Abstract:
규칙적 중형다공성 금속 산화물(ordered mesoporous metal oxide) 및 상기 규칙적 중형다공성 금속 산화물에 내장된(embedded) 적어도 하나의 전도성 탄소를 포함하는 복합체를 포함하는 전극 활물질, 그 제조방법, 이를 포함한 전극 및 상기 전극을 포함한 리튬 전지가 제공된다.
Abstract:
Disclosed are a negative electrode active material, a method for producing the same, a negative electrode including the negative electrode active material, and a lithium secondary battery including the negative electrode. The negative electrode active material disclosed herein contains a titanium oxide nanotube, and the Raman spectrum of the negative electrode active material has a characteristic peak positioned in a Raman shift of 680 to 750 cm^(-1).
Abstract:
The present invention relates to a flexible secondary battery. The flexible secondary battery according to one embodiment of the present invention may include a fixing member which fixes one end of a laminated electrode structure. Therefore, even though the other end of the laminated electrode structure moves, stability can be maintained. More specifically, the present invention relates to a flexible secondary battery which additionally includes a protective layer on the outer surface of the laminated electrode structure. The thickness of the protective layer is 15 micrometers to 1 mm.
Abstract:
PURPOSE: A lithium titanium oxide is provided to manufacture a high-grade lithium battery by having a high purity and crystallizing property by satisfying a specific range of full width at half maximum 1 (FWHM1)/full width at half maximum 2 (FWHM2). CONSTITUTION: A lithium titanium oxide is a spinel type, and FWHM1 /FWHM2 in the range of 5-50 kHz is less than 1.70. The FWHM1 is a full width at half maximum of 7 Li peak in the range of -10 ppm to +10 ppm among a solid state-NMR spectrum of the lithium titanium oxide. The FWHM2 is a full width at half maximum of 7 Li peak in the range of -10 ppm to +10 ppm among a solid state-NMR spectrum of the lithium chloride standard reagent (STD). The FWHM1 and the FWHM2 are measured in the identical spinning rate (kHz). The manufacturing method of the lithium titanium oxide comprises the following steps. A mixture which includes a lithium-containing precursor and a titanium-containing precursor is prepared. The lithium titanium oxide is manufactured by heat treating the mixture. The titanium-containing precursor includes a second component, and the second component includes at least one of phosphorus (P) and potassium (K).
Abstract:
PURPOSE: A negative electrode active material is provided to improve initial charging and discharging efficiency, capacity maintenance, and high voltage properties of a high capacity lithium battery by using multi-layered nanotubes. CONSTITUTION: A negative electrode active material comprises: an inner layer which comprises an inner surface of metal nanotubes, and an outer layer which comprises an outer surface of the metal nanotubes. The inner layer comprises a first metal of which an atomic number is 13 or more. The outer layer comprises multilayered metal nanotubes which comprise a second metal different with the first metal. The second metal has a lower resistivity than the resistivity of the first metal. The diffusivity of lithium ions is high and volume expansion at charging is low. [Reference numerals] (AA) Metal oxide nanorod; (BB) Conductive substrate; (CC) First metal coating; (DD) Metal oxide template etching; (EE) First metal nanotube; (FF) Second metal coating; (GG) First metal; (HH) Second metal; (II) Inner and outer layer structures
Abstract:
PURPOSE: A method for formation of a buried gate electrode is provided to prevent the deterioration of a gate oxide film by using a silicon germanium layer as the gate electrode layer contacting with the gate oxide film. CONSTITUTION: A trench is formed inside a semiconductor substrate. A gate oxidation film(114) is formed on the semiconductor substrate having the trench. A first gate electrode layer(122) is formed on the gate oxidation film. A silicon layer is formed on the first gate electrode layer in order to fill up the trench. A part of the first gate electrode layer is selectively recessed in order to expose a part of the side of the silicon layer. A metal layer is formed on the semiconductor substrate having the part of the first gate electrode layer. A metal silicide layer(127) is formed on the top of the silicon layer by heat-treating the semiconductor substrate having a metal layer.