-
公开(公告)号：US20210358739A1
公开(公告)日：2021-11-18
申请号：US17388773
申请日：2021-07-29
Applicant: ASM IP HOLDING B.V.
Inventor： Eva E. Tois , Suvi P. Haukka , Raija H. Matero , Elina Färm , Delphine Longrie , Hidemi Suemori , Jan Willem Maes , Marko Tuominen , Shaoren Deng , Ivo Johannes Raaijmakers , Andrea Illiberi
IPC: H01L21/02 , H01L21/311 , H01L21/56 , H01L21/768 , H01L21/67 , H01L23/528 , H01L23/532 , H01L23/522 , H01L23/31 , H01L21/32 , H01L21/027 , H01L21/321 , H01L21/3105
Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
-
公开(公告)号：US11145506B2
公开(公告)日：2021-10-12
申请号：US16588600
申请日：2019-09-30
Applicant: ASM IP Holding B.V.
Inventor： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , VamsI Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie
IPC: H01L21/02 , H01L21/324 , H01L21/67
Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
-
公开(公告)号：US20250149325A1
公开(公告)日：2025-05-08
申请号：US19014870
申请日：2025-01-09
Applicant: ASM IP Holding B.V.
Inventor： Shaoren Deng , Andrea Illiberi , Daniele Chiappe , Eva Tois , Giuseppe Alessio Verni , Michael Givens , Varun Sharma , Chiyu Zhu , Shinya Iwashita , Charles Dezelah , Viraj Madhiwala , Jan Willem Maes , Marko Tuominen , Anirudhan Chandrasekaran
Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.
-
公开(公告)号：US20250092515A1
公开(公告)日：2025-03-20
申请号：US18967466
申请日：2024-12-03
Applicant: ASM IP Holding B.V.
Inventor： Viraj Madhiwala , Daniele Chiappe , Eva Tois , Marko Tuominen , Charles Dezelah , Shaoren Deng , Anirudhan Chandrasekaran , YongGyu Han , Michael Givens , Andrea llliberi , Vencent Vandalon
IPC: C23C16/40 , C23C16/455 , H01J37/32
Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.
-
公开(公告)号：US20250069885A1
公开(公告)日：2025-02-27
申请号：US18946444
申请日：2024-11-13
Applicant: ASM IP Holding B.V.
Inventor： Eva E. Tois , Suvi P. Haukka , Raija H. Matero , Elina Färm , Delphine Longrie , Hidemi Suemori , Jan Willem Maes , Marko Tuominen , Shaoren Deng , Ivo Johannes Raaijmakers , Andrea Illiberi
IPC: H01L21/02 , H01L21/027 , H01L21/3105 , H01L21/311 , H01L21/32 , H01L21/321 , H01L21/56 , H01L21/67 , H01L21/768 , H01L23/31 , H01L23/522 , H01L23/528 , H01L23/532
Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
-
Patent Agency Ranking
公开(公告)号：US12170197B2
公开(公告)日：2024-12-17
申请号：US17388773
申请日：2021-07-29
Applicant: ASM IP HOLDING B.V.
Inventor： Eva E. Tois , Suvi P. Haukka , Raija H. Matero , Elina Färm , Delphine Longrie , Hidemi Suemori , Jan Willem Maes , Marko Tuominen , Shaoren Deng , Ivo Johannes Raaijmakers , Andrea Illiberi
IPC: H01L21/02 , H01L21/027 , H01L21/3105 , H01L21/311 , H01L21/32 , H01L21/321 , H01L21/56 , H01L21/67 , H01L21/768 , H01L23/31 , H01L23/522 , H01L23/528 , H01L23/532
Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.
-
公开(公告)号：US20240282572A1
公开(公告)日：2024-08-22
申请号：US18441148
申请日：2024-02-14
Applicant: ASM IP Holding B.V.
Inventor： Viraj Madhiwala , Vincent Vandalon , Nadadur Veeraraghavan Srinath , Eva Tois , Shaoren Deng , Daniele Chiappe , Marko Tuominen , Charles Dezelah , YongGyu Han , Kranthi Kumar Vaidyula , Glen Wilk , David Zanders , Aranzazu Maestre Caro
IPC: H01L21/02 , C23C16/04 , C23C16/40 , C23C16/455
CPC classification number: H01L21/02205 , C23C16/04 , C23C16/40 , C23C16/403 , C23C16/405 , C23C16/45527 , C23C16/45544 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/0228
Abstract: The disclosure relates to methods and processing assemblies selectively depositing metal oxide by cyclic vapor deposition techniques. Such methods may be used for, for example, processing semiconductor substrates. More particularly, the disclosure relates to methods and assemblies for selectively depositing a metal oxide layer. Various embodiments of the current disclosure relate to selective deposition of metal oxide layers, such as dielectric layers, etch stop layers and threshold voltage shifting layers. In particular, the disclosure relates to the deposition of metal oxide layers, such as yttrium oxide (Y2O3), and doped metal oxide layers, such as yttrium-doped aluminum oxide (AlYOx) by cyclic vapor deposition processes.
-
公开(公告)号：US20240047197A1
公开(公告)日：2024-02-08
申请号：US18491428
申请日：2023-10-20
Applicant: ASM IP Holding B.V.
Inventor： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie , Viljami J. Pore
IPC: H01L21/02 , H01L21/324 , H01L21/67
CPC classification number: H01L21/0228 , H01L21/02669 , H01L21/324 , H01L21/67213 , H01L21/02315 , H01L21/02068 , H01L21/02178 , H01L21/02118
Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
-
公开(公告)号：US20230386934A1
公开(公告)日：2023-11-30
申请号：US18322286
申请日：2023-05-23
Applicant: ASM IP Holding, B.V.
Inventor： Shaoren Deng , Marko Tuominen , Vincent Vandalon , Eva E. Tois , Viraj Madhiwala , YongGyu Han , Daniele Chiappe , Michael Givens , Ren-Jie Chang , Giuseppe Alessio Verni , Timothee Blanquart , René Henricus Jozef Vervuurt
IPC: H01L21/8238
CPC classification number: H01L21/823807
Abstract: Disclosed are methods and related systems for forming a structure. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a first layer on one or more first surfaces in a lower part of a gap, and forming a second layer on one or more second surfaces in an upper part of a gap.
-
公开(公告)号：US11830732B2
公开(公告)日：2023-11-28
申请号：US17470177
申请日：2021-09-09
Applicant: ASM IP HOLDING B.V.
Inventor： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie , Viljami Pore
IPC: H01L21/02 , H01L21/324 , H01L21/67
CPC classification number: H01L21/0228 , H01L21/02068 , H01L21/02118 , H01L21/02178 , H01L21/02315 , H01L21/02669 , H01L21/324 , H01L21/67213
Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
-
-
-
-
-
-
-
-
-
Search Results
43
records
(took 0.04 seconds)
