公开(公告)号：KR1020030093737A

公开(公告)日：2003-12-11

申请号：KR1020020031577

申请日：2002-06-05

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  권오중

IPC: H01L21/20

Abstract: PURPOSE: A method for forming a ruthenium thin film is provided to be capable of conserving constant charge and simultaneously improving surface roughness characteristics by using an electrolytic plating process. CONSTITUTION: After preparing a semiconductor substrate, the semiconductor substrate is activated by dipping the semiconductor substrate in an activation solution for depositing activation material on the surface of the semiconductor substrate. After dipping the activated semiconductor substrate in a ruthenium electrolytic plating solution, a ruthenium thin film is deposited on the surface of the activated substrate by applying reduction potential. Preferably, a diffusion barrier is formed at the semiconductor substrate by using TiN, TaN, WN, or TiSiN.

Abstract translation: 目的：提供一种形成钌薄膜的方法，其能够通过使用电解电镀工艺来保持恒定电荷并同时改善表面粗糙度特性。 构成：在制备半导体衬底之后，通过将半导体衬底浸入用于在半导体衬底的表面上沉积活化材料的活化溶液中来激活半导体衬底。 在将活化的半导体衬底浸渍在钌电解电镀溶液中后，通过施加还原电位将钌薄膜沉积在活化的衬底的表面上。 优选地，通过使用TiN，TaN，WN或TiSiN在半导体衬底处形成扩散阻挡层。

公开(公告)号：KR1020030071226A

公开(公告)日：2003-09-03

申请号：KR1020020010828

申请日：2002-02-28

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  김문수

IPC: H01L27/108

Abstract: PURPOSE: A method for fabricating a ruthenium thin film is provided to reduce a leakage current and increase a breakdown voltage by forming more ruthenium seeds while using halogen compound. CONSTITUTION: The ruthenium thin film is formed on a substrate in a reaction chamber through a chemical vapor deposition(CVD) method using ruthenium source gas and oxygen gas wherein the halogen compound is used. The substrate is prepared in the reaction chamber. The halogen compound is injected into the reaction chamber to deposit halogen atoms on the substrate. The ruthenium source gas and the oxygen gas are implanted to deposit ruthenium on the substrate having the deposited halogen atoms.

Abstract translation: 目的：提供一种钌薄膜的制造方法，通过在使用卤素化合物的同时形成更多的钌种子来减少漏电流并提高击穿电压。 构成：使用钌源气体和使用卤素化合物的氧气通过化学气相沉积（CVD）法在反应室中的基板上形成钌薄膜。 在反应室中制备底物。 将卤素化合物注入到反应室中以在基底上沉积卤素原子。 注入钌源气体和氧气以在具有沉积的卤素原子的衬底上沉积钌。

公开(公告)号：KR1020030056430A

公开(公告)日：2003-07-04

申请号：KR1020010086641

申请日：2001-12-28

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  서준모 ,  박한흠

IPC: H01L21/28

Abstract: PURPOSE: A method for forming a silver thin film as a semiconductor metal line is provided to be capable of improving the uniformity and the adhesive force of the silver thin film by processing a heat treatment after forming a metal seed layer using electroless plating process. CONSTITUTION: A semiconductor substrate(110) is prepared for processing the following processes. After cleaning the semiconductor substrate, the surface of the semiconductor substrate is activated. A metal seed layer(130) is formed on the resultant structure by using an electroless plating solution. A heat treatment is carried out at the resultant structure. A silver thin film(140) is formed on the metal seed layer by carrying out an electrolytic plating process using a silver electrolytic plating solution.

