Abstract:
PURPOSE: A Field Effect Transistor-type biosensor with exchangeable electrode is provided to detect whether an antigen is existed or not by measuring and monitoring the value of a current flowing between an FET source and a drain. CONSTITUTION: An FET-type biosensor(100) with exchangeable electrode comprises an electrode plate(130) and an electrode plate socket(160). An FET(120) is arranged in a circuit board(110). The circuit board is a semiconductor substrate or a glass substrate. The electrode plate comprises a metal film, and detects a biomaterial. The electrode plate socket is arranged in the circuit board, and attaches and detaches the electrode plate. The electrode plate and the FET are electrically connected.
Abstract:
네트워크 관리 프로토콜을 이용한 센서 네트워크 관리 방법 및 시스템을 개시한다. 본 발명에 의한 네트워크 관리 프로토콜을 이용한 센서 네트워크 관리 방법은, 상기 센서 네트워크의 특성을 고려하여, 상기 센서 네트워크의 계층별 관리 정보를 정의하는 단계; 상기 정의된 관리 정보를 이용하여, 네트워크 관리 프로토콜을 생성하는 단계; 및 상기 생성된 네트워크 관리 프로토콜을 이용하여, 상기 센서 네트워크를 관리하는 단계를 포함한다. 센서 네트워크, 네트워크 관리 프로토콜, 지그비, 센서 노드
Abstract:
A method and a system for managing a sensor network using a network management protocol are provided to improve management efficiency by generating a network management protocol using management information and defining management information at each layer in consideration with the characteristic of the sensor network. The management information of a sensor network at each layer is defined in consideration with the characteristic of the sensor network(S110). A network management protocol is generated by using the defined management information(S120). A sensor network is managed by using the generated network management protocol(S130).
Abstract:
An organic TFT with high efficiency is provided to relatively increase the width/length ratio of a source/drain electrode formed in a groove or protrusion with a predetermined shape by forming the groove or protrusion in a substrate or an organic or inorganic material deposited on the substrate. A substrate(400) of a predetermined shape is prepared which has at least one unevenness part(402). A gate electrode is formed on the unevenness part of the substrate. A gate insulation layer is formed on the gate electrode, made of an inorganic material with a high dielectric constant. An organic insulation layer(430) of a predetermined shape is patterned on the gate insulation layer. A source electrode(440) and a drain electrode(442) are formed on the organic insulation layer. A magnetic assembly is formed on the gate insulation layer between the source electrode and the drain electrode. An active layer(460) is formed on the magnetic assembly, connected to both ends of the source electrode and the drain electrode. The unevenness part can be composed of a concave groove part and a convex protrusion part that are selectively coupled to each other.