公开(公告)号：US08564026B2

公开(公告)日：2013-10-22

申请号：US13248087

申请日：2011-09-29

Applicant: Franz-Peter Kalz

Inventor： Franz-Peter Kalz

IPC: G01N29/02

CPC classification number: B81C1/00801 ,  B23K2103/50 ,  B81C2201/0142 ,  B81C2201/0143

Abstract: In various embodiments, a chip may include a substrate; a coating, the coating covering the substrate at least partially and the coating being designed for being stripped at least partially by means of laser ablation; wherein between the substrate and the coating, a laser detector layer is arranged at least partially, the laser detector layer being designed for generating a detector signal for ending the laser ablation.

Abstract translation: 在各种实施例中，芯片可以包括衬底; 涂层，所述涂层至少部分地覆盖所述基底，并且所述涂层被设计为至少部分地通过激光烧蚀剥离; 其中在所述基底和所述涂层之间，至少部分地布置有激光检测器层，所述激光检测器层被设计为产生用于结束所述激光烧蚀的检测器信号。

公开(公告)号：US20130032570A1

公开(公告)日：2013-02-07

申请号：US13195949

申请日：2011-08-02

Applicant: John E. Rogers

Inventor： John E. Rogers

IPC: H05K3/46 ,  H01H11/00

CPC classification number: B81C1/00714 ,  B81B2201/014 ,  B81B2203/0109 ,  B81B2207/03 ,  B81B2207/99 ,  B81C1/00341 ,  B81C2201/0143 ,  B81C2203/037 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0073

Abstract: A method for manufacturing a micro electro-mechanical system (MEMS) switch system (600, 700) includes etching each of a plurality of base circuit layers (425) and a plurality of passive component substrate layers (412, 418, 42, 426). The method continues with laser milling of a first dielectric film (406) to create a spacer layer (405). A metal cladding (402, 403) formed on a flexible dielectric film layer 404 is etched so as to form a plurality of switch component features. Further laser milling is performed with respect to the flexible dielectric film layer to form at least one switch structure (448, 450). Thereafter, a stack (400) is assembled which is comprised of the spacer layer disposed between the flexible dielectric film layer and the plurality of base circuit layers. Additional layers can also be included in the stack. When the stack is completed, heat and pressure are applied to join the various layers forming the stack.

Abstract translation: 一种用于制造微机电系统（MEMS）开关系统（600,700）的方法包括蚀刻多个基极电路层（425）和多个无源部件衬底层（412,418,42,426）中的每一个， 。 该方法继续激光研磨第一介电膜（406）以产生间隔层（405）。 形成在柔性电介质膜层404上的金属覆层（402,403）被蚀刻以形成多个开关元件特征。 相对于柔性电介质膜层进行激光研磨以形成至少一个开关结构（448,450）。 此后，组装叠层（400），其由设置在柔性电介质膜层和多个基极电路层之间的间隔层组成。 堆栈中还可以包含附加层。 当堆叠完成时，施加热和压力以连接形成堆叠的各种层。

公开(公告)号：US20120135237A1

公开(公告)日：2012-05-31

申请号：US13266558

申请日：2010-04-28

Applicant: David H. Gracias ,  Jeong-Hyun Cho

Inventor： David H. Gracias ,  Jeong-Hyun Cho

IPC: B32B5/16 ,  H01L21/302 ,  G03F7/20 ,  B29C59/02 ,  B82Y40/00 ,  B82Y99/00

CPC classification number: G03F7/0037 ,  B81C1/00007 ,  B81C2201/0143 ,  Y10T428/2982

Abstract: The self-assembly of polyhedral nanostructures having at least one dimension of about 100 nm to about 900 nm with electron-beam lithographically patterned surfaces is provided. The presently disclosed three-dimensional nanostructures spontaneous assemble from two-dimensional, tethered panels during plasma or wet chemical etching of the underlying silicon substrate. Any desired surface pattern with a width as small as fifteen nanometers can be precisely defined in all three dimensions. The formation of curving, continuous nanostructures using extrinsic stress also is disclosed.

Abstract translation: 提供了具有约100nm至约900nm的至少一个尺寸的电子束光刻图案表面的多面体纳米结构的自组装。 目前公开的三维纳米结构在等离子体或湿法化学蚀刻下面的硅衬底期间从二维的系留板自发组装。 可以在所有三维中精确地定义任何期望的宽度小至十五纳米的表面图案。 公开了使用外在应力的弯曲连续纳米结构的形成。

公开(公告)号：US20110189446A1

公开(公告)日：2011-08-04

申请号：US13003484

申请日：2009-07-03

Applicant: Graham L. W. Cross ,  Warren McKenzie ,  John B. Pethica

Inventor： Graham L. W. Cross ,  Warren McKenzie ,  John B. Pethica

IPC: B32B3/00 ,  C23F1/00 ,  C23F1/08 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y5/00

CPC classification number: G03F7/11 ,  B81C1/00634 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.