Abstract translation: 目的：提供一种形成银薄膜作为半导体金属线的方法，其能够通过使用化学镀处理在形成金属种子层之后进行热处理来提高银薄膜的均匀性和粘合力。 构成：制备半导体衬底（110）用于处理以下工艺。 在清洁半导体衬底之后，激活半导体衬底的表面。 通过使用化学镀溶液在所得结构上形成金属种子层（130）。 在所得结构下进行热处理。 通过使用银电解电镀液进行电解电镀，在金属种子层上形成银薄膜（140）。

公开(公告)号：KR1020030037607A

公开(公告)日：2003-05-14

申请号：KR1020010068867

申请日：2001-11-06

Applicant: 재단법인서울대학교산학협력재단

Inventor： 차승환 ,  김재정

IPC: C23C18/40

CPC classification number: C25D7/123 ,  C25D3/38 ,  C25D5/34

Abstract: PURPOSE: A method for forming copper film is provided in which formation of copper seed layer and copper electroplating are performed in the same container to prevent oxidation of the seed layer due to exposure to the atmosphere, and separate CVD or PVD apparatus for forming the copper seed layer is not required to reduce production cost. CONSTITUTION: The method comprises the steps of forming an electroless plated copper film on the surface of the object to be plated by dipping an object to be plated into an electroless plating solution comprising copper salt, complexing agent for inhibiting liquid reaction by forming copper ions and ligands, reducing agent for reducing copper ions, and a pH adjusting agent for maintaining a proper pH so that the reducing agent is oxidized; and forming an electroplated copper film on the object to be plated by directly impressing reduction potential to the object to be plated on which the electroless plated copper film is formed with the object to be plated not being taken out from the electroless plating solution, wherein the reducing agent is HCHO (formaldehyde), wherein the complexing agent is EDTA (ethylene-diamine tetraacetic acid), wherein the reduction potential is a potential corresponding to the range where copper exists for pH of the electroless plating solution in Pourbaix diagram for copper, and wherein the reduction potential is -0.5 V vs NHE or less.

Abstract translation: 目的：提供一种形成铜膜的方法，其中在同一容器中进行铜籽晶层和铜电镀的形成以防止由于暴露于大气中而引起种子层的氧化，并且分离用于形成铜的CVD或PVD装置 种子层不需要降低生产成本。 方法：该方法包括以下步骤：通过将待镀物体浸渍到包含铜盐的化学镀溶液中，通过形成铜离子来抑制液体反应的络合剂，在待镀物体的表面上形成化学镀铜膜;以及 配体，用于还原铜离子的还原剂和用于保持适当pH的pH调节剂以使还原剂被氧化; 通过对被镀物体形成电化学镀铜膜的方法，直接对被镀物体施加还原电位而形成电镀铜膜，并将其从化学镀液中取出，其中， 还原剂是HCHO（甲醛），其中络合剂是EDTA（乙二胺四乙酸），其中还原电位是对应于铜存在于铜的Pourbaix图中的化学镀溶液的pH的范围的电位的电位，以及 其中还原电位为-0.5V对NHE或更低。

公开(公告)号：KR100832040B1

公开(公告)日：2008-05-27

申请号：KR1020060091234

申请日：2006-09-20

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  황선미 ,  권오중

IPC: B01J19/00 ,  B01F5/00 ,  B81B1/00

Abstract: 본 발명은 마이크로 반응기 내부에 형성된 미세 유로에서의 촉매 반응을 수반하는 화학 반응을 일으키기 위하여 미세 유로가 촉매 층에 의한 막힘 현상이 없도록 미세 유로의 내벽에만 효과적으로 촉매 층을 코팅할 수 있는 방법을 제시한다. 본 발명에서는 슬러리 형태의 촉매 코팅액을 이용하여 채우기-건조법(fill and dry coating)을 적용함으로써, 마이크로 반응기의 미세 유로 내벽에만 촉매 층의 코팅이 이루어지도록 하였다. 또한 미세 유로 표면과 촉매 층과의 접착력 향상을 위하여 미세 유로 표면에 실리콘 산화막을 형성하였다. 본 발명의 기본 개념인 채우기-건조법에 따르면, 미세 유로의 크기와 더불어 촉매 슬러리의 점도에 따라 코팅되는 촉매 층의 두께 및 미세 유로의 막힘 현상에 영향을 주므로 이를 적절히 조절하여 최적화된 촉매 층을 갖는 마이크로 반응기를 얻을 수 있다.
마이크로 반응기, 미세 유로, 촉매 코팅액, 촉매 층, 슬러리

