公开(公告)号：JPH07142376A

公开(公告)日：1995-06-02

申请号：JP31113493

申请日：1993-11-17

Applicant: CANON KK

Inventor： OGUSHI NOBUAKI ,  AMAMIYA MITSUAKI

IPC: G21K5/02 ,  G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To adjust a position of an aligner to exposure light rapidly. CONSTITUTION:A pin hole mask 9 is mounted instead of a mask of an exposure chamber and irradiated with SR-X ray L1. Ray passed through a pin hole 9a of the pin hole mask 9 is detected by an X-ray strength sensor 7 which moves together with an alignment stage 5. In the process, a position of the X-ray strength sensor 7 is compared to that when an optical axis of the SR-X ray L1 and a z-axis of an exposure chamber are parallel and deflection thereof is obtained. An inclination angle of the z-axis of an exposure chamber is calculated from deflection and a position of the exposure chamber is adjusted on the basis of the calculated inclination angle.

公开(公告)号：JPH06148336A

公开(公告)日：1994-05-27

申请号：JP31951092

申请日：1992-11-04

Applicant: CANON KK

Inventor： MIYAKE AKIRA ,  AMAMIYA MITSUAKI

IPC: G01T1/24 ,  G01T7/00

Abstract: PURPOSE:To enhance the durability of an X-ray intensity measuring apparatus without spoiling its measuring accuracy. CONSTITUTION:An X-ray intensity sensor E1 as an X-ray intensity measuring apparatus is composed of a semiconductor diode 2 housed in an enclosure 1 and of a shielding plate 3 installed at an opening 1a in the enclosure 1. X-rays not indicated in the figure are passed through a pinhole 33 made in the shielding plate 3 and reach the light-receiving face 21 of the semiconductor diode 2. When the following relationship is established among the wavelength lambda or the divergence angle theta of the X-rays, the width (d) of the pinhole 33, the width (a) of the light-receiving face 21 and the separation distance (b) between the pinhole 33 and the light-receiving face 21, an X-ray intensity at the light- receiving face 21 is reduced by the diffraction blur or the half-shade blur of the X-rays: d

公开(公告)号：JPH02311800A

公开(公告)日：1990-12-27

申请号：JP13379589

申请日：1989-05-26

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  KUROSAWA HIROSHI ,  KAWAKAMI EIGO ,  OZAWA KUNITAKA ,  UDA KOJI ,  TERAJIMA SHIGERU ,  UZAWA SHUNICHI

IPC: G21K5/02 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H05H13/04

Abstract: PURPOSE:To enable a highly accurate measurement by measuring an X-ray intensity and a beam intensity in and out an exposure zone simultaneously, after injecting electrons into a synchrotron radiation beam ring, and by controlling an exposure amount thereafter based on an output from measuring devices placed outside the zone. CONSTITUTION:Electrons are fed to a synchrotron radiation beam ring 1 from an injector 10 in a condition that a shutter 7 is closed and an X-ray detector 6 is pushed into an exposure zone to measure an X-ray intensity in the zone. At the same time, a radiation beam intensity is measured by a detector 17. Outputs of the detectors 6 and 7 are sent to a CPU 16 through a signal processing part 11 and 18. Then, the radiation beam intensity is measured again by the detector 17 before commencement of an exposure and the CPU 16 calculates an X-ray intensity Ie during the exposure, based on those radiation beam intensities. After that, from a predetermined exposure amount, an exposure time T=D/(Ie.alpha) (alpha is an X-ray permeability of an X-ray mask 8) is calculated and is set, and positions of the mask 8 and a wafer 9 are coincided, as well. Subsequently, the shutter 7 is opened by an exposure demand from the CPU 16, to commence an exposure. When the exposure time reaches the time T, the shutter 7 is closed.

