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公开(公告)号：KR1020130125095A
公开(公告)日：2013-11-18
申请号：KR1020120048595
申请日：2012-05-08
Applicant: 한국과학기술연구원
IPC: H01L21/324 , H01L21/26
CPC classification number: H01L21/02667 , H01J37/3211 , H01J37/32174 , H01J37/32412 , H01L21/265 , H01L21/324
Abstract: Disclosed are an apparatus and method for crystallizing an amorphous semiconductor thin film. The apparatus for crystallizing the amorphous semiconductor thin film according to the present invention includes: a vacuum chamber on which a substrate mounting stand on which a substrate is mounted is arranged and in which a vacuum state is maintained; a crystallization catalyst material deposition source which is connected to the vacuum chamber and injects crystallization catalyst material ions; a semiconductor thin film deposition source which is separated from the crystallization catalyst deposition source and deposits a semiconductor thin film on the substrate; and an inductively coupled plasma generator. [Reference numerals] (S10) Step for mounting a substrate on a substrate mounting stand arranged inside a vacuum chamber where a vacuum state is maintained;(S20) Step for injecting plasma ions of crystallization catalyst materials;(S30) Step for depositing an amorphous conductor thin film on the substrate;(S40) Step for heat-treating the amorphous conductor thin film
Abstract translation: 公开了一种使非晶半导体薄膜结晶的装置和方法。 根据本发明的用于结晶非晶半导体薄膜的装置包括：布置有其上保持有真空状态的其上安装有基板的基板安装台的真空室; 结晶催化剂材料沉积源，其连接到真空室并注入结晶催化剂材料离子; 半导体薄膜沉积源，其与所述结晶催化剂沉积源分离并将半导体薄膜沉积在所述衬底上; 和电感耦合等离子体发生器。 （S10）（S10）将基板安装在保持真空状态的真空室内的基板安装台上的步骤;（S20）结晶催化剂材料的等离子体离子注入工序;（S30）沉积非晶态的步骤 导电薄膜;（S40）非晶导体薄膜的热处理工序
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公开(公告)号：KR101305382B1
公开(公告)日：2013-09-06
申请号：KR1020110104070
申请日：2011-10-12
Applicant: 한국과학기술연구원
IPC: A61L27/28 , A61L27/02 , C23C16/503 , C23C16/515
CPC classification number: C23C14/205 , C23C14/345 , C23C14/358 , H01J37/3405 , H01J37/3467
Abstract: 생체재료로 이용되는 임플란트나 인공관절 등의 인공대체물과 그 시술에 쓰이는 여러 부속품들의 골형성 또는 골유착 성능을 향상시키기 위한 생체용 재료의 표면개질 장치 및 표면개질 방법을 제공한다. 본 발명의 실시예에 따른 생체용 재료의 표면개질 장치는 내부가 진공 상태를 유지하는 진공조, 진공조에 결합되어 생체활성 물질의 플라즈마 이온을 발생하는 마그네트론 증착원, 진공조 내에서 마그네트론 증착원에 대향하는 위치에 설치되어 시료가 장착되는 시료장착대, 마그네트론 증착원에 펄스직류 전력을 공급하여, 마그네트론 증착원으로부터 스퍼터링되는 생체활성 물질의 플라즈마 이온들을 발생시키는 펄스직류 전원부, 및 시료장착대에 음(-)의 고전압 펄스를 공급하여, 마그네트론 증착원으로부터 형성되는 생체활성 물질의 플라즈마 이온들을 이온주입시키는 고전압 펄스 전원부를 포함한다.
