公开(公告)号：KR1020010039769A

公开(公告)日：2001-05-15

申请号：KR1020000043817

申请日：2000-07-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 토시마타카유키 ,  우에노킨야 ,  야마사카미야코 ,  츠츠미히데유키 ,  이이노타다시 ,  카미카와유지

IPC: H01L21/304

CPC classification number: H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

Abstract: PURPOSE: Provided is a substrate treatment method having high treatment capacity, and a processor. CONSTITUTION: This is a method of washing a wafer(W), and here the liquid film(31) of pure water is made on the surface of the wafer(W), while the liquid film of ozone water is created by dissolving ozone gas(20) in the liquid film(31) of pure water, and the resist film(30) made on the surface of the wafer(W) is removed. A washer can execute such a washing method suitably.

Abstract translation: 目的：提供具有高处理能力的基板处理方法和处理器。 构成：这是洗涤晶片（W）的方法，这里在晶片（W）的表面上形成纯水的液膜（31），而臭氧水的液膜是通过溶解臭氧气体 （20）在纯水的液膜（31）中，并且去除在晶片（W）的表面上制成的抗蚀剂膜（30）。 垫圈可以适当地执行这种洗涤方法。