冷極電子源と、これを用いたマイクロ波管及びその製造方法
    321.
    发明申请
    冷極電子源と、これを用いたマイクロ波管及びその製造方法 审中-公开
    冷阴极电子源,使用此微波管及其制造方法

    公开(公告)号:WO2004088703A1

    公开(公告)日:2004-10-14

    申请号:PCT/JP2004/004245

    申请日:2004-03-26

    Abstract: A cold-cathode electron source of both high frequency and high output, a microwave tube using the same, and its manufacturing method are disclosed. An emitter (24) of the cold-cathode electron source has a sharp point so that the aspect ratio R may be 4 or more. As a result, the capacitance between the emitter (24) and a gate electrode (16) is small correspondingly to the distance from the gate electrode (16). Therefore, the cold-cathode electrons can behave in response to a high frequency. The material of the cathode of this cold-cathode electron source is diamond having a high melting point and a high thermal conductivity, not a conventional material such as tungsten or silicon. Even if the density of the current flowing through the emitter (24) is high, the emitter (24) hardly melts, and consequently the cold-cathode electron source can be adapted to high output.

    Abstract translation: 公开了高频和高输出的冷阴极电子源,使用其的微波管及其制造方法。 冷阴极电子源的发射极(24)具有尖锐点,使得纵横比R可以为4以上。 结果,发射极(24)和栅电极(16)之间的电容对应于与栅电极(16)的距离较小。 因此,冷阴极电子可以响应于高频率而起作用。 该冷阴极电子源的阴极的材料是具有高熔点和高导热性的金刚石,而不是常规的诸如钨或硅的材料。 即使流过发射极(24)的电流的密度高,发射极(24)几乎不熔化,因此冷阴极电子源可适应于高输出。

    AMORPHOUS DIAMOND MATERIALS AND ASSOCIATED METHODS FOR THE USE AND MANUFACTURE THEREOF
    322.
    发明申请
    AMORPHOUS DIAMOND MATERIALS AND ASSOCIATED METHODS FOR THE USE AND MANUFACTURE THEREOF 审中-公开
    非晶金刚石材料及其相关方法的使用及其制造

    公开(公告)号:WO2003077270A2

    公开(公告)日:2003-09-18

    申请号:PCT/US2003/006938

    申请日:2003-03-06

    Inventor: SUNG, Chien-Min

    IPC: H01J

    Abstract: An amorphous diamond material that is capable of emitting electrons in a vacuum upon the input of a sufficient amount of energy is disclosed. The material may utilize both compositional and geometrical aspects in order to maximize electron output and minimize required energy input. In one aspect, the amorphous diamond material may include at least about 90% carbon atoms with at least about 30% of such carbon atoms bonded in distorted tetrahedral coordination. Further, the material may be configured with an emission surface having an asperity height of from about 10 to about 10,000 nanometers. A variety of energy types may be used separately or in combination to facilitate electron flow, such as thermal energy, light energy, and induced electric field energy. The amorphous diamond material may be incorporated into a variety of vacuum-type devices, such as switches, laser diodes, electrical generators, and cooling devices.

    Abstract translation: 公开了一种非晶金刚石材料,其能够在输入足够量的能量时在真空中发射电子。 该材料可以利用组合和几何方面,以最大化电子输出并最小化所需的能量输入。 一方面,无定形金刚石材料可以包括至少约90%的碳原子,其中至少约30%的这些碳原子以变形的四面体配位结合。 此外,材料可以配置有具有约10至约10,000纳米的粗糙度高度的发射表面。 各种能量类型可以单独使用或组合使用以促进电子流动,例如热能,光能和感应电场能量。 非晶金刚石材料可以结合到各种真空型装置中,例如开关,激光二极管,发电机和冷却装置。

    FIELD EMITTER AND METHOD FOR PRODUCING THE SAME
    325.
    发明申请
    FIELD EMITTER AND METHOD FOR PRODUCING THE SAME 审中-公开
    现场发射器及其制造方法

    公开(公告)号:WO99044215A1

    公开(公告)日:1999-09-02

    申请号:PCT/RU1998/000056

    申请日:1998-02-27

    CPC classification number: H01J1/304 H01J2201/30403 H01J2201/30457

    Abstract: The present invention pertains to the field of vacuum electronics and more precisely relates to a field emitter intended for use as an electron source (cathode) in vacuum electronic devices for various purposes such as cathodic luminescent light sources, light-emitting indicators and flat displays for the optical representation of information. The field emitter of the present invention consists in a carbon film whose main portion is made of graphite clusters having their basic crystallographic planes preferably oriented so as to be perpendicular to the plane of the substrate on which said film is located. This emitter exhibits improved emission parameters that enable its use for the above-mentioned purposes. The method for producing this emitter comprises previously applying diamond crystallites on an electro-conductive substrate and depositing graphite clusters on said crystallites in order to obtain a monolithic film. The parameters of the deposition process are selected so that the crystallographic basic planes in the graphite clusters are preferably oriented in a direction perpendicular to the surface of the substrate. These parameters are also selected in order to provide for a modification in the electronic configuration of the carbon atoms in the thin boundary layer so as to reduce the work function of the electrons.