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公开(公告)号：KR1020130027934A
公开(公告)日：2013-03-18
申请号：KR1020110091468
申请日：2011-09-08
Applicant: 한국과학기술연구원
IPC: H01L21/265 , C23C14/48 , H05H1/46
CPC classification number: H01J37/32412 , H01J37/3405 , H01L21/2236
Abstract: PURPOSE: A plasma ion implantation apparatus and a method thereof are provided to perform an ion implantation process under a low process pressure. CONSTITUTION: A vacuum chamber(1) maintains vacuum condition. A magnetron evaporation source(9) generates pulse plasma in the vacuum chamber. The magnetron evaporation source is placed on a conductivity sample mounting plate(12). An RF-DC combination part(7) couples pulse direct current(6) and RF power(4) together. The RF-DC combination part supplies RF-DC coupling power(8) to the magnetron evaporation source. [Reference numerals] (10) Plasma; (11) Sample; (12) Sample mounting plate; (13) High voltage pulse power source part; (15) Gas control part; (16) Gas supply part; (19) Monitoring part; (2) RF power source part; (21) Vacuum pump; (3) RF matching part; (5) Pulse AC power source part; (7) RF-DC combination part; (9) Magnetron evaporation source
Abstract translation: 目的：提供等离子体离子注入装置及其方法，以在低过程压力下进行离子注入工艺。 构成：真空室（1）保持真空状态。 磁控管蒸发源（9）在真空室中产生脉冲等离子体。 磁控管蒸发源被放置在电导率样品安装板（12）上。 RF-DC组合部分（7）将脉冲直流（6）和RF功率（4）耦合在一起。 RF-DC组合部分向磁控管蒸发源提供RF-DC耦合功率（8）。 （附图标记）（10）等离子体 （11）样品; （12）样品安装板; （13）高压脉冲电源部分; （15）气体控制部分; （16）供气部分; （19）监测部分; （2）射频电源部分; （21）真空泵; （3）射频匹配部分; （5）脉冲交流电源部分; （7）RF-DC组合部分; （9）磁控管蒸发源
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公开(公告)号：KR101117261B1
公开(公告)日：2012-02-24
申请号：KR1020100086604
申请日：2010-09-03
Applicant: 한국과학기술연구원
IPC: H01L21/265 , H01L31/04 , H01L31/18
CPC classification number: Y02E10/50 , H01L21/265 , H01L31/04 , H01L31/18
Abstract: PURPOSE: An apparatus and method for forming a semiconductor material quantum dots in a dielectric thin film are provided to uniformly inject semiconductor materials into the dielectric thin film by using a high voltage pulse and a synchronized pulse magnetron deposition source. CONSTITUTION: Plasma gas is supplied to a vacuum chamber(10). Plasma for depositing a thin film is generated by applying first power to a first deposition source for depositing a dielectric thin film. The dielectric thin film of sputtered materials is deposited from the first deposition source. Plasma ions are generated by applying second power to a second deposition source(26) for generating ions of compound or semiconductor element. The quantum dot of the semiconductor material is made by injecting the plasma ions of the sputtered semiconductor materials from a second deposition source to the dielectric thin film.
Abstract translation: 目的：提供一种用于在电介质薄膜中形成半导体材料量子点的装置和方法，以通过使用高电压脉冲和同步脉冲磁控管沉积源将半导体材料均匀地注入电介质薄膜。 构成：将等离子体气体供应到真空室（10）。 用于沉积薄膜的等离子体通过将第一功率施加到用于沉积介电薄膜的第一沉积源来产生。 溅射材料的电介质薄膜从第一沉积源沉积。 通过向第二沉积源（26）施加第二功率以产生化合物或半导体元件的离子来产生等离子体离子。 半导体材料的量子点通过将溅射的半导体材料的等离子体离子从第二沉积源注入到电介质薄膜中而制成。
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公开(公告)号：KR1020110085822A
公开(公告)日：2011-07-27
申请号：KR1020100028027
申请日：2010-03-29
Applicant: 한국과학기술연구원
IPC: H01L21/265 , B82B3/00
CPC classification number: H01J37/32412 , C23C14/48 , H01J37/3244 , H01L21/265
Abstract: PURPOSE: A plasma ion implantation device of noble metals and a method thereof, and a method for forming nano-sized noble metal composites by using the same are provided to form a noble metal cluster, thereby forming nano-sized noble metal composites on the surface of a dielectric object. CONSTITUTION: A vacuum chamber(110) keeps inside with the vacuum condition. A magnetron deposition source(120) is arranged in the vacuum chamber for thin film deposition. A sample mounting stand(130) faces the magnetron deposition source in the vacuum chamber. A pulse DC power supply device(140) applies pulse DC power to the magnetron deposition source. A high voltage pulse power supply device(150) applies a high voltage pulse, which is synchronized with the pulse DC power, to the sample mounting stand.