公开(公告)号：JPH02308518A

公开(公告)日：1990-12-21

申请号：JP13068289

申请日：1989-05-23

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  TERAJIMA SHIGERU ,  UZAWA SHUNICHI

IPC: G03F1/22 ,  G03F1/38 ,  G03F1/44 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To enable calculation of X-ray illuminance corresponding to resist sensitivity by providing a pattern part for exposure illuminance measurement as well as a transfer pattern part to a film being supported by the X-ray mask to a circular support. CONSTITUTION:A circular support substrate of X-ray mask 6 supports a film, and this film is provided with a window 4 for exposure intensiveness measurement, where a pattern for exposure illuminance measurement exists, in addition to an exposure area, where a transfer pattern exists, and the window 4 is provided with a part 2 where resist 7 is applied and a part 1 where it is not applied. Both parts 1 and 2 are scanned vertically, and the illuminance of X-ray corresponding to resist sensitively can be measured with an X-ray detector, and from the measurement results the exposure time of X-rays through an concave lens is calculated. According to this calculation results, a shutter is controlled, whereby X-ray exposure of each part of a wafer is done uniformly.

公开(公告)号：JPH0277627A

公开(公告)日：1990-03-16

申请号：JP22838988

申请日：1988-09-14

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  TERAJIMA SHIGERU ,  SHIMODA ISAMU ,  UZAWA SHUNICHI ,  KARIYA TAKUO

IPC: G01J1/02 ,  G01T1/29 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To measure the exposure distribution on the surface of a wafer within a short time with high accuracy by detecting the difference between the intensity of the light transmitting through the first filter and that of the light transmitting through the second filter. CONSTITUTION:A stage 11 is moved so that an X-ray detector 4 comes to a predetermined exposure position so set the first filter 1 above the detector 4 and an X-ray mirror 10 is subsequently shaken so that X-rays 8 pass above the detector 4 and the intensity of X-rays 8 is measured through the filter 1 to set the output thereof to I1. Next, a filter holder 3 is rotated by a holder driving part 5 so that the second filter 2 is positioned above the detector 4 and the intensity of X-rays is measured through the filter 2 to set the output thereof to I2. Then, the difference between I1, I2 is calculated to be set to the X-ray intensity data at that position. Next, the stage 11 is moved and this process is successively repeated to calculate X-ray intensity data at all of exposure positions.

公开(公告)号：JPH0272612A

公开(公告)日：1990-03-12

申请号：JP22348388

申请日：1988-09-08

Applicant: CANON KK

Inventor： TERAJIMA SHIGERU ,  AMAMIYA MITSUAKI ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To enable high measurement accuracy by installing a semiconductor sensor behind an exposure shutter, and opening or closing this shutter during measurement and synchronizing it with the opening and closing of this shutter so as to obtain the output of a semiconductor sensor to calculate the illuminance of the exposing light. CONSTITUTION:When measuring the illuminance of X-rays, first a stage 107 is shifted to the outside of the opening of an aperture 107 so that a wafer 108 on the stage 107 may not be irradiated with X-rays. Next, when a shutter 101 is moved right and left at high speed, pulse currents are obtained from a sensor 103, and AC component can be obtained by synchronizing it with the driving period of the shutter 101 at a signal processing part 112, and the fluctuating component of the dark current is canceled and accurate X-rays intensity can be measured. Hereby, exposure illuminance can be measured in high accuracy.

公开(公告)号：JPH01282818A

公开(公告)日：1989-11-14

申请号：JP11145688

申请日：1988-05-10

Applicant: CANON KK

Inventor： HARA SHINICHI ,  AMAMIYA MITSUAKI

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To reduce the deterioration in resolution and the accuracy of superposition due to the deformation of a mask substrate, and to improve resolution and the accuracy of superposition by applying voltage between the mask substrate and a body to be exposed on X-ray exposure. CONSTITUTION:Voltage is applied between a mask substrate 3 and a wafer 6 by a high-frequency AC power 9, and the amplitude of currents flowing through the circuit is measured by an ammeter 10. The amplitude of currents flowing through the circuit is represented by ComegaV0 when high-frequency AC voltage is represented by V0.sin(omegat) and electrostatic capacitance between the substrate 3 and the wafer 6 by C, and the electrostatic capacitance is determined because omega and V0 are known previously when the amplitude is measured by the ammeter 10. The change of electrostatic capacitance is detected, voltage V1 where charges are brought to zero is applied on the basis of the value of the detection, and electrostatic capacitance is kept constant at all times. Consequently, strain is not generated by attraction force by the presence of charges in the substrate 3. Accordingly, resolution and the accuracy of superposition are improved.

