公开(公告)号：US10802409B2

公开(公告)日：2020-10-13

申请号：US15962826

申请日：2018-04-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang Fan ,  Maurits Van Der Schaar ,  Youping Zhang

IPC: G03F7/20

Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.

公开(公告)号：US10802408B2

公开(公告)日：2020-10-13

申请号：US16343168

申请日：2017-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Erik Johannes Maria Wallerbos ,  Maurits Van Der Schaar ,  Frank Staals ,  Franciscus Hendricus Arnoldus Elich

IPC: G03F7/20

Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

公开(公告)号：US10718604B2

公开(公告)日：2020-07-21

申请号：US16507297

申请日：2019-07-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

IPC: G01B11/26 ,  G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US10437163B2

公开(公告)日：2019-10-08

申请号：US15650401

申请日：2017-07-14

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Murat Bozkurt ,  Patrick Warnaar ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03F9/00 ,  G01N21/956 ,  G03F7/20

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.

公开(公告)号：US20190018326A1

公开(公告)日：2019-01-17

申请号：US16125074

申请日：2018-09-07

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Omer Abubaker Omer Adam ,  Te-Chih Huang ,  Youping Zhang

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/88

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

公开(公告)号：US10073357B2

公开(公告)日：2018-09-11

申请号：US15117409

申请日：2015-01-28

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Omer Abubaker Omer Adam ,  Te-Chih Huang ,  Youping Zhang

IPC: G01B11/00 ,  G03B27/32 ,  G03B27/74 ,  G03F7/20 ,  G01N21/47 ,  G01N21/88

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G01N21/8806 ,  G01N2201/12 ,  G03F7/70683

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

公开(公告)号：US10061212B2

公开(公告)日：2018-08-28

申请号：US15477602

申请日：2017-04-03

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Richard Johannes Franciscus Van Haren ,  Everhardus Cornelis Mos ,  Youping Zhang

IPC: G03F7/20 ,  H01L21/66 ,  H01L23/544

CPC classification number: G03F7/70633 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70683 ,  H01L22/00 ,  H01L22/12 ,  H01L23/544

Abstract: Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure. Alternatively, the detected scattered radiation may comprise non-zero diffraction orders obtained from diffraction at said the periodic structure which have been disturbed in the near field by the second periodic structure.

公开(公告)号：US20180196357A1

公开(公告)日：2018-07-12

申请号：US15912036

申请日：2018-03-05

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Niels Geypen ,  Hendrik Jan Hidde Smilde ,  Alexander Straaijer ,  Maurits Van Der Schaar ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

公开(公告)号：US20180173105A1

公开(公告)日：2018-06-21

申请号：US15841811

申请日：2017-12-14

Applicant: ASML Netherlands B.V.

Inventor： Patrick Warnaar ,  Maurits Van Der Schaar ,  Grzegorz Grzela ,  Erik Johan Koop ,  Victor Emanuel Calado ,  Si-Han Zeng

IPC: G03F7/20 ,  G01N21/47

Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R

公开(公告)号：US09331022B2

公开(公告)日：2016-05-03

申请号：US14261879

申请日：2014-04-25

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Patrick Warnaar ,  Kaustuve Bhattacharyya ,  Hendrik Jan Hidde Smilde ,  Michael Kubis

IPC: H01L23/58 ,  G03F9/00 ,  H01L23/544 ,  G03F7/20

CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品功能和计量目标。 测量目标包括大目标和小目标，用于测量覆盖。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线范围内，而小目标则分布在产品区域内。