    Abstract translation: 本发明涉及真空电子领域,更确切地说,涉及一种用于各种用途的真空电子设备中的电子源(阴极)的场致发射体,例如阴极发光光源,发光指示器和平板显示器 信息的光学表示。 本发明的场致发射体由碳膜构成,其主要部分由具有基本结晶面的石墨簇制成,其优选取向为垂直于所述薄膜所在基板的平面。 该发射器表现出改善的发射参数,使其能够用于上述目的。 制造该发射体的方法包括事先在金属导电基底上施加金刚石微晶并将石墨簇沉积在所述微晶上以获得单片薄膜。 选择沉积工艺的参数,使得石墨簇中的晶体基本平面优选地在垂直于衬底表面的方向上取向。 还选择这些参数以便提供薄边界层中的碳原子的电子构型的修改,以便降低电子的功函数。

    GATED FILAMENT STRUCTURES FOR A FIELD EMISSION DISPLAY
    328.
    发明申请
    GATED FILAMENT STRUCTURES FOR A FIELD EMISSION DISPLAY 审中-公开
    用于场发射显示的栅极结构

    公开(公告)号:WO1996024152A1

    公开(公告)日:1996-08-08

    申请号:PCT/US1996001461

    申请日:1996-01-31

    CPC classification number: H01J1/3042 H01J9/025 H01J2201/30457 H01J2201/319

    Abstract: A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness "s" and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width "r" along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point "O". Each filament includes a filament tip terminating at a point "A". A majority of all filament tips of the display have a length "L" between each filament tip at point A and point O along the filament axis where, L

    Abstract translation: 用于场致发射显示器的门控灯丝结构包括多个灯丝。 包括衬底,邻近衬底定位的绝缘层以及与绝缘层相邻的金属栅极层位置。 金属栅极层具有多个栅极,金属栅极层具有平均厚度“s”以及基本上平行于底部金属栅极层平面的顶部金属栅极层平坦表面。 金属栅极层包括延伸通过栅极的多个孔。 每个孔具有沿着孔的底部平坦表面的平均宽度“r”。 每个孔限定平行于并等距离顶部金属栅极层平面和底部金属栅极层平面的中点平面。 多个细丝单独地定位在孔中。 每根灯丝都有一个灯丝轴线。 灯丝轴和中点平面的交点定义点“O”。 每个细丝包括终止于“A”点的细丝末端。 显示器的所有灯丝尖端的大部分在点A处的每个灯丝尖端和灯丝轴线处的点O之间具有长度“L”,其中L i =(s + r)/ 2。

    PROCESS TO PRODUCE DIAMOND FILMS
    330.
    发明申请
    PROCESS TO PRODUCE DIAMOND FILMS 审中-公开
    生产金刚石薄膜的工艺

    公开(公告)号:WO1995027806A1

    公开(公告)日:1995-10-19

    申请号:PCT/US1995004197

    申请日:1995-04-04

    Abstract: A plasma enhanced chemical transport (PECT) process for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 mu m/hr, the deposition being enhanced by a hydrogen plasma. The process is performed at 80 to 180 Torr and a current density of about 0.5 to 4.0 amp/cm of substrate. The diamond film is deposited on a substrate located 0.4 to 1.0 cm from a carbon cathode. The invention further comprises undoped and doped diamond films produced by the process, the product having a well-faceted microcrystalline structure with an x-ray diffraction pattern and Raman spectra indicative of a predominantly diamond structure. The invention further comprises doped diamond films which function as n-type and p-type semiconductors. In addition to the well-faceted diamond coating, cauliflower and multiple-twinned faceted diamond film morphologies, as well as films of extremely low surface roughness, can also be formed.

    Abstract translation: 用于在相对较低的沉积温度和约1m / hr的速率下形成微晶金刚石膜的等离子体增强化学传输(PECT)工艺,沉积由氢等离子体增强。 该工艺在80至180托下进行,电流密度约为0.5至4.0安培/厘米2。 将金刚石膜沉积在距离碳阴极0.4-1.0cm的衬底上。 本发明还包括通过该方法生产的未掺杂和掺杂的金刚石膜,该产品具有良好的具有X射线衍射图的微晶结构和表示主要为金刚石结构的拉曼光谱。 本发明还包括用作n型和p型半导体的掺杂金刚石膜。 除了良好的金刚石涂层之外,还可以形成花椰菜和多晶双面金刚石膜形态,以及极低表面粗糙度的薄膜。

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