公开(公告)号：JPH01244461A

公开(公告)日：1989-09-28

申请号：JP6975888

申请日：1988-03-25

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  UZAWA SHUNICHI

IPC: G03F1/00 ,  G03F1/72 ,  G03F1/74 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To make a mask correcting work more efficient and, at the same time, to simplify a constitution and to reduce the cost of the title device by giving both of a faulty mask section detecting and correcting functions to one device. CONSTITUTION:An electron beam 6 is projected on a mask 4 composed of a mask pattern 3 and photosensitive layer 5 formed on a mask substrate 2 after the beam 6 is converged and deflected. Then secondary electrons produced by the projection of the electron beam 6 are detected by means of secondary beam detector 7. Thereafter, a picture is drawn so as to correct a faulty part on the layer 5 by using the electron beam 6 based on the data stored in a reference pattern data holding circuit 13. After the layer 5 on which the picture is drawn is developed, the picture is corrected by etching, plating, lift-off, etc. At the time of the picture drawing, the exposure quantity is increased by increasing the quantity of the electron beam current, making the scanning speed slower, changing the acceleration voltage, etc.

公开(公告)号：JPS63239943A

公开(公告)日：1988-10-05

申请号：JP7170987

申请日：1987-03-27

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To perform exposure with pseudo-parallel X rays having high output power, by reflecting the X rays, which are generated in a thin tube type plasma X-ray source with a reflecting mirror having a quadratic surface, and performing exposure with the X rays, which are made to be the pseudo-parallel state through solar slits. CONSTITUTION:Plasma 5 is generated in a fine tube shaped space 2 by creeping discharge along the surface of the wall constituting the thin tube shaped space 2. Thus X rays 7 are generated in a thin tube type X-ray generating means OR. A refrecting mirror 26 has a quadratic surface and is provided so that the focal point is positioned at a tip part P of said thin tube shaped space 2. The X rays, which are generated in the X-ray generating means OR and reflected with the reflecting mirror 26, are made to be a pseudo-parallel state through solar slits 20. The X rays, which are made to be the pseudo-parallel state through the solar slits 20, are projected on a pattern of an original sheet 22 and the image of the pattern 23 is transferred to a light sensitive body 24 on a substrate 25. For example, the fine tube shaped space 2 is formed by surrounding a plurality of insulators 8. The surface of the insulator 8 facing the space is covered with a dielectric sheet 9.

公开(公告)号：JPS63168944A

公开(公告)日：1988-07-12

申请号：JP22787

申请日：1987-01-06

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: H01J35/22 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To extend the life of this device by forming the wall face of a capillary with a dielectric substance and drawing out the wall face in response to the consumption of the wall face. CONSTITUTION:When a capacitor Cd is charged and the sufficiently large voltage is applied to an insulator 8, the dielectric substance 9 facing a capillary 2 is evaporated by the creeping discharge of the capillary 2 to generate plasma 5. In this case, when an electron beam is radiated from a cathode 6 to the plasma 5, the temperature of the plasma 5 rises, the plasma density is increased, and X-rays 7 are generated. Part of the surface of the dielectric substance 9 facing the capillary 2 generates plasma by the creeping discharge, thus the dielectric substance is reduced as much. Therefore, the dielectric substance 9 is moved toward the center of the capillary 2 as much as the quantity generating plasma. Accordingly, the consumption of the dielectric substance resulting from the generation of plasma can be compensated by the drawing out of the dielectric substance.