公开(公告)号：US20220245840A1

公开(公告)日：2022-08-04

申请号：US17659467

申请日：2022-04-15

Applicant: ASML Netherlands B.V.

Inventor： Wei FANG ,  Lingling PU

IPC: G06T7/33 ,  G06T7/73 ,  G06T7/13 ,  G06T7/00 ,  H01L21/67 ,  H01L21/66

Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.

公开(公告)号：US20220245780A1

公开(公告)日：2022-08-04

申请号：US17671522

申请日：2022-02-14

Applicant: ASML Netherlands B.V.

Inventor： Wei FANG ,  Zhao-Li ZHANG ,  Jack JAU

IPC: G06T7/00 ,  G06V10/44 ,  G06V10/50 ,  G06V10/46

Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

公开(公告)号：US20220237759A1

公开(公告)日：2022-07-28

申请号：US17567847

申请日：2022-01-03

Applicant: ASML Netherlands B.V.

Inventor： Lingling PU ,  Wei FANG ,  Nan ZHAO ,  Wentian ZHOU ,  Teng WANG ,  Ming XU

IPC: G06T7/00 ,  G06T7/60

Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.

公开(公告)号：US20200333714A1

公开(公告)日：2020-10-22

申请号：US16755127

申请日：2018-10-05

Applicant: ASML Netherlands B.V.

Inventor： Fei WANG ,  Wei FANG ,  Kuo-Shih LIU

IPC: G03F7/20 ,  H01J37/22 ,  G01B15/00 ,  H01J37/28 ,  H01L21/66

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

公开(公告)号：US20200286710A1

公开(公告)日：2020-09-10

申请号：US16652397

申请日：2018-09-25

Applicant: ASML Netherlands B.V.

Inventor： Zhong-wei CHEN ,  Jack JAU ,  Wei FANG ,  Chiyan KUAN

IPC: H01J37/28 ,  H01L21/67

Abstract: Disclosed herein is a method comprising: determining parameters of a recipe of charged particle beam inspection of a region on a sample, based on a second set of characteristics of the sample; inspecting the region using the recipe.

公开(公告)号：US20200227233A1

公开(公告)日：2020-07-16

申请号：US16833463

申请日：2020-03-27

Applicant: ASML Netherlands B.V.

Inventor： Kuo-Shih LIU ,  Xuedong LIU ,  Wei FANG ,  Jack JAU

IPC: H01J37/28 ,  H01J37/26

Abstract: Disclosed herein is a method comprising: generating a plurality of probe spots on a sample by a plurality of beams of charged particles; while scanning the plurality of probe spots across a region on the sample, recording from the plurality of probe spots a plurality of sets of signals respectively representing interactions of the plurality of beams of charged particles and the sample; generating a plurality of images of the region respectively from the plurality of sets of signals; and generating a composite image of the region from the plurality of images.

公开(公告)号：US20200088659A1

公开(公告)日：2020-03-19

申请号：US16574970

申请日：2019-09-18

Applicant: ASML Netherlands B.V.

Inventor： Long MA ,  Chih-Yu JEN ,  Zhonghua DONG ,  Peilei ZHANG ,  Wei FANG ,  Chuan LI

IPC: G01N23/2251 ,  H01J37/28

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.

公开(公告)号：US20190333205A1

公开(公告)日：2019-10-31

申请号：US16479138

申请日：2018-01-18

Applicant: ASML Netherlands B.V.

Inventor： Wei FANG ,  Haili ZHANG ,  Zhichao CHEN ,  Shengcheng JIN

IPC: G06T7/00 ,  G03F7/20 ,  G05B19/406

Abstract: A defect pattern grouping method is disclosed. The defect pattern grouping method comprises obtaining a first polygon that represents a first defect from an image of a sample, comparing the first polygon with a set of one or more representative polygons of a defect-pattern collection, and grouping the first polygon with any one or more representative polygons identified based on the comparison.