a high power density plasma can be concentrated at any desired location in the reaction chamber (12) or scanned across a desired region. These control features are lacking in currently available vacuum tube microwave devices. It is also probable that the overall cost of such a solid state based microwave power generators systems will be far less than that of comparable tube type microwave generators especially as fabrication and control technology progresses.
Abstract:
Provided is a portable power supply apparatus for generating microwave plasma, capable of minimizing a power reflected from a plasma generation apparatus and improving power consumption of the plasma generation apparatus by generating the plasma by using a microwave having a specific frequency, monitoring the power reflected from the plasma generation apparatus after the generation of the plasma, detecting a changed impedance matching condition, and correcting the frequency.