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    실리콘 단결정 인상용 석영 그라스 도가니
    333.
    发明公开
    실리콘 단결정 인상용 석영 그라스 도가니 有权
    QUARTZ玻璃可溶于硅胶单晶

    公开(公告)号：KR1020050087880A

    公开(公告)日：2005-08-31

    申请号：KR1020057012775

    申请日：2004-05-21

    Applicant: 신에쯔 세끼에이 가부시키가이샤

    Inventor： 오하마야수오 ,  토가와타카유키 ,  미즈노시게오

    IPC: C30B15/10

    CPC classification number: C03B19/095 ,  C03B2201/03 ,  C30B15/10 ,  Y02P40/57 ,  Y10S65/08 ,  Y10S117/90 ,  Y10T117/10

    Abstract: A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.

    Abstract translation: 一种用于拉起单晶硅的石英玻璃坩埚，其中至少在其弯曲部分中具有由合成石英玻璃构成的具有低Al浓度的透明内层的三层结构， 透明或不透明的中间层由天然石英玻璃或天然和合成石英玻璃的混合物组成，具有高Al浓度，不透明的外层由天然石英玻璃组成，Al浓度高于 中间层。 石英玻璃坩埚在透明内层的变形中减少，并且抑制与单晶上拉相关联的石英玻璃坩埚的溶解量的变化，并且实现均匀的氧浓度 在单晶的纵向上。

    실리카 글라스 성형체의 제조 방법
    334.
    发明公开
    실리카 글라스 성형체의 제조 방법 失效
    制造具有正确的最终尺寸和设计的二氧化硅玻璃体的方法

    公开(公告)号：KR1020040093631A

    公开(公告)日：2004-11-06

    申请号：KR1020040030260

    申请日：2004-04-29

    Applicant: 와커 헤미 아게

    Inventor： 쉬베르트페게르프리츠 ,  스질라트홀게르 ,  타벨리온얀 ,  클라센롤프-클라우스

    IPC: C03B19/12 ,  B82Y40/00

    CPC classification number: C25D1/14 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/03 ,  C03B2201/04 ,  C30B35/002

    Abstract: PURPOSE: Provided is a method for manufacturing a silica glass shaped body which has open pores and correct final dimension and design, useful for filter materials, heat insulation materials, heat shields, catalyst supports and preforms. CONSTITUTION: The method for manufacturing a homogeneous silica glass shaped body having correct final dimension and design comprises a step for electrodepositing amorphous SiO2 particles formed of amorphous SiO2 particles having a relatively large size and SiO2 particles having a relatively small size from a water soluble dispersion(5) thereof onto a non-conductive membrane(3) by electrophoresis. The membrane(3) has a shape and geometry corresponding to those of SiO2 shaped body to be produced. Additionally, the membrane(3) has an average pore size greater than the average particle size of the above amorphous SiO2 particles having a relatively small size.

    Abstract translation: 目的：提供一种制造石英玻璃成形体的方法，其具有开孔和正确的最终尺寸和设计，可用于过滤材料，隔热材料，隔热层，催化剂载体和预制件。 构成：具有正确的最终尺寸和设计的均匀二氧化硅玻璃成形体的制造方法包括从水溶性分散体中电沉积由具有较大尺寸的无定形SiO 2颗粒和SiO 2颗粒形成的非晶SiO 2颗粒的步骤， 5）通过电泳到非导电膜（3）上。 膜（3）具有与要生产的SiO 2形状体的形状和几何形状。 此外，膜（3）的平均孔径大于上述具有较小尺寸的无定形SiO 2颗粒的平均粒度。

    전해정제에 의한 고순도 석영 도가니와 그의 제조 방법 및인상 방법
    335.
    发明公开
    전해정제에 의한 고순도 석영 도가니와 그의 제조 방법 및인상 방법 有权
    通过电解精炼获得的具有高纯度的QUARTZ玻璃纤维，其制造方法及其拉伸方法

    公开(公告)号：KR1020040086174A

    公开(公告)日：2004-10-08

    申请号：KR1020040015481

    申请日：2004-03-08

    Applicant: 쟈판 스파 쿼츠 가부시키가이샤

    Inventor： 기시히로시 ,  후쿠이마사노리 ,  쓰지요시유키

    IPC: C03B20/00

    CPC classification number: C03C3/06 ,  C03B19/095 ,  C03B2201/03 ,  C30B15/10 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1032 ,  Y10T117/1052

    Abstract: PURPOSE: Provided is a quartz glass crucible having high purity at the part of its inner circumference, suitable to be used in a method for pulling monocrystalline silicon for semiconductors from molten silicon. CONSTITUTION: The quartz glass crucible is manufactured by heating powder of quartz raw material present in the inside of a hollow rotational mold(10) with electric arc, wherein an electric voltage is applied between the mold(10) and an arc electrode(13) to cause metal impurities contained in the molten quartz glass disposed at the inner circumference of the crucible to be moved toward the outer circumference so that the purity of the molten quartz glass is increased. The arc-melting of the quartz material is performed until the thickness of the resultant glass layer becomes a thickness of 5 mm or more and that of the non-molten quartz glass layer becomes 2 mm or less. During the arc-melting, an earth arc electrode is maintained at a potential of +/- 500V. A voltage of -1,000 to -20,000 V is applied to the mold electrically insulated with the earth.

