Abstract:
PURPOSE: A sense amplifier including a negative capacitance circuit and apparatuses including the same are provided to improve a data readout speed by accurately sensing and amplifying input data at high operation speed. CONSTITUTION: A negative capacitance circuit(13) is connected between data line pairs. A current bias circuit supplies a bias current to the negative capacitance circuit. A voltage bias circuit(15) supplies a bias voltage to data line pairs. A differential-single-ended amplifier(19) is connected between the data line pairs.
Abstract:
PURPOSE: A webpage crawling method and an apparatus thereof are provided to reduce crawling working time by increasing probability to search for content of a web page having specific information through dynamic control of crawling depth. CONSTITUTION: A web address obtaining unit(210) obtains a web address list which is linked on a route web address list. A webpage evaluating unit(220) obtains content about a web address page by visiting web addresses based on the web address list. A crawling depth controlling unit(230) controls crawling depth according to an evaluation result.
Abstract:
PURPOSE: A data storage device, operating method thereof, and a storage server including the same are provided to increase an overall operation speed of a data storage which has a compression function. CONSTITUTION: A storage media(1100) comprises memory blocks which stores data. A compressing block(1300) compresses the data. Data offered from outside is stored to the selected memory blocks according to the control of an MTL(Memory Translation Layer)(1200). The compressing block compresses the data stored to the selected memory blocks according to the control of the MTL during the background operation. If a merge operation is started as a background operation, a data compressing compresses reads a valid data from a source block and compresses the data.
Abstract:
본 발명은 불휘발성 메모리 장치 및 컨트롤러를 포함하는 메모리 시스템의 동작 방법에 관한 것이다. 본 발명의 메모리 시스템의 동작 방법은 소스 워드를 수신하고, 수신된 소스 워드를 코드 워드로 변환하고, 그리고 변환된 코드 워드를 불휘발성 메모리 장치에 프로그램하는 것으로 구성된다. 변환된 코드 워드의 길이는 수신된 소스 워드의 길이보다 길다. 변환된 코드 워드의 제 1 디지털 비트들의 수 및 제 2 디지털 비트들의 수의 차이는 기준값보다 작다.
Abstract:
본 발명은 메모리 시스템 및 그것의 동작 방법에 관한 것이다. 본 발명에 의하면,불휘발성 메모리 장치를 포함하는 메모리 시스템이 동작하는 방법은 읽기 전압을 달리하여 관찰 메모리 셀을 적어도 1번 읽어 제 1 읽기 데이터 심볼을 형성하는 단계, 읽기 전압을 달리하여 상기 관찰 메모리 셀에 인접한 간섭 메모리 셀들을 적어도 1번 읽어 제 2 읽기 데이터 심볼들을 형성하는 단계, 및 상기 제 1 읽기 데이터 심볼과 상기 제 2 읽기 데이터 심볼들에 기반하여, 상기 관찰 메모리 셀의 논리값을 판별하는 단계로 구성된다.
Abstract:
PURPOSE: A memory system performing easer manipulation and a reading method thereof are provided to select eraser by repeating the reading operation in the same voltage level when error correction is impossible, thereby correcting the error by the eraser. CONSTITUTION: A memory controller reads a data from a memory in a reference voltage level(VR)(S110). If the error correction of data is impossible, an error correction circuit corrects an error of the data(S120,S125). Otherwise, the erasure decoding of the data is determined(S130). The eraser manipulator selects erasure candidates by repeating the reading operation in a reference voltage level(S140). A erasure manipulator manipulates eraser by the selected erasure candidates(S150).
Abstract:
PURPOSE: A washing machine and a control method thereof are provided to reduce the vibration by adjusting the unbalanced position, a rotating direction and an entering operation when the spin-drying operation is performed. CONSTITUTION: A control method of a washing machine is as follows. It is checked whether a first tub and a second tub perform spin-drying operations(S10), the spin-drying operations of the first and second tubs are adjusted and the vibration of the washing machine is reduced. The performing states of the spin-drying operations of the first and second tubs are checked based on whether while any one tub spin-dries, the other tub reached a spin-drying step(S14). If yes, the tub, which reached the spin-drying step later, is adjusted to perform the spin-drying operation in the opposite direction to the other tub(S15), which spin-dried first.
Abstract:
PURPOSE: A nonvolatile memory device and a memory system including the same are provided to perform an interleaving program and deinterleaving reading by storing program data according the reading period and writing period of the nonvolatile memory device. CONSTITUTION: A memory cell array(210) is connected to read/write circuit(230) through a bit line(BL). An address decoder(220) is connected to the memory cell array through a word line(WL). A reading/ writing circuit is connected to the storing circuit(240) through the data line(DL). The storing circuit is connected to the reading/ writing circuit through the data lines. The storing circuit operates in response to the control of a control logic(250).
Abstract:
PURPOSE: A data processing system and a code rate control scheme thereof are provided to optimize the overhead of error control coding by varying the code rate of single ECC(Error Correction Code) codec according to the property of a channel, thereby improving the reliability of a data processing system. CONSTITUTION: A data processing system comprises a memory(1000), an encoding and decoding block(2500), and a code rate control block(2600). The memory has a plurality of storage areas. The encoding and decoding block decodes the data read from an accessed storage area according to the fixed code rate. The code rate control block has code rates corresponding to the respective storage areas. The code rate control block changes the code rate corresponding to the accessed storage area which is determined by the data read from the accessed storage area and the data decoded by the encoding and decoding block.
Abstract:
PURPOSE: A semiconductor memory device and a data processing method thereof are provided to improve the reliability of data by programming the state of memory cells to avoid an arrangement which causes an error. CONSTITUTION: Data to be programmed in the row and column of a nonvolatile memory is arranged according to row and column directions. The data is coded to a modulation code according to the row or column directions. A modulation coding unit(110) codes program data from a host with a modulation coding method and transmits the coded program to a nonvolatile memory device(120). The modulation coding unit decodes the read data outputted from the nonvolatile memory device and transmits the decoded data to the host. The nonvolatile memory device writes the program data supplied from the modulation coding unit on the nonvolatile memory cells of a cell array(121). The coded program data is simultaneously loaded on a page buffer(122) of the nonvolatile memory device.