Abstract translation: 目的：提供贵金属的等离子体离子注入装置及其方法，以及通过使用它们形成纳米级贵金属复合材料的方法以形成贵金属簇，从而在表面上形成纳米级的贵金属复合材料 的介电物体。 构成：真空室（110）保持真空状态。 在真空室中布置有磁控管沉积源（120），用于薄膜沉积。 样品安装台（130）面对真空室中的磁控管沉积源。 脉冲直流电源装置（140）向磁控管沉积源施加脉冲直流电力。 高压脉冲电源装置（150）将与脉冲直流电力同步的高电压脉冲施加到样品安装台。
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Patent Agency Ranking
公开(公告)号：KR1020110046055A
公开(公告)日：2011-05-04
申请号：KR1020090102872
申请日：2009-10-28
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A device and method for silver element plasma ion injection capable of the improvement of anti-microbial property are provided to generate high density silver plasma by applying very high electricity at the moment when the pulse is applied. CONSTITUTION: A device for silver element plasma ion injection comprises a vacuum chamber(110), a magnetron deposition(120), a sample mount(130), a first power source feeding member and a second power source feeding member. The vacuum chamber keeps the inside under vacuum condition. The magnetron deposition performs thin film deposition. The sample mount is installed in the location facing the deposition within the vacuum chamber and mount a simple. The first power source feeding member applies the pulse direct current electricity in the deposition. The second power source feeding member accelerates the plasma ions of the elemental silver towards sample.
Abstract translation: 目的：提供能够提高抗菌性能的银元素等离子体离子注入装置和方法，以在施加脉冲时施加非常高的电力来产生高密度银等离子体。 构成：用于银元素等离子体离子注入的装置包括真空室（110），磁控管沉积（120），样品安装座（130），第一电源馈送构件和第二电源馈送构件。 真空室保持真空状态。 磁控管沉积执行薄膜沉积。 样品架安装在真空室内沉积物的位置，并安装简单。 第一电源馈送部件在沉积中施加脉冲直流电。 第二电源馈送部件将元素银的等离子体离子加速到样品。
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公开(公告)号：KR1020100038642A
公开(公告)日：2010-04-15
申请号：KR1020080097688
申请日：2008-10-06
Applicant: 한국과학기술연구원
CPC classification number: A61L27/30 , A61F2002/30003 , A61L27/04 , A61L27/045 , A61L27/047 , A61L27/06
Abstract: PURPOSE: A bio-material and a manufacturing method thereof are provided, which can improve durability of the prosthesis in the corrosion and wear environment. CONSTITUTION: A bio-material manufacturing method comprises: a step(S10) of providing one or more metal powder selected from the group consisting of titanium, zirconium, alloy in which the titanium content is 80wt% or greater, and alloy in which the zirconium content is 80wt% or greater; a step(S20) of providing the base material in which the metal powder is applied; a step(S30) of forming nitrogen gas atmosphere; a step(S40) of providing composite that nitride is formed in the surface of the metal powder; a step(S50) of providing the complex coating layer; and a step(S60) of post-processing the complex coating layer.
Abstract translation: 目的：提供生物材料及其制造方法，其可以改善假体在腐蚀和磨损环境中的耐久性。 构成：生物材料制造方法包括：提供一种或多种选自钛，锆，钛含量为80重量％以上的合金的金属粉末的步骤（S10），其中锆 含量为80wt％以上; 提供其中施加金属粉末的基材的步骤（S20）; 形成氮气气氛的工序（S30） 提供在金属粉末的表面中形成氮化物的复合材料的步骤（S40） 提供复合涂层的步骤（S50） 以及后处理复合涂层的步骤（S60）。
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公开(公告)号：KR100854794B1
公开(公告)日：2008-08-27
申请号：KR1020070140359
申请日：2007-12-28
Applicant: 한국과학기술연구원
CPC classification number: C01B3/503 , B01D53/04 , B01D61/58 , C01B3/0005 , C01B2203/0405
Abstract: An apparatus for separating hydrogen is provided to purify a large amount of hydrogen at a low energy cost from a mixed gas containing argon, hydrocarbons, methane, oxygen, nitrogen, carbon monoxide, hydrogen, and carbon dioxide. An apparatus(100) for separating hydrogen comprises: a temperature control unit(10) for controlling temperature of mixed gas containing hydrogen to a range of 200 to 800 °C; a hydrogen separation unit(20) including a plurality of hydrogen permeation membranes which are stacked in multistage within a housing for flowing in and out the mixed gas, and which are spaced apart from one another, and a hydrogen adsorption part and a hydrogen desorption part alternately formed between the hydrogen permeation membranes; and pressure control units(40) for controlling the pressure such that a pressure of the hydrogen adsorption part is higher than that of the hydrogen desorption part. The hydrogen permeation membrane is a metal membrane, a ceramic film, or a polymer film. The temperature control unit comprises a heater for heating the mixed gas. The hydrogen separation unit includes a hydrogen collector(50) for collecting desorbed hydrogen. The hydrogen separation unit includes an insulating member(30) for insulating the housing from the external air. Further, the insulating member comprises an insulating bed mounted on the housing and an insulating cover for insulating from external air.
