Abstract:
A cold-cathode electron source of both high frequency and high output, a microwave tube using the same, and its manufacturing method are disclosed. An emitter (24) of the cold-cathode electron source has a sharp point so that the aspect ratio R may be 4 or more. As a result, the capacitance between the emitter (24) and a gate electrode (16) is small correspondingly to the distance from the gate electrode (16). Therefore, the cold-cathode electrons can behave in response to a high frequency. The material of the cathode of this cold-cathode electron source is diamond having a high melting point and a high thermal conductivity, not a conventional material such as tungsten or silicon. Even if the density of the current flowing through the emitter (24) is high, the emitter (24) hardly melts, and consequently the cold-cathode electron source can be adapted to high output.
Abstract:
An amorphous diamond material that is capable of emitting electrons in a vacuum upon the input of a sufficient amount of energy is disclosed. The material may utilize both compositional and geometrical aspects in order to maximize electron output and minimize required energy input. In one aspect, the amorphous diamond material may include at least about 90% carbon atoms with at least about 30% of such carbon atoms bonded in distorted tetrahedral coordination. Further, the material may be configured with an emission surface having an asperity height of from about 10 to about 10,000 nanometers. A variety of energy types may be used separately or in combination to facilitate electron flow, such as thermal energy, light energy, and induced electric field energy. The amorphous diamond material may be incorporated into a variety of vacuum-type devices, such as switches, laser diodes, electrical generators, and cooling devices.
Abstract:
An electrode having a surface of an electrically conducting ultrananocrystalline diamond having not less than 10 19 atoms/cm 3 nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 (Ω . cm) -1 is disclosed as is a method of remediating toxic materials with the electrode. An electron emission device incorporating an electrically conducting ultrananocrystalline diamond having not less that 10 19 atoms/cm 3 nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 (Ω . cm) -1 is disclosed.
Abstract translation:具有不小于10 19原子/ cm 3氮的导电超微晶金刚石的表面的电极,在环境温度下的电导率不小于约0.1(OMEGA·cm)-1, 公开了用电极补救有毒物质的方法。 包含具有不小于10 19个原子/ cm 3氮的导电超微晶金刚石的电子发射装置,其环境温度不小于约0.1(OMEGA·cm)-1的电导率为 披露。
Abstract:
The present invention may be used in the production of highly efficient films for electron field emitters. The cold-emission cathode of the present invention comprises a substrate having a carbon film with an irregular structure applied thereon. This structure comprises carbon micro- and nano-ridges and/or micro- and nano-threads which are perpendicular to the surface of the substrate, which have a characteristic scale of between 0.01 and 1 micron as well as a distribution density of between 0.1 and 100 mu m, and which are coated with a diamond nano-film whose thickness represents a fraction of a micron. The method for producing the cathode involves sequentially depositing two carbon films. A carbon film with nano-barbs is first deposited on a substrate arranged on an anode by igniting a direct-current discharge at a density of between 0.15 and 0.5 A. This deposition is carried out in a mixture containing hydrogen and a carbon-containing additive, under a global pressure of between 50 and 300 torrs, using vapours of ethylic alcohol at a 5 to 15 % concentration or vapours of methane at a 6 to 30 % concentration, and at a temperature on the substrate of between 600 and 1100 DEG C. A diamond nano-film is then deposited on the graphite film thus grown.
Abstract:
The present invention pertains to the field of vacuum electronics and more precisely relates to a field emitter intended for use as an electron source (cathode) in vacuum electronic devices for various purposes such as cathodic luminescent light sources, light-emitting indicators and flat displays for the optical representation of information. The field emitter of the present invention consists in a carbon film whose main portion is made of graphite clusters having their basic crystallographic planes preferably oriented so as to be perpendicular to the plane of the substrate on which said film is located. This emitter exhibits improved emission parameters that enable its use for the above-mentioned purposes. The method for producing this emitter comprises previously applying diamond crystallites on an electro-conductive substrate and depositing graphite clusters on said crystallites in order to obtain a monolithic film. The parameters of the deposition process are selected so that the crystallographic basic planes in the graphite clusters are preferably oriented in a direction perpendicular to the surface of the substrate. These parameters are also selected in order to provide for a modification in the electronic configuration of the carbon atoms in the thin boundary layer so as to reduce the work function of the electrons.
Abstract:
A cathode assembly includes a substrate, a plurality of electrically conducting strips deposited on the substrate, and a continuous layer of diamond material deposited over the plurality of electrically conducting strips and portions of the substrate exposed between the plurality of electrically conducting strips.
Abstract:
Display panels comprise at least one suspended fibrous cathode containing an electron field emitter. The fibrous cathode is supported by a substrate (10) containing two sets of parallel rows of crests and valleys. The first set of parallel crests (11) and valleys (12) provide the valleys along which the fibrous cathode is aligned. The second set of parallel crests (13) and valleys (14) is perpendicular to the first set. The valleys (14) provide the means for suspending the fibrous cathode.
Abstract:
A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness "s" and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width "r" along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point "O". Each filament includes a filament tip terminating at a point "A". A majority of all filament tips of the display have a length "L" between each filament tip at point A and point O along the filament axis where, L
Abstract:
An imaging apparatus (100) for providing an image from a display (106) to an observer (101), comprising: a display (106) generating an optical output, an imaging surface member (109) constructed and arranged for viewing by said observer, and a scanning mirror/lens assembly (102) optically interposed between the display and the imaging surface member, and constructed and arranged to motively repetitively scan the display, generate a scanned image, and transmit the scanned image to the imaging surface member, for viewing of the scanned image. Various field emitter display designs and subassemblies are described, which may be usefully employed in such imaging apparatus.
Abstract:
A plasma enhanced chemical transport (PECT) process for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 mu m/hr, the deposition being enhanced by a hydrogen plasma. The process is performed at 80 to 180 Torr and a current density of about 0.5 to 4.0 amp/cm of substrate. The diamond film is deposited on a substrate located 0.4 to 1.0 cm from a carbon cathode. The invention further comprises undoped and doped diamond films produced by the process, the product having a well-faceted microcrystalline structure with an x-ray diffraction pattern and Raman spectra indicative of a predominantly diamond structure. The invention further comprises doped diamond films which function as n-type and p-type semiconductors. In addition to the well-faceted diamond coating, cauliflower and multiple-twinned faceted diamond film morphologies, as well as films of extremely low surface roughness, can also be formed.