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公开(公告)号：US09846368B2
公开(公告)日：2017-12-19
申请号：US13940796
申请日：2013-07-12
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70191 , G03F7/70291 , G03F7/70433 , G03F7/70508
Abstract: An apparatus and method are used to form patterns on a substrate. The apparatus comprises a projection system, a patterning device, a low-pass filter, and a data manipulation device. The projection system projects a beam of radiation onto the substrate as an array of sub-beams. The patterning device modulates the sub-beams to substantially produce a requested dose pattern on the substrate. The low-pass filter operates on pattern data derived from the requested dose pattern in order to form a frequency-clipped target dose pattern that comprises only spatial frequency components below a selected threshold frequency. The data manipulation device produces a control signal comprising spot exposure intensities to be produced by the patterning device, based on a direct algebraic least-squares fit of the spot exposure intensities to the frequency-clipped target dose pattern. In various examples, filters can also be used.
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公开(公告)号：US09778025B2
公开(公告)日：2017-10-03
申请号：US14421434
申请日：2013-07-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Erik Willem Bogaart , Patricius Aloysius Jacobus Tinnemans , Arie Jeffrey Den Boef
IPC: G01B11/00 , G03B27/32 , G03B27/54 , G03B27/74 , G01B11/14 , G03F7/20 , G03F9/00 , G01B9/02 , G01B11/27
CPC classification number: G01B11/14 , G01B9/02 , G01B11/27 , G03F7/70058 , G03F7/70625 , G03F7/70633 , G03F9/7069 , G03F9/7088
Abstract: A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of an alignment target comprising a periodic structure. An illumination optical system for focusing radiation into a spot on said structure. An asymmetry detection optical system receives a share of positive and negative orders of radiation diffracted by the periodic structure, and forms first and second images of said spot on first and second detectors respectively, wherein said negative order radiation is used to form the first image and said positive order radiation is used to form the second image. A processor for processing together signals from said first and second detectors representing intensities of said positive and negative orders to produce a measurement of asymmetry in the periodic structure. The asymmetry measurement can be used to improve accuracy of the position read by the alignment sensor.
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公开(公告)号：US09696636B2
公开(公告)日：2017-07-04
申请号：US14350327
申请日：2012-11-06
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70558 , G03F7/70191 , G03F7/70275 , G03F7/70291 , G03F7/70308 , G03F7/70391 , G03F7/705 , G03F7/70508 , G03F7/70525 , G03F9/7026
Abstract: The invention relates to intensity values for a plurality of beams used to irradiate a plurality of locations on a target are determined with reference to the position and/or rotation of the locations. Also provided is an associated lithographic or exposure apparatus, an associated device manufacturing method and an associated computer program.
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公开(公告)号：US09633427B2
公开(公告)日：2017-04-25
申请号：US14839325
申请日：2015-08-28
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G06T7/0004 , G03F7/705 , G03F7/70591 , G03F7/70633 , G06T7/11 , G06T2207/10061 , G06T2207/20224 , G06T2207/30148
Abstract: A property of a target structure is measured based on intensity of an image of the target. The method includes (a) obtaining an image of the target structure; (b) defining (1204) a plurality of candidate regions of interest, each candidate region of interest comprising a plurality of pixels in the image; (c) defining (1208, 1216) an optimization metric value for the candidate regions of interest based at least partly on signal values of pixels within the region of interest; (d) defining (1208, 1216) a target signal function which defines a contribution of each pixel in the image to a target signal value. The contribution of each pixel depends on (i) which candidate regions of interest contain that pixel and (ii) optimization metric values of those candidate regions of interest.
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35.发明申请POSITION MEASURING APPARATUS, POSITION MEASURING METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 有权位置测量装置，位置测量方法，平面设备和装置制造方法公开(公告)号：US20150219438A1
公开(公告)日：2015-08-06
申请号：US14427287
申请日：2013-09-20
Applicant: ASML Netherlands B.V. , ASML Holding N.V.