公开(公告)号：KR1020060067452A

公开(公告)日：2006-06-20

申请号：KR1020040106237

申请日：2004-12-15

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  안응진

IPC: C25D3/46

CPC classification number: C25D3/46 ,  C25D5/50 ,  C25D7/12 ,  H01L21/2885

Abstract: 본 발명은 은 박막 형성용 전기도금용액 및 그 용액을 이용한 은 박막 형성방법에 관한 것으로, 벤조트리아졸 유도체 및/또는 티오유레아 유도체를 첨가한 은 전기도금용액을 이용하여 은 박막을 형성하는 방법은 균열이나 틈과 같은 결함이 없는 균일한 은 박막을 형성하게 함으로써 고집적화 반도체 금속 배선 공정에 적합하게 활용할 수 있는 효과가 있다.
벤조트리아졸, 티오유레아, 은 박막, 전해도금, 첨가제

公开(公告)号：KR1020050029553A

公开(公告)日：2005-03-28

申请号：KR1020030065877

申请日：2003-09-23

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  이상철 ,  이창화 ,  차승환

IPC: C23C18/54

CPC classification number: C23C18/1651 ,  C23C18/405 ,  C23C18/44

Abstract: To provide an electroless plating method using additives for electroplating, the method for enabling additives effectively used in electroplating process to obtain an equal effect also in electroless plating process. The electroless plating method using additives for electroplating comprises: a step(a) of primarily electroless plating the treating object by dipping a treating object into an electroless plating solution for a concealment period, wherein the electroless plating solution does not contain additives; and a step(b) of secondly electroless plating the treating object by dipping the electroless plated treating object into an electroless plating solution containing the additives, wherein the additives are additives used in electroplating that are selected from the group consisting of an accelerating agent, an inhibitor and a stabilizer, wherein the electroless plating solution a copper plating solution containing copper ions or a silver plating solution containing silver ions, and wherein the method comprises a step(a) of primarily electroless plating copper on the treating object by dipping a treating object into an electroless copper plating solution comprising 5 to 8 g/L of copper sulfate, 2 to 3.5 g/L of formaldehyde, 14 to 18 g/L of ethylenediamine tetra acetic acid and 20 to 35 g/L of potassium hydroxide for a concealment period; and a step(b) of secondly electroless plating copper on the electroless copper plated treating object by dipping the electroless copper plated treating object into an electroless copper plating solution containing SPS(4,5-dithiaoctane-1,8-disulfonic acid) or MPSA(3-mercapto-1-propanesulfonate) in the electroless copper plating solution of the step(a).

Abstract translation: 为了提供使用用于电镀的添加剂的无电镀方法，可以在电镀工艺中有效使用添加剂的方法在化学镀处理中获得相同的效果。 使用电镀用添加剂的化学镀方法包括：通过将处理物浸渍到化学镀溶液中进行隐蔽处理，主要通过将处理物进行无电镀处理的步骤（a），其中化学镀溶液不含添加剂; 以及步骤（b），其通过将无电镀处理物浸渍到含有添加剂的无电解镀液中来对处理对象进行第二次无电镀处理，其中所述添加剂是电镀中使用的添加剂，其选自加速剂， 抑制剂和稳定剂，其中所述化学镀溶液是含有铜离子的镀铜溶液或含有银离子的镀银溶液，并且其中所述方法包括通过浸渍处理对象在处理对象上主要无电镀铜的步骤（a） 成为含有5〜8g / L的硫酸铜，2〜3.5g / L的甲醛，14〜18g / L的乙二胺四乙酸和20〜35g / L氢氧化钾的化学镀铜液，用于隐蔽 期; 以及通过将无电镀铜处理物浸渍到含有SPS（4,5-二硫辛烷-1,8-二磺酸）或MPSA的无电镀铜溶液中的无电镀铜处理物上的第二次无电镀铜的步骤（b） （3-巯基-1-丙磺酸盐）在步骤（a）的无电镀铜溶液中。

