유연한 전극 조립체 및 이를 포함하는 전기화학 소자
    32.
    发明公开
    유연한 전극 조립체 및 이를 포함하는 전기화학 소자 审中-实审
    具有电极组件的柔性电极组件和电化学装置

    公开(公告)号:KR1020160031829A

    公开(公告)日:2016-03-23

    申请号:KR1020140122036

    申请日:2014-09-15

    CPC classification number: H01M10/0436 H01M2220/30

    Abstract: 유연한전극조립체및 이를포함하는전기화학소자가개시된다. 개시된전극조립체는, 서로교대로적층되는적어도하나의제1 전극판및 적어도하나의제2 전극판과, 상기제1 전극판과상기제2 전극판사이에마련되며상기제1 전극판과그 일면이접합되는분리막을포함하는전극적층구조체; 및상기전극적층구조체의일부분을고정하는고정부재;를포함한다.

    Abstract translation: 公开了柔性电极组件和包括其的电化学装置。 电极组件包括:电极层叠结构,包括彼此交替层叠的至少一个第一电极板和至少一个第二电极板,并且布置在第一电极和第二电极之间的分离膜具有一侧附接 到第一电极板; 以及固定部件,其固定电极层叠结构的一部分。 根据本发明,可以提高电极组件的耐久性和稳定性。

    매립 게이트 전극의 형성방법
    33.
    发明授权
    매립 게이트 전극의 형성방법 有权
    掩埋栅电极形成方法

    公开(公告)号:KR101584097B1

    公开(公告)日:2016-01-12

    申请号:KR1020090024573

    申请日:2009-03-23

    CPC classification number: H01L21/28052 H01L29/4236

    Abstract: 매립게이트전극의형성방법을개시한다. 본발명의매립게이트전극의형성방법은반도체기판내에트렌치를형성한다. 상기트렌치가형성된상기반도체기판위에게이트산화막을형성한다. 상기게이트산화막위에제1 게이트전극층을형성한다. 상기제1 게이트전극층위로상기트렌치를메우도록실리콘층을형성한다. 상기실리콘층의측면의일부가노출되도록상기제1 게이트전극층의일부를선택적으로리세스한다. 상기제1 게이트전극층의일부가리세스된상기반도체기판위에금속층을형성한다. 그리고상기금속층이형성된상기반도체기판을열처리하여상기실리콘층의상부에금속실리사이드층을형성한다.

    가요성 이차 전지
    37.
    发明公开
    가요성 이차 전지 审中-实审
    灵活的二次电池

    公开(公告)号:KR1020140035689A

    公开(公告)日:2014-03-24

    申请号:KR1020120102264

    申请日:2012-09-14

    Abstract: The present invention relates to a flexible secondary battery. The flexible secondary battery according to one embodiment of the present invention may include a fixing member which fixes one end of a laminated electrode structure. Therefore, even though the other end of the laminated electrode structure moves, stability can be maintained. More specifically, the present invention relates to a flexible secondary battery which additionally includes a protective layer on the outer surface of the laminated electrode structure. The thickness of the protective layer is 15 micrometers to 1 mm.

    Abstract translation: 本发明涉及柔性二次电池。 根据本发明的一个实施方式的柔性二次电池可以包括固定层叠电极结构的一端的固定构件。 因此,即使层叠电极结构的另一端移动,也能够保持稳定性。 更具体地说,本发明涉及一种在层压电极结构的外表面上另外包括保护层的柔性二次电池。 保护层的厚度为15微米至1mm。

    리튬 티타늄 산화물, 이의 제조 방법, 이를 포함한 음극 및 이를 채용한 리튬 전지
    38.
    发明公开
    리튬 티타늄 산화물, 이의 제조 방법, 이를 포함한 음극 및 이를 채용한 리튬 전지 审中-实审
    氧化钛,其制备方法,包括其的负极和包含负极的锂电池

    公开(公告)号:KR1020130091540A

    公开(公告)日:2013-08-19

    申请号:KR1020120012913

    申请日:2012-02-08

    CPC classification number: H01M4/485 C01G1/02 C01G23/005 H01M10/0525 Y02E60/122

    Abstract: PURPOSE: A lithium titanium oxide is provided to manufacture a high-grade lithium battery by having a high purity and crystallizing property by satisfying a specific range of full width at half maximum 1 (FWHM1)/full width at half maximum 2 (FWHM2). CONSTITUTION: A lithium titanium oxide is a spinel type, and FWHM1 /FWHM2 in the range of 5-50 kHz is less than 1.70. The FWHM1 is a full width at half maximum of 7 Li peak in the range of -10 ppm to +10 ppm among a solid state-NMR spectrum of the lithium titanium oxide. The FWHM2 is a full width at half maximum of 7 Li peak in the range of -10 ppm to +10 ppm among a solid state-NMR spectrum of the lithium chloride standard reagent (STD). The FWHM1 and the FWHM2 are measured in the identical spinning rate (kHz). The manufacturing method of the lithium titanium oxide comprises the following steps. A mixture which includes a lithium-containing precursor and a titanium-containing precursor is prepared. The lithium titanium oxide is manufactured by heat treating the mixture. The titanium-containing precursor includes a second component, and the second component includes at least one of phosphorus (P) and potassium (K).

