Abstract:
PURPOSE: A manufacturing method of a surface-coated lithium titante powder is provided to improve rate performance and capacity of a lithium titante battery. CONSTITUTION: A manufacturing method of a surface coated lithium titanate powder comprises a step of preparing micropowder of a lithium titanate; and a step of forming a coating layer by depositing a conductive material on the surface of the micropowder. The lithium titante oxide is represented by chemical formula: LixTiyO4 (0.5
Abstract translation:目的:提供表面涂覆锂钛粉末的制造方法,以提高锂钛电池的速率性能和容量。 构成:表面被覆钛酸锂粉末的制造方法包括:制备钛酸锂的微粉的步骤; 以及通过在所述微粉的表面上沉积导电材料来形成涂层的步骤。 锂钛氧化物由化学式LixTiyO4(0.5 <= x <= 3,1 <= y <= 2.5)表示。 至少一个或多个Li,Ti和O位点被杂原子取代。 涂层是包含非导电无机层和金属层的金属或双层涂层的单层涂层。 (AA)Al或Cu; (BB)LTO原料; (CC)LTO和Al或Cu络合物; (DD)涂层
Abstract:
PURPOSE: A manufacturing method of a silicon wire array by an electrochemical etching method is provided to prevent the contamination of a device by excluding anisotropic etching solution. CONSTITUTION: An etching mask is patterned on the surface of a silicon substrate. The surface of the silicon substrate is electrochemically etched. The electrochemical etching forms an etching area by applying an electric field having a first current density. The etching area includes micro openings. The etching area is etched by applying an electric field having a second current density higher than the first current density. [Reference numerals] (AA) Initial washing; (BB) Photolithography; (CC) BOE(natural oxide film removal); (DD) Al deposition; (EE) Electrochemical etching(first current density); (FF) Etching area; (GG) Micro opening; (HH) Electrochemical etching(second current density)
Abstract:
PURPOSE: A method for forming an etching hole for electrochemical etching is provided to form an etching hole of a reverse pyramid shape, thereby shortening the number of manufacturing processes. CONSTITUTION: A polystyrene particle(402) is regularly and periodically formed on a semiconductor substrate. The semiconductor substrate is processed by heat. The semiconductor substrate is etched by reactive ions with the polystyrene particle as an etching mask until an etching hole of a reverse pyramid shape is formed on the semiconductor substrate. The polystyrene particle is eliminated.