    Abstract translation: 目的：提供一种在其内周部分具有高纯度的石英玻璃坩埚，适用于从熔融硅中提取半导体的单晶硅的方法。 构成：石英玻璃坩埚是通过用电弧加热存在于中空旋转模具（10）内部的石英原料的粉末制造的，其中在模具（10）和电弧电极（13）之间施加电压， 导致设置在坩埚内周的熔融石英玻璃中所含的金属杂质向外周移动，使得熔融石英玻璃的纯度提高。 进行石英材料的电弧熔融，直到得到的玻璃层的厚度为5mm以上，非熔融石英玻璃的厚度为2mm以下。 在电弧熔化期间，接地电弧电极保持在+/- 500V的电位。 对地电绝缘的模具施加-1000〜-20,000V的电压。

    석영 유리 바디 및 석영 유리재 홀더 부재의 제조 방법
    336.
    发明公开
    석영 유리 바디 및 석영 유리재 홀더 부재의 제조 방법 无效
    石墨玻璃体的生产方法及其控制方法

    公开(公告)号：KR1020010092796A

    公开(公告)日：2001-10-26

    申请号：KR1020017009246

    申请日：2000-11-14

    Applicant: 헤라에우스 테네보 게엠베하 ,  신에쯔 세끼에이 가부시키가이샤

    Inventor： 디트머클라우스 ,  파비안하인츠 ,  엘제써주잔네

    IPC: C03B19/14

    CPC classification number: C03B19/1484 ,  C03B2201/03

    Abstract: 석영유리바디를제조하기위한공지된방법에서, 블랭크의단부들중 한단부의영역내에제공되는석영유리재의홀더부재를갖는본래실린더형인다공성블랭크를형성함으로써, 종축에대해회전하는실린더형심봉의실린더재킷표면상에, SiO파티클들을증착한다. 이러한기초위에, 석영유리바디로부터제조된제품들의특성의재현성을향상시키기위해, 본발명에의해서, 준안정한 OH 농도가 30 중량ppm 이하인홀더부재가사용되고, 홀더부재에대해사전열처리를진행하는것이제안되었다. 다공성석영유리의블랭크를지지하기에적합한홀더부재부재부재한 OH 농도가 30 중량ppm 이하인석영유리로구성된다.

    Abstract translation: 在用于生产石英玻璃体的现有技术方法中，SiO 2颗粒沉积在圆柱形心轴（4）的圆柱形外表面上，圆柱形心轴绕其纵向轴线旋转，同时形成基本上圆柱形的多孔坯料（1），由此 在所述坯料（1）的一个端部的区域中设置由石英玻璃制成的保持元件（12）。 本发明的目的是基于现有方法改进由石英玻璃体制成的产品的性质的再现性。 为此，本发明提供使用具有小于30重量ppm的亚稳OH含量的保持元件（2），并且对保持元件（2）进行热预处理。 用于保持由石英玻璃制成的坯料的合适的保持元件（2）的特征在于其由具有低于30重量ppm的亚稳OH含量的石英玻璃构成。

    A SILICA CONTAINER FOR PULLING UP MONOCRYSTALLINE SILICON AND METHOD FOR MANUFACTURING SAME
    337.
    发明公开
    A SILICA CONTAINER FOR PULLING UP MONOCRYSTALLINE SILICON AND METHOD FOR MANUFACTURING SAME 审中-公开
    一种用于上拉单晶硅的二氧化硅容器及其制造方法

    公开(公告)号：EP2703526A1

    公开(公告)日：2014-03-05

    申请号：EP13763892.0

    申请日：2013-01-22

    Applicant: Shin-Etsu Quartz Products Co., Ltd.

    Inventor： YAMAGATA, Shigeru

    IPC: C30B29/06 ,  C03B20/00 ,  C30B15/10

    CPC classification number: C30B15/10 ,  C03B19/095 ,  C03B2201/03 ,  C30B29/06 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

    Abstract: The present invention is directed to a silica container for pulling single crystal silicon, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the outside of the silica container is made of opaque silica glass containing gaseous bubbles, the inside of the silica container is made of transparent silica glass containing substantially no gaseous bubble, and, on the inner surface of the bottom portion, a silica glass layer containing the OH group in a concentration of more than 300 ppm by mass but 3000 ppm by mass or less, the silica glass layer having a thickness of 20 µm or more but 1000 µm or less, is formed. As a result, a low-cost silica container for pulling single crystal silicon, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided.

    Abstract translation: 本发明涉及一种用于拉制单晶硅的二氧化硅容器，该二氧化硅容器包括直体部分，弯曲部分和底部，其中二氧化硅容器的外部由含有气泡的不透明石英玻璃制成， 二氧化硅容器的内部由实质上不含气泡的透明二氧化硅玻璃构成，在底部的内表面上形成含有浓度超过300质量ppm且为3000ppm以下的OH基的二氧化硅玻璃层 以下，形成厚度为20μm以上且1000μm以下的二氧化硅玻璃层。 结果，提供了一种低成本的用于拉制单晶硅的二氧化硅容器，该二氧化硅容器能够减少被称为单晶硅中的空隙和针孔的空穴缺陷。

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