    Abstract translation: 目的:提供一种锂二氧化钛,通过满足半峰全宽(FWHM1)/半峰全宽2(FWHM2)的特定范围,具有高纯度和结晶性,制造高级锂电池。 构成:钛酸锂是尖晶石型,FWHM1 / FWHM2在5-50kHz范围内小于1.70。 在锂钛氧化物的固体NMR光谱中,FWHM1是在10ppm至+10ppm的范围内的7Li峰的半峰全宽。 在氯化锂标准试剂(STD)的固体NMR光谱中,FWHM2是在10ppm至+10ppm范围内的7Li峰的半峰全宽。 FWHM1和FWHM2以相同的旋转速率(kHz)测量。 锂二氧化钛的制造方法包括以下步骤。 制备包含含锂前体和含钛前体的混合物。 通过对混合物进行热处理来制造钛酸锂。 含钛前体包括第二组分,第二组分包括磷(P)和钾(K)中的至少一种。

    다층금속나노튜브를 포함하는 음극활물질, 이를 포함하는 음극과 리튬전지 및 음극활물질 제조방법
    39.
    发明公开
    다층금속나노튜브를 포함하는 음극활물질, 이를 포함하는 음극과 리튬전지 및 음극활물질 제조방법 审中-实审
    包含多层金属纳米管,阳极和包含材料的锂电池的阳极活性材料及其制备方法

    公开(公告)号:KR1020130010733A

    公开(公告)日:2013-01-29

    申请号:KR1020110071549

    申请日:2011-07-19

    Abstract: PURPOSE: A negative electrode active material is provided to improve initial charging and discharging efficiency, capacity maintenance, and high voltage properties of a high capacity lithium battery by using multi-layered nanotubes. CONSTITUTION: A negative electrode active material comprises: an inner layer which comprises an inner surface of metal nanotubes, and an outer layer which comprises an outer surface of the metal nanotubes. The inner layer comprises a first metal of which an atomic number is 13 or more. The outer layer comprises multilayered metal nanotubes which comprise a second metal different with the first metal. The second metal has a lower resistivity than the resistivity of the first metal. The diffusivity of lithium ions is high and volume expansion at charging is low. [Reference numerals] (AA) Metal oxide nanorod; (BB) Conductive substrate; (CC) First metal coating; (DD) Metal oxide template etching; (EE) First metal nanotube; (FF) Second metal coating; (GG) First metal; (HH) Second metal; (II) Inner and outer layer structures

    Abstract translation: 目的:提供一种负极活性材料,通过使用多层纳米管,提高高容量锂电池的初始充放电效率,容量维护和高电压特性。 构成:负极活性物质包括:包含金属纳米管的内表面的内层和包含金属纳米管的外表面的外层。 内层包含原子序数为13以上的第一金属。 外层包括多层金属纳米管,其包含与第一金属不同的第二金属。 第二金属具有比第一金属的电阻率更低的电阻率。 锂离子的扩散性高,充电时的体积膨胀低。 (标号)(AA)金属氧化物纳米棒; (BB)导电基板; (CC)第一金属涂层; (DD)金属氧化物模板蚀刻; (EE)第一金属纳米管; (FF)第二金属涂层; (GG)第一金属; (HH)第二金属; (二)内外层结构

    매립 게이트 전극의 형성방법
    40.
    发明公开
    매립 게이트 전극의 형성방법 有权
    形成基底电极的方法

    公开(公告)号:KR1020100106112A

    公开(公告)日:2010-10-01

    申请号:KR1020090024573

    申请日:2009-03-23

    CPC classification number: H01L21/28052 H01L29/4236 H01L21/2255 H01L29/66348

    Abstract: PURPOSE: A method for formation of a buried gate electrode is provided to prevent the deterioration of a gate oxide film by using a silicon germanium layer as the gate electrode layer contacting with the gate oxide film. CONSTITUTION: A trench is formed inside a semiconductor substrate. A gate oxidation film(114) is formed on the semiconductor substrate having the trench. A first gate electrode layer(122) is formed on the gate oxidation film. A silicon layer is formed on the first gate electrode layer in order to fill up the trench. A part of the first gate electrode layer is selectively recessed in order to expose a part of the side of the silicon layer. A metal layer is formed on the semiconductor substrate having the part of the first gate electrode layer. A metal silicide layer(127) is formed on the top of the silicon layer by heat-treating the semiconductor substrate having a metal layer.

    Abstract translation: 目的:提供一种用于形成掩埋栅电极的方法,以通过使用硅锗层作为与栅氧化膜接触的栅电极层来防止栅极氧化膜的劣化。 构成:在半导体衬底内形成沟槽。 在具有沟槽的半导体衬底上形成栅极氧化膜(114)。 在栅极氧化膜上形成第一栅电极层(122)。 在第一栅极电极层上形成硅层以填满沟槽。 选择性地凹入第一栅电极层的一部分以暴露硅层的一侧的一部分。 在具有第一栅极电极层的一部分的半导体衬底上形成金属层。 通过对具有金属层的半导体基板进行热处理,在硅层的顶部形成金属硅化物层(127)。

Patent Agency Ranking