公开(公告)号：EP3323145A1

公开(公告)日：2018-05-23

申请号：EP15897981.5

申请日：2015-07-14

Applicant: Goertek Inc.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L21/70 ,  H01L33/00

CPC classification number: H01L24/97 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/81005 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2924/12041 ,  H01L2933/0066

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate; irradiating the original substrate with laser from the original substrate side to lift-off the micro-LEDs from the original substrate; bring the micro-LEDs into contact with pads preset on a receiving substrate through a contactless action.

公开(公告)号：EP3262694A1

公开(公告)日：2018-01-03

申请号：EP15906439.3

申请日：2015-10-20

Applicant: Goertek. Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/08

CPC classification number: H01L25/0753 ,  B81C3/001 ,  H01L21/673 ,  H01L21/67781 ,  H01L33/0079 ,  H01L2224/95

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

公开(公告)号：EP3257072A1

公开(公告)日：2017-12-20

申请号：EP15903360.4

申请日：2015-09-09

Applicant: Goertek Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L21/677 ,  H01L33/62

CPC classification number: H01L33/0095 ,  H01L24/03 ,  H01L25/0753 ,  H01L25/13 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/83 ,  H01L2224/98 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2933/0066

Abstract: The present invention discloses a repairing method, manufacturing method, device and electronics apparatus of micro-LED. The method for repairing a micro-LED comprises: bringing a known-good micro-LED on a conductive pick-up head into contact with a first pad on an defective position of a receiving substrate, wherein the conductive pick-up head and the known-good micro-LED are bonded via a conductive adhesive; locally joule heating a first bonding layer through the conductive pick-up head, to melt the first bonding layer, wherein the first bonding layer is provided between the known-good micro-LED and the first pad; and lifting up the conductive pick-up head after the first bonding layer is cooled, leaving the known-good micro-LED on the receiving substrate.

公开(公告)号：EP3218938A1

公开(公告)日：2017-09-20

申请号：EP15901410.9

申请日：2015-08-18

Applicant: Goertek. Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/00 ,  H01L25/075 ,  H01L23/00

Abstract: A repairing method, manufacturing method, device and electronic apparatus of micro-LED are disclosed. The method for repairing micro-LED defects comprises: obtaining a micro-LED defect pattern on a receiving substrate; forming micro-LEDs (703b) corresponding to the defect pattern on a laser-transparent repair carrier substrate (707); aligning the micro-LEDs (703b) on the repair carrier substrate (707) with defect positions on the receiving substrate, and bringing the micro-LEDs (703b) into contact with pads at the defect positions; and irradiating the repair carrier substrate with a laser from the repair carrier substrate side, to lift-off the micro-LEDs from the repair carrier substrate (707).

Abstract translation: 公开了一种微型LED的修复方法，制造方法，装置和电子设备。 所述修复微LED缺陷的方法包括：获取接收基板上的微LED缺陷图案; 在激光透明修复载体衬底（707）上形成对应于缺陷图案的微型LED（703b）; 使修复载体基板（707）上的微型LED（703b）与接收基板上的缺陷位置对准，并使微型LED（703b）与缺陷位置处的焊盘接触; 以及用修复载体衬底侧的激光照射修复载体衬底，以从修复载体衬底（707）剥离微型LED。

公开(公告)号：EP3207568A1

公开(公告)日：2017-08-23

申请号：EP15886930.5

申请日：2015-04-01

Applicant: Goertek Inc.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L25/16

CPC classification number: B81C1/00896 ,  B81C2201/0194 ,  B81C2203/01 ,  B81C2203/0127 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/11312 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81005 ,  H01L2224/97 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

Abstract translation: MEMS的传输方法，制造方法，装置和电子设备。 该MEMS传输方法包括：在激光透明载体的第一表面上沉积激光吸收层; 在激光吸收层上形成MEMS结构; 将MEMS结构附接到接收器; 并且从载体侧执行激光剥离以去除载体。 可以以简单，低成本的方式实现高质量MEMS结构的转移。