公开(公告)号：KR100475402B1

公开(公告)日：2005-03-10

申请号：KR1020020031577

申请日：2002-06-05

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  권오중

IPC: H01L21/20

Abstract: 반도체 배선용 전극으로 사용되는 루테늄 박막을 전해 도금으로 형성하는 방법에 대하여 개시한다. 본 발명의 루테늄 박막 형성 방법은: 반도체 기판을 마련하는 단계와, 활성화 용액에 기판을 침지시켜서 기판 표면에 활성화 물질을 증착하여 기판을 활성화하는 단계, 활성화된 기판을 루테늄 전해 도금 용액에 침지시키고 환원 전위를 인가하여 활성화된 기판 표면에 루테늄을 전해 도금하는 루테늄 증착 단계로 이루어지는 것을 특징으로 한다. 본 발명에 의하면, 활성화된 기판은 전해 도금법에 의한 보다 균일하게 루테늄이 증착되도록 유도함으로써, 누설 전류가 감소 및 항복 전압이 증가, 즉 전기적 특성이 좋아지게 되는 효과를 나타낸다. 또한, 간단한 공정으로 보다 얇은 단차 패턴의 고품질 루테늄 박막을 형성할 수 있어서, 유전 물질을 쉽게 채워 넣을 수 있는 디램 커패시터의 하부 전극을 형성할 수 있기 때문에 반도체 산업에 지대한 영향을 끼칠 수 있다.

公开(公告)号：KR100454633B1

公开(公告)日：2004-11-05

申请号：KR1020020000491

申请日：2002-01-04

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  차승환

IPC: H01L21/288

Abstract: PURPOSE: A method for processing the surface of a substrate is provided to be capable of activating the surface of the substrate, reducing surface resistance, and improving the uniformity of an electroless plating layer. CONSTITUTION: A semiconductor substrate is prepared. A native oxide layer formed on the surface of the semiconductor substrate, is etched and cleaned. The surface of the semiconductor substrate is activated by immersing the cleaned semiconductor substrate into an activating solution. At this time, the activating solution is made of a catalyst for oxidizing a reducing agent, an activating agent for activating the surface of the semiconductor substrate, and a complexing agent for forming metal ion and ligand of the catalyst. Preferably, the metal ion of the catalyst is made of palladium, silver, gold, copper, or platinum.

Abstract translation: 目的：提供一种用于处理基板表面的方法，其能够激活基板的表面，降低表面电阻并提高化学镀层的均匀性。 构成：准备半导体衬底。 形成在半导体衬底表面上的自然氧化层被蚀刻并清洁。 通过将清洁的半导体衬底浸入活化溶液中来激活半导体衬底的表面。 此时，活化溶液由用于氧化还原剂的催化剂，用于激活半导体衬底表面的活化剂和用于形成催化剂的金属离子和配体的络合剂构成。 优选地，催化剂的金属离子由钯，银，金，铜或铂制成。

公开(公告)号：KR1020040080465A

公开(公告)日：2004-09-20

申请号：KR1020030015227

申请日：2003-03-11

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  강무성

IPC: H01L21/28

Abstract: PURPOSE: A method of forming a metal layer for semiconductor wiring is provided to minimize increase of resistivity of a metal layer due to an addition agent in an electroplating process. CONSTITUTION: A diffusion barrier(120) is formed on a semiconductor substrate. A seed layer(140) is formed on the diffusion barrier. The semiconductor substrate is dipped into a copper electroplating solution including an addition agent. A copper layer is formed on the entire surface of the semiconductor substrate by applying the reductive electric potential to the copper electroplating solution. The semiconductor substrate is dipped into a copper electroplating solution without an addition agent. The copper layer is formed on the entire surface of the semiconductor substrate by applying the reductive electric potential to the copper electroplating solution. The resistivity of the semiconductor substrate is reduced by performing a thermal process.

Abstract translation: 目的：提供一种形成用于半导体布线的金属层的方法，以最小化由于电镀工艺中的添加剂导致的金属层的电阻率的增加。 构成：在半导体衬底上形成扩散阻挡层（120）。 种子层（140）形成在扩散阻挡层上。 将半导体衬底浸入包括添加剂的铜电镀溶液中。 通过向铜电镀溶液施加还原电位，在半导体衬底的整个表面上形成铜层。 将半导体衬底浸入不含添加剂的铜电镀溶液中。 通过向铜电镀溶液施加还原电位，在半导体衬底的整个表面上形成铜层。 通过进行热处理来降低半导体衬底的电阻率。