Abstract translation: 本发明提供了一种在碳基表面上构图结构的系统和工艺，包括将表面的一部分暴露于离子通量，使得暴露表面的材料特性被修饰以在表面上提供硬掩模效应。 蚀刻表面的未曝光部分的另一步骤形成表面上的结构。 发明人已经发现，通过控制离子暴露，顶表面上的表面结构的改变提供掩模图案，而基本上不从暴露表面移除任何材料。 该掩模允许对表面的未曝光区域的后续离子蚀刻，离开暴露区域相对于未曝光区域升高，从而将图案制造到表面上。 例如，Ga +聚焦离子束将图案暴露在金刚石表面上，其在暴露于等离子体蚀刻之后产生这种图案。 本发明特别适用于直到纳米级尺寸的清晰明确定义的结构的图案化。

公开(公告)号：US20110034031A1

公开(公告)日：2011-02-10

申请号：US12805569

申请日：2010-08-05

Applicant: Katsuhiko Kanamori ,  Masashi Totokawa ,  Hiroshi Tanaka

Inventor： Katsuhiko Kanamori ,  Masashi Totokawa ,  Hiroshi Tanaka

IPC: H01L21/302

CPC classification number: B81C1/005 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81C1/00484 ,  B81C2201/0143 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/32137

Abstract: A manufacturing method of a semiconductor device includes: irradiating a laser beam on a single crystal silicon substrate, and scanning the laser beam on the substrate so that a portion of the substrate is poly crystallized, wherein at least a part of a poly crystallized portion of the substrate is exposed on a surface of the substrate; and etching the poly crystallized portion of the substrate with an etchant. In this case, a process time is improved.

Abstract translation: 半导体器件的制造方法包括：将激光束照射在单晶硅衬底上，并且将衬底上的激光束扫描以使得衬底的一部分多晶化，其中至少部分多晶结晶部分 将衬底暴露在衬底的表面上; 并用蚀刻剂蚀刻基片的多晶化部分。 在这种情况下，处理时间得到改善。

公开(公告)号：US20100187667A1

公开(公告)日：2010-07-29

申请号：US12361439

申请日：2009-01-28

Applicant: Paul A. Hoisington ,  Marc A. Torrey

Inventor： Paul A. Hoisington ,  Marc A. Torrey

IPC: H01L23/02 ,  H01L21/00

CPC classification number: B81C1/00904 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0143 ,  B81C2201/019

Abstract: A MEMS device is described that has a body with a component bonded to the body. The body has a main surface and a side surface adjacent to the main surface and smaller than the main surface. The body is formed of a material and the side surface is formed of the material and the body is in a crystalline structure different from the side surface. The body includes an outlet in the side surface and the component includes an aperture in fluid connection with the outlet.

Abstract translation: 描述了具有结合到身体的部件的主体的MEMS装置。 主体具有与主表面相邻并且小于主表面的主表面和侧表面。 主体由材料形成，侧表面由材料形成，并且主体是与侧面不同的晶体结构。 主体包括侧表面中的出口，并且部件包括与出口流体连接的孔。

公开(公告)号：US20090184088A1

公开(公告)日：2009-07-23

申请号：US12017944

申请日：2008-01-22

Applicant: Robert J. Carlson

Inventor： Robert J. Carlson

IPC: B29C33/56 ,  B29C41/00

CPC classification number: B29C33/3842 ,  B29C41/00 ,  B29C59/14 ,  B29C59/16 ,  B29K2909/00 ,  B29K2995/0037 ,  B81B7/00 ,  B81B2201/05 ,  B81B2201/058 ,  B81B2203/0127 ,  B81C99/009 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/034 ,  C23F1/02 ,  H01L21/30604 ,  Y10T428/24496

Abstract: The invention is directed to a patterned aerogel-based layer that serves as a mold for at least part of a microelectromechanical feature. The density of an aerogel is less than that of typical materials used in MEMS fabrication, such as poly-silicon, silicon oxide, single-crystal silicon, metals, metal alloys, and the like. Therefore, one may form structural features in an aerogel-based layer at rates significantly higher than the rates at which structural features can be formed in denser materials. The invention further includes a method of patterning an aerogel-based layer to produce such an aerogel-based mold. The invention further includes a method of fabricating a microelectromechanical feature using an aerogel-based mold. This method includes depositing a dense material layer directly onto the outline of at least part of a microelectromechanical feature that has been formed in the aerogel-based layer.