Inventor： Arie Jeffrey Den Boef , Justin Lloyd Kreuzer , Simon Gijsbert Josephus Mathijssen , Gerrit Johannes Nijmeijer , J. Christian Swindal , Patricius Aloysius Jacobus Tinnemans , Richard Johannes Franciscus Van Haren
CPC classification number: G01B11/002 , G03F7/70775 , G03F9/7003 , G03F9/7049 , G03F9/7088 , H01L22/12
Abstract: An apparatus to measure the position of a mark, the apparatus including an objective lens to direct radiation on a mark using radiation supplied by an illumination arrangement; an optical arrangement to receive radiation diffracted and specularly reflected by the mark, wherein the optical arrangement is configured to provide a first image and a second image, the first image being formed by coherently adding specularly reflected radiation and positive diffraction order radiation and the second image being formed by coherently adding specularly reflected radiation and negative diffraction order radiation; and a detection arrangement to detect variation in an intensity of radiation of the first and second images and to calculate a position of the mark in a direction of measurement therefrom.
Abstract translation: 一种用于测量标记位置的装置，该装置包括使用由照明装置提供的辐射将辐射引导到标记上的物镜; 接收由标记衍射并被镜面反射的辐射的光学装置，其中所述光学装置被配置为提供第一图像和第二图像，所述第一图像通过相干地添加镜面反射辐射和正衍射级辐射而形成，并且所述第二图像 通过相干地加入镜面反射辐射和负衍射级辐射形成; 以及检测装置，用于检测第一和第二图像的辐射强度的变化，并计算标记在测量方向上的位置。
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Patent Agency Ranking
36.发明申请Lithography Apparatus and System, a Method of Calibrating a Lithography Apparatus, and Device Manufacturing Methods 审中-公开光刻设备和系统，校准光刻设备的方法和设备制造方法公开(公告)号：US20150009481A1
公开(公告)日：2015-01-08
申请号：US14377152
申请日：2013-01-24
Applicant: ASML Netherlands B.V
Inventor： Patricius Aloysius Jacobus Tinnemans
IPC: G03F7/20
CPC classification number: G03F7/70558 , G03F7/70275 , G03F7/70291 , G03F7/70391 , G03F7/704 , G03F7/70516 , G03F7/70525
Abstract: There is disclosed a lithography or exposure apparatus and system, a method of calibrating a lithography or exposure apparatus, and a device manufacturing method. In an embodiment, there is provided an exposure system including a first exposure apparatus and a second exposure apparatus, wherein a data processing device of each of the first and second apparatuses is configured to calculate a control signal using a response function; the combined performance of the programmable patterning device and projection system of each of the first and second apparatuses differs, at least due to manufacturing error; and the response function used by the first apparatus is identical to the response function used by the second apparatus.
Abstract translation: 公开了光刻或曝光装置和系统，校准光刻或曝光装置的方法和装置制造方法。 在一个实施例中，提供一种包括第一曝光装置和第二曝光装置的曝光系统，其中第一和第二装置中的每一个的数据处理装置被配置为使用响应函数来计算控制信号; 至少由于制造误差，第一和第二装置中的可编程图案形成装置和投影系统的组合性能不同， 并且第一装置使用的响应函数与第二装置使用的响应函数相同。
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37.发明授权公开(公告)号：US11650047B2
公开(公告)日：2023-05-16
申请号：US17314469
申请日：2021-05-07
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Vasco Tomas Tenner , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Patrick Warnaar , Grzegorz Grzela , Martin Jacobus Johan Jak
CPC classification number: G01B11/2536 , G02B27/4233 , G02B27/4272 , G03F7/705 , G03F7/7065 , G03F7/7085 , G03F7/70508 , G03F7/70633 , G03H1/0005 , G03H1/0443 , G03H2001/0445
Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
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公开(公告)号：US11029610B2
公开(公告)日：2021-06-08
申请号：US16650520
申请日：2018-09-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van T Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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39.发明授权公开(公告)号：US10816909B2
公开(公告)日：2020-10-27
申请号：US16150879
申请日：2018-10-03
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Nitesh Pandey , Vasco Tomas Tenner , Willem Marie Julia Marcel Coene , Patrick Warnaar
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号：US10585363B2
公开(公告)日：2020-03-10
申请号：US15575069
申请日：2016-03-14
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Arie Jeffrey Den Boef , Alessandro Polo , Patricius Aloysius Jacobus Tinnemans , Adrianus Johannes Hendrikus Schellekens , Elahe Yeganegi Dastgerdi , Willem Marie Julia Marcel Coene , Erik Willem Bogaart , Simon Reinald Huisman
Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.
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