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公开(公告)号:KR1020130128733A
公开(公告)日:2013-11-27
申请号:KR1020120052688
申请日:2012-05-17
Applicant: 한국과학기술연구원
Abstract: The present invention relates to ion injection and sputtering in order to provide a method and a device for injecting plasma ions and sputtering to simultaneously or gradually perform ion injection and sputtering processes for the top of materials inside a vacuum chamber without exposing them to the outside by using a conductive sample mount to mount samples and magnetron deposition sources mounted with sputtering targets inside the vacuum chamber. [Reference numerals] (30) RF power device;(40) DC power device;(90) Gas flow control device;(94) Gas storage device;(96) High voltage pulse power device;(98) Vacuum pump
Abstract translation: 本发明涉及离子注入和溅射,以提供一种用于等离子体离子注入和溅射的方法和装置,以同时或逐渐地对真空室内的材料的顶部进行离子注入和溅射处理,而不会使其暴露于外部 使用导电样品架将样品和安装有溅射靶的磁控管沉积源安装在真空室内。 (30)射频功率器件;(40)直流电源装置;(90)气体流量控制装置;(94)储气装置;(96)高压脉冲功率器件;(98)真空泵
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公开(公告)号:KR1020150000615A
公开(公告)日:2015-01-05
申请号:KR1020130072911
申请日:2013-06-25
Applicant: 한국과학기술연구원
CPC classification number: H01L51/5016 , H01L51/0035 , H01L51/5012 , H01L2924/0615
Abstract: 백색 유기 발광 소자는 기판, 기판 위에 위치하는 제1 전극, 제1 전극 위에 위치하는 발광층, 그리고 발광층 위에 위치하는 제2 전극을 포함하고, 발광층은 폴리스티렌 유기물을 포함한다.
Abstract translation: 本发明涉及能够提高发光效率并简化制造工艺的白色有机发光元件。 根据本发明实施例的白色有机发光元件包括:基板; 布置在所述基板上的第一电极; 布置在所述第一电极上的发光层; 以及布置在发光层上的第二电极。
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公开(公告)号:KR101541108B1
公开(公告)日:2015-07-31
申请号:KR1020140041802
申请日:2014-04-08
Applicant: 한국과학기술연구원
IPC: H01L31/0224 , H01L31/042
CPC classification number: Y02E10/50 , H01L31/042 , H01L31/0224
Abstract: 본발명의태양전지에따르면, 업컨버전입자를포함하는광변환층과다수의돌기형태의미세패턴을갖는후면전극층을구비함으로써입사된태양광중에서흡수되지못한장파장의빛을흡수가가능한단파장의빛으로변환할수 있고, 광변환층의전면과후면에버퍼층및 절연막층을더 포함하여광변환층의발광효율을증가시킬수 있다. 따라서, 이러한구조의태양전지는광 손실이낮아우수한광전변환효율을나타낸다.
Abstract translation: 根据本发明的太阳能电池,在入射的太阳光中未被吸收的长波长的光被转换为短波长的光,该波长被包含具有多个具有突出形状的精细图案的后电极层吸收, 通过在光转换层的前侧和后侧进一步包括缓冲层和绝缘层,增加了包括上转换粒子的光转换层和光转换层的发光效率。 因此,具有上述结构的太阳能电池通过减少光损耗而显示出高的光转换效率。
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公开(公告)号:KR1020130125095A
公开(公告)日:2013-11-18
申请号:KR1020120048595
申请日:2012-05-08
Applicant: 한국과학기술연구원
IPC: H01L21/324 , H01L21/26
CPC classification number: H01L21/02667 , H01J37/3211 , H01J37/32174 , H01J37/32412 , H01L21/265 , H01L21/324
Abstract: Disclosed are an apparatus and method for crystallizing an amorphous semiconductor thin film. The apparatus for crystallizing the amorphous semiconductor thin film according to the present invention includes: a vacuum chamber on which a substrate mounting stand on which a substrate is mounted is arranged and in which a vacuum state is maintained; a crystallization catalyst material deposition source which is connected to the vacuum chamber and injects crystallization catalyst material ions; a semiconductor thin film deposition source which is separated from the crystallization catalyst deposition source and deposits a semiconductor thin film on the substrate; and an inductively coupled plasma generator. [Reference numerals] (S10) Step for mounting a substrate on a substrate mounting stand arranged inside a vacuum chamber where a vacuum state is maintained;(S20) Step for injecting plasma ions of crystallization catalyst materials;(S30) Step for depositing an amorphous conductor thin film on the substrate;(S40) Step for heat-treating the amorphous conductor thin film
Abstract translation: 公开了一种使非晶半导体薄膜结晶的装置和方法。 根据本发明的用于结晶非晶半导体薄膜的装置包括:布置有其上保持有真空状态的其上安装有基板的基板安装台的真空室; 结晶催化剂材料沉积源,其连接到真空室并注入结晶催化剂材料离子; 半导体薄膜沉积源,其与所述结晶催化剂沉积源分离并将半导体薄膜沉积在所述衬底上; 和电感耦合等离子体发生器。 (S10)(S10)将基板安装在保持真空状态的真空室内的基板安装台上的步骤;(S20)结晶催化剂材料的等离子体离子注入工序;(S30)沉积非晶态的步骤 导电薄膜;(S40)非晶导体薄膜的热处理工序
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