公开(公告)号：ES2118147T3

公开(公告)日：1998-09-16

申请号：ES93101759

申请日：1993-02-04

Applicant: CANON KK

Inventor： TOYAMA NOBORU ,  NAKAGAWA KATSUMI

IPC: B60R16/04 ,  B64G1/44 ,  E04D13/18 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/048 ,  H01L31/052 ,  H01L31/058 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01M10/46

Abstract: A photovoltaic device comprises a metal with a smooth surface; a transparent layer formed on the smooth surface; and a photoelectric conversion layer formed on the transparent layer. The transparent layer has an irregular surface at a side opposite to the smooth surface.

公开(公告)号：AU4926897A

公开(公告)日：1998-07-02

申请号：AU4926897

申请日：1997-12-24

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  YONEHARA TAKAO ,  NISHIDA SHOJI ,  SAKAGUCHI KIYOFUMI

IPC: C30B19/12 ,  H01L21/20 ,  H01L21/208 ,  H01L21/3063 ,  H01L21/336 ,  H01L21/762 ,  H01L29/786 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/18 ,  H01L33/00 ,  H01L21/301

Abstract: To accomplish both of higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

公开(公告)号：AT166184T

公开(公告)日：1998-05-15

申请号：AT93101759

申请日：1993-02-04

Applicant: CANON KK

Inventor： TOYAMA NOBORU ,  NAKAGAWA KATSUMI

IPC: B60R16/04 ,  B64G1/44 ,  E04D13/18 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/048 ,  H01L31/052 ,  H01L31/058 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01M10/46

Abstract: A photovoltaic device comprises a metal with a smooth surface; a transparent layer formed on the smooth surface; and a photoelectric conversion layer formed on the transparent layer. The transparent layer has an irregular surface at a side opposite to the smooth surface.

公开(公告)号：DE3855090D1

公开(公告)日：1996-04-18

申请号：DE3855090

申请日：1988-08-31

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  KANAI MASAHIRO ,  ISHIHARA SHUNICHI ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA ,  MURAKAMI TSUTOMU

IPC: H01L31/0296 ,  H01L31/077 ,  H01L31/18 ,  H01L31/075 ,  H01L31/036 ,  H01L31/20

Abstract: An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe1-xTex:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7 in terms of number of atoms. The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not cause any undesirable light-induced fatigue even upon continuous use for a long period of time.

公开(公告)号：AU662360B2

公开(公告)日：1995-08-31

申请号：AU2723692

申请日：1992-10-21

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  TOYAMA NOBORU

IPC: H01L31/0224 ,  H01L31/0392 ,  H01L31/052 ,  H01L31/056 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01L31/02

公开(公告)号：FR2568077B1

公开(公告)日：1994-08-12

申请号：FR8510881

申请日：1985-07-16

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  KOMATSU TOSHIUYKI ,  SEITOH SHINICHI ,  HATANAKA KATSUNORI

IPC: H04N1/40

Abstract: An image readout apparatus includes a plurality of photoelectric conversion elements, storage devices provided for each of the photoelectric conversion elements for storing each output signal from the photoelectric conversion elements, and discharge switches provided each in parallel with each of the storage devices. In the image readout apparatus, the photoelectric conversion elements and discharge switches are respectively divided into a predetermined number of blocks and the signal transference is performed collectively for each block, thus enabling a high-speed and reliable operation.

公开(公告)号：CA1320106C

公开(公告)日：1993-07-13

申请号：CA573473

申请日：1988-07-29

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  ISHIHARA SHUNICHI ,  KANAI MASAHIRO ,  MURAKAMI TSUTOMU ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA

IPC: C30B33/00 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G02F1/03 ,  G02F1/05 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/068 ,  H01L31/18 ,  H01L21/36

Abstract: An improved functional ZnSe1-xTex:H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe1-xTex:H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way. These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate. These films are suited for the preparation of a high functional device such as a photovoltatic element.

公开(公告)号：DE4134261A1

公开(公告)日：1992-05-07

申请号：DE4134261

申请日：1991-10-16

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  YONEHARA TAKAO

IPC: H01L31/04 ,  C30B15/00 ,  C30B15/34 ,  C30B19/06 ,  H01L21/208 ,  H01L31/0392 ,  H01L31/18

Abstract: Devices are formed by using a carrier in the form of a tape which is coated with an insulating layer in which windows have been formed. The semiconductor material to be deposited is dissolved and the tape passed along the surface of the soln. in such a way that single crystalline regions grow on the tape. The semiconductor material pref. comprises Si, Ge, Ga, As, In or P, and the solvent pref. comprises In, Sb, Zn, Sn, Ga or B. The tape material includes pref. Al, stainless steel, Cu and/or Ni. USE/ADVANTAGE - The process is fast, e.g. can deposit a succession of layers, forming an active structure, in one min. The active semiconductor consists of single crystalline regions which gives the devices a high efficiency, e.g. up to 13.7%. The formation temp. is low, allowing flexible materials to be used for the tape, which alllows serial connection of cells to be made easily and with high yield and allows a continuous process to be used. The tape material can be used as one of the electrodes of the cell. As a result of the above features, the cell cost has been significantly reduced.

公开(公告)号：AU622622B2

公开(公告)日：1992-04-16

申请号：AU2026988

申请日：1988-08-01

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  ISHIHARA SHUNICHI ,  KANAI MASAHIRO ,  MURAKAMI TSUTOMU ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA

IPC: C30B33/00 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G02F1/03 ,  G02F1/05 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/068 ,  H01L31/18 ,  H01L21/363 ,  H01L31/0272

Abstract: A functional ZnSe1-xTex:H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe1-xTex:H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way. These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate. These films are suited for the preparation of a high functional device such as a photovoltaic element.

公开(公告)号：DE3770285D1

公开(公告)日：1991-07-04

申请号：DE3770285

申请日：1987-01-29

Applicant: CANON KK

Inventor： HATANAKA KATSUNORI ,  UZAWA SHUNICHI ,  NAKAGAWA KATSUMI ,  KOMATSU TOSHIYUKI

IPC: H04N1/40 ,  H04N3/15

Abstract: A photoelectric conversion apparatus in which a charge accumulated on a capacitor provided for each of a plurality of photoelectric conversion elements is matrix-transferred, and the matrix-transferred signal is serially output by switch array means.A matrix wiring unit for the matrix transfer is arranged on the side opposite to the photoelectric conversion elements so as not to cross signal lines extending from the capacitors.The switch array means comprises first switch means for sequentially transferring the matrix-­transferred signal, first readout means for reading out the input signal transferred by the first switch means, second switch means which is arranged in correspondence with the first switch means and is operated synchronously with the corresponding first switch means, second readout means for reading out an output from the second switch means, and differential amplifier means for receiving the outputs from the first and second readout means and outputting a signal corresponding a difference therebetween.