Solderless Mounting for Semiconductor Lasers
    31.
    发明申请
    Solderless Mounting for Semiconductor Lasers 有权
    半导体激光器的无焊接安装

    公开(公告)号:US20160111393A1

    公开(公告)日:2016-04-21

    申请号:US14885931

    申请日:2015-10-16

    Abstract: A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

    Abstract translation: 可以将半导体激光器芯片的第一接触表面形成为第一目标表面粗糙度,并且可以将载体安装的第二接触表面形成为第二目标表面粗糙度。 包含第一金属的第一粘合制备层可以任选地施加到所形成的第一接触表面,并且包括第二金属的第二接合制备层可任选地施加到形成的第二接触表面。 第一接触表面可以与第二接触表面接触,并且无焊接固定工艺可以将半导体激光器芯片固定到载体安装。 还描述了相关系统,方法,制品等。

    Spectrometer With Active Beam Steering
    32.
    发明申请
    Spectrometer With Active Beam Steering 有权
    光束仪主动光束转向

    公开(公告)号:US20160054177A1

    公开(公告)日:2016-02-25

    申请号:US14466819

    申请日:2014-08-22

    Abstract: A spectrometer includes a light source that emits a beam into a sample volume comprising an absorbing medium. Thereafter, at least one detector detects at least a portion of the beam emitted by the light source. It is later determined, based on the detected at least a portion of the beam and by a controller, that a position and/or an angle of the beam should be changed. The beam emitted by the light source is then actively steered by an actuation element under control of the controller. In addition, a concentration of the absorbing media can be quantified or otherwise calculated (using the controller or optionally a different processor that can be local or remote). The actuation element(s) can be coupled to one or more of the light source, a detector or detectors, and a reflector or reflectors intermediate the light source and the detector(s).

    Abstract translation: 光谱仪包括将光束发射到包括吸收介质的样品体积中的光源。 此后,至少一个检测器检测由光源发射的光束的至少一部分。 随后基于检测到的梁的至少一部分和由控制器确定梁的位置和/或角度应被改变。 然后在控制器的控制下由光源发射的光束被致动元件主动地导向。 此外,可以量化或以其他方式计算吸收介质的浓度(使用控制器或可选择地可以是本地或远程的不同处理器)。 致动元件可以耦合到光源,检测器或检测器中的一个或多个,以及在光源和检测器之间的反射器或反射器。

    SEMICONDUCTOR LASER MOUNTING FOR IMPROVED FREQUENCY STABILITY

    公开(公告)号:CA2829946C

    公开(公告)日:2017-04-04

    申请号:CA2829946

    申请日:2012-03-14

    Abstract: A first contact surface ( 310 ) of a semiconductor laser chip ( 302 ) can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface ( 310 ). A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip ( 302 ) can be soldered to a carrier mounting along the first contact surface ( 310 ) using a solder composition ( 306 ) by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

    Spectrometer with active beam steering

    公开(公告)号:AU2015303969A1

    公开(公告)日:2017-02-16

    申请号:AU2015303969

    申请日:2015-07-09

    Abstract: A spectrometer includes a light source that emits a beam into a sample volume comprising an absorbing medium. Thereafter, at least one detector detects at least a portion of the beam emitted by the light source. It is later determined, based on the detected at least a portion of the beam and by a controller, that a position and/or an angle of the beam should be changed. The beam emitted by the light source is then actively steered by an actuation element under control of the controller. In addition, a concentration of the absorbing media can be quantified or otherwise calculated (using the controller or optionally a different processor that can be local or remote). The actuation element(s) can be coupled to one or more of the light source, a detector or detectors, and a reflector or reflectors intermediate the light source and the detector(s).

    SEMICONDUCTOR LASER MOUNTING WITH INTACT DIFFUSION BARRIER LAYER

    公开(公告)号:CA2844789C

    公开(公告)日:2016-09-20

    申请号:CA2844789

    申请日:2012-08-14

    Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride

    Solderless mounting for semiconductor lasers

    公开(公告)号:AU2013334609A1

    公开(公告)日:2015-04-16

    申请号:AU2013334609

    申请日:2013-10-23

    Abstract: A first contact surface (310) of a semiconductor laser chip (302) can be formed to a first target surface roughness and a second contact surface (312) of a carrier mounting (304) can be formed to a second target surface roughness. A first bond preparation layer (306) comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer (308) comprising a second metal can optionally be applied to the formed second contact surface. Both preparation layers may be made of gold and diffusion bonding results from a heating of device under pressure. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

    Optical absorbance measurements with self-calibration and extended dynamic range

    公开(公告)号:AU2010259934B2

    公开(公告)日:2014-10-30

    申请号:AU2010259934

    申请日:2010-06-11

    Abstract: Detector data representative of an intensity of light that impinges on a detector after being emitted from a light source and passing through a gas over a path length can be analyzed using a first analysis method to obtain a first calculation of an analyte concentration in the volume of gas and a second analysis method to obtain a second calculation of the analyte concentration. The second calculation can be promoted as the analyte concentration upon determining that the analyte concentration is out of a first target range for the first analysis method.

    Collisional broadening compensation using real or near-real time validation in spectroscopic analyzers

    公开(公告)号:AU2013234971A1

    公开(公告)日:2014-09-11

    申请号:AU2013234971

    申请日:2013-03-21

    Abstract: Validation verification data quantifying an intensity of light reaching a detector of a spectrometer from a light source of the spectrometer after the light passes through a validation gas across a known path length can be collected or received. The validation gas can include an amount of an analyte compound and an undisturbed background composition that is representative of a sample gas background composition of a sample gas to be analyzed using a spectrometer. The sample gas background composition can include one or more background components. The validation verification data can be compared with stored calibration data for the spectrometer to calculate a concentration adjustment factor, and sample measurement data collected with the spectrometer can be modified using this adjustment factor to compensate for collisional broadening of a spectral peak of the analyte compound by the background components. Related methods, articles of manufacture, systems, and the like are described.

    Semiconductor laser mounting with intact diffusion barrier layer

    公开(公告)号:AU2012296657A1

    公开(公告)日:2014-02-27

    申请号:AU2012296657

    申请日:2012-08-14

    Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride

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