Abstract translation: 提供了一种用于分离氢气的装置，从含有氩气，烃，甲烷，氧气，氮气，一氧化碳，氢气和二氧化碳的混合气体中以较低的能源成本净化大量的氢气。 用于分离氢的装置（100）包括：用于将含氢气的混合气体的温度控制在200至800℃范围内的温度控制单元（10）; 氢分离单元（20），其包括多个氢渗透膜，所述多个氢透过膜在壳体内多层堆叠以流入和流出所述混合气体，并且彼此间隔开;以及氢吸附部分和氢解吸部分 交替形成在氢渗透膜之间; 以及用于控制压力使得氢吸附部分的压力高于氢解吸部件的压力的压力控制单元（40）。 氢渗透膜是金属膜，陶瓷膜或聚合物膜。 温度控制单元包括用于加热混合气体的加热器。 氢分离单元包括用于收集解吸的氢的氢收集器（50）。 氢分离单元包括用于将壳体与外部空气绝缘的绝缘构件（30）。 此外，绝缘构件包括安装在壳体上的绝缘床和用于与外部空气绝缘的绝缘盖。
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公开(公告)号：KR1020020069608A
公开(公告)日：2002-09-05
申请号：KR1020010009862
申请日：2001-02-27
Applicant: 한국과학기술연구원
IPC: H01L21/265
Abstract: PURPOSE: An ion implantation method using pulse plasma is provided to effectively improve abrasion resistance and intensity of the surface of a sample, by applying a radio frequency(RF) pulse and a negative direct current(DC) high voltage to a plasma generating gas and by uniformly implanting ions into the surface of the sample. CONSTITUTION: The sample is positioned on a sample table(14) inside a vacuum bath(10). Gas to be transformed into plasma is supplied to the vacuum bath. An RF pulse is radiated to the gas. The negative DC high voltage is applied to the sample to implant plasma ions of a plasma state into the surface of the sample.
Abstract translation: 目的：提供使用脉冲等离子体的离子注入方法，通过对等离子体发生气体施加射频（RF）脉冲和负直流（DC）高电压，有效地提高样品表面的耐磨性和强度， 通过均匀地将离子注入到样品的表面中。 构成：将样品放置在真空浴（10）内的样品台（14）上。 将要转化为等离子体的气体供应到真空浴。 RF脉冲被辐射到气体。 将负DC高电压施加到样品以将等离子体状态的等离子体离子注入到样品的表面中。
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公开(公告)号：KR100217538B1
公开(公告)日：1999-09-01
申请号：KR1019960010740
申请日：1996-04-10
Applicant: 한국과학기술연구원
IPC: H05H1/00
Abstract: 본 발명은 진공조 내에 위치한 시료대 위에 판상의 고분자 시료를 위치시키고, 진공조 내에 가스를 도입하여 가스로부터 이온 플라즈마를 발생시키고, 부(-)의 고전압 펄스를 시료에 가하여, 플라즈마로부터 추출된 이온이 고에너지를 보유한 채 고분자 시료의 표면에 주입되도록 하는 것이 특징인 고분자 소재의 표면 개질 방법 및 그를 위한 장치에 관한 것이다. 본 발명의 방법을 따르면, 입사되는 이온의 에너지가 종래의 플라즈마를 이용한 고분자 표면 개질 방법에서의 이온 에너지보다 매우 높으므로 표면 개질 효율이 탁월하고 표면 이하 깊은 층까지 개질시 킬 수 있어 처리 후 시간에 따른 표면 특성 저하를 효과적으로 방지할 수 있게 된다. 또한, 본 발명의 고분자 표면 개질 방법은 대면적의 시료를 단시간내에 용이하게 균일 처리할 수 있으며, 고전압 펄스를 조절하여 이온 에너지를 쉽게 변화시킬 수 있을 뿐 아니라 장치의 구조 또한 매우 단순화시키므로 대량 생산 장치에 유리하다.
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