Abstract translation: 本发明涉及用作至少部分微机电特征的模具的图案化气凝胶基层。 气凝胶的密度小于MEMS制造中使用的典型材料的密度，例如多晶硅，氧化硅，单晶硅，金属，金属合金等。 因此，可以以明显高于在较致密的材料中形成结构特征的速率的速率在气凝胶层中形成结构特征。 本发明还包括一种图案化气凝胶层以产生这种基于气凝胶的模具的方法。 本发明还包括使用基于气凝胶的模具制造微机电特征的方法。 该方法包括将致密材料层直接沉积在已经形成在气凝胶层中的微机电特征的至少一部分的轮廓上。

公开(公告)号：US07557044B2

公开(公告)日：2009-07-07

申请号：US11263476

申请日：2005-10-31

Applicant: Yong Ju Yun ,  Chil Seong Ah ,  Dong Han Ha ,  Hyung Ju Park ,  Wan Soo Yun ,  Kwang Cheol Lee ,  Gwang Seo Park

Inventor： Yong Ju Yun ,  Chil Seong Ah ,  Dong Han Ha ,  Hyung Ju Park ,  Wan Soo Yun ,  Kwang Cheol Lee ,  Gwang Seo Park

IPC: H01L21/302

CPC classification number: B81C99/0095 ,  B81B2201/035 ,  B81C2201/0143 ,  Y10S977/883 ,  Y10S977/888

Abstract: Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components. The present invention makes it possible to fabricate the high-quality nano-components in a more simple and easier manner at a lower cost, as compared to other conventional methods. Further, the present invention provides a method of implementing nanomachines through combination of such nano-components and biomolecules, etc.

Abstract translation: 本文公开了使用纳米板制造纳米组分的方法，包括以下步骤：使用光刻和电子束光刻在衬底上印刷栅格; 将分散有纳米板的水溶液喷射到栅格部分上以将纳米板定位在基底上; 在衬底和位于衬底上的纳米板上沉积预定厚度的保护膜; 通过使用聚焦离子束（FIB）或电子束光刻法离子蚀刻沉积有保护膜的纳米板; 并且在纳米板的离子蚀刻之后使用保护膜去除剂去除残留在基板上的保护膜，以及通过使用纳米探针传输这种纳米成分并与其他纳米成分组装来制造纳米机械或纳米结构的方法。 与其他常规方法相比，本发明可以以更简单和更容易的方式以更低的成本制造高质量的纳米组分。 此外，本发明提供了通过这些纳米组分和生物分子等的组合来实现纳米机器的方法。

公开(公告)号：US20080314871A1

公开(公告)日：2008-12-25

申请号：US11766680

申请日：2007-06-21

Applicant: Milos Toth ,  Noel Smith

Inventor： Milos Toth ,  Noel Smith

IPC: H01L21/3065

CPC classification number: B05C21/005 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01J2237/31749

Abstract: A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

Abstract translation: 一种用于制造微结构的方法，其中使用诸如光束引发的前体分解的光束过程，以精确图案沉积掩模，然后选择性等离子体束，包括以下步骤：首先产生保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且其次使用选择性等离子体束蚀刻工艺来蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对地选择的等离子体束工艺进行。

公开(公告)号：US20080105663A1

公开(公告)日：2008-05-08

申请号：US11927764

申请日：2007-10-30

Applicant: Alan Hunt ,  Ernest Hasselbrink ,  Edgar Meyhofer ,  Kevin Ke

Inventor： Alan Hunt ,  Ernest Hasselbrink ,  Edgar Meyhofer ,  Kevin Ke

IPC: B23K26/36 ,  B23K26/14

CPC classification number: B23K26/06 ,  B23K26/0624 ,  B23K26/0665 ,  B23K26/073 ,  B23K26/1224 ,  B23K26/142 ,  B23K26/146 ,  B23K26/36 ,  B23K26/361 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2101/40 ,  B23K2103/30 ,  B23K2103/50 ,  B81C1/00492 ,  B81C2201/0143 ,  B82Y30/00 ,  B82Y40/00 ,  C03C23/0025 ,  Y10T428/24273 ,  Y10T428/24562 ,  Y10T428/24744

Abstract: The invention provides a versatile technique for machining of nanometer-scale features using tightly-focused ultrashort laser pulses. By the invention, the size of features can be reduced far below the wavelength of light, thus enabling nanomachining of a wide range of materials. The features may be extremely small, of nanometer size, and are highly reproducible.

Abstract translation: 本发明提供了一种用于使用紧密聚焦的超短激光脉冲来加工纳米尺度特征的通用技术。 通过本发明，特征的尺寸可以降低到远低于光的波长，从而使得能够对宽范围的材料进行纳米加工。 特征可能非常小，纳米尺寸，并且具有高度可重复性。