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公开(公告)号：US11428521B2
公开(公告)日：2022-08-30
申请号：US17519641
申请日：2021-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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32.发明授权公开(公告)号：US11009343B2
公开(公告)日：2021-05-18
申请号：US16277317
申请日：2019-02-15
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Vasco Tomas Tenner , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Patrick Warnaar , Grzegorz Grzela , Martin Jacobus Johan Jak
Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
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公开(公告)号：US20200218166A1
公开(公告)日：2020-07-09
申请号：US16733890
申请日：2020-01-03
Applicant: ASML NETHERLANDS B.V.
Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
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34.发明授权公开(公告)号：US10481506B2
公开(公告)日：2019-11-19
申请号：US15967861
申请日：2018-05-01
Applicant: ASML Netherlands B.V.
Inventor： Murat Bozkurt , Maurits Van Der Schaar , Patrick Warnaar , Martin Jacobus Johan Jak , Mohammadreza Hajiahmadi , Grzegorz Grzela , Lukasz Jerzy Macht
IPC: G03F7/20 , G01N21/47 , G01N21/956 , G01N21/95
Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
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Patent Agency Ranking
35.发明申请公开(公告)号：US20190265028A1
公开(公告)日：2019-08-29
申请号：US16277317
申请日：2019-02-15
Applicant: Stichting VU , Stichting Nederlandse Wetenschappelijk Onderzoek Instituten , Universiteit van Amsterdam , ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Vasco Tomas Tenner , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Patrick Warnaar , Grzegorz Grzela , Martin Jacobus Johan Jak
Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
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36.发明授权公开(公告)号：US10310389B2
公开(公告)日：2019-06-04
申请号：US15942423
申请日：2018-03-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh Pandey , Jin Lian , Samee Ur Rehman , Martin Jacobus Johan Jak
Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.
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37.发明申请公开(公告)号：US20180321599A1
公开(公告)日：2018-11-08
申请号：US15967861
申请日：2018-05-01
Applicant: ASML Netherlands B.V.
Inventor： Murat BOZKURT , Maurits Van Der Schaar , Patrick Warnaar , Martin Jacobus Johan Jak , Mohammadreza Hajiahmadi , Grzegorz Grzela , Lukasz Jerzy Macht
IPC: G03F7/20
CPC classification number: G03F7/70633 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70616 , G03F7/7085
Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
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公开(公告)号：US09753296B2
公开(公告)日：2017-09-05
申请号：US14805402
申请日：2015-07-21
Applicant: ASML Netherlands B.V.
Inventor： Gerbrand Van Der Zouw , Martin Jacobus Johan Jak , Martin Ebert
CPC classification number: G02B27/283 , G01J1/08 , G01N21/8806 , G01N21/9501 , G01N2021/8848 , G01N2201/0675 , G02F1/01 , G03F7/70633
Abstract: In an illumination system (12, 13) for a scatterometer, first and second spatial light modulators lie in a common plane and are formed by different portions of a single liquid crystal cell (260). Pre-polarizers (250) apply polarization to first and second radiation prior to the spatial light modulators. A first spatial light modulator (236-S) varies a polarization state of the first radiation in accordance with a first programmable pattern. Second spatial light modulator (236-P) varies a polarization state of the second radiation accordance with a second programmable pattern. A polarizing beam splitter (234) selectively transmits each of the spatially modulated first and second radiation to a common output path, depending on the polarization state of the radiation. In an embodiment, functions of pre-polarizers are performed by the polarizing beam splitter.
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39.发明授权Metrology method and apparatus, substrate, lithographic system and device manufacturing method 有权计量方法和设备，基板，光刻系统和器件制造方法公开(公告)号：US09535338B2
公开(公告)日：2017-01-03
申请号：US14403010
申请日：2013-05-01
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70625 , G03F7/70483 , G03F7/70633 , G03F7/70683
Abstract: A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.
Abstract translation: 由基板上的光刻工艺形成的测量目标包括多个分量光栅。 使用由分量光栅衍射的+1和-1次辐射来形成目标的图像。 识别检测到的图像中的感兴趣区域（ROI）对应于分量光栅。 在每个ROI内的强度值被处理并在图像之间进行比较，以获得不对称性的测量并因此获得覆盖误差。 在分量光栅之间形成分离区并设计成在图像中提供暗区。 在一个实施例中，选择其边界落入对应于分离区域的图像区域内的ROI。 通过这种措施，使不对称测量更加容忍ROI的位置的变化。 黑暗的地区也有助于识别图像中的目标。
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