公开(公告)号：JP2006184355A

公开(公告)日：2006-07-13

申请号：JP2004375320

申请日：2004-12-27

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU

IPC: G03F1/32 ,  G03F1/54 ,  H01L21/027

CPC classification number: G03F1/32

Abstract: PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank and a halftone phase shift mask suppressing production of ammonium ions and having superior chemical resistance.
SOLUTION: The halftone phase shift mask blank 10 has a semi-transparent film 2, having a predetermined transmittance at the wavelength of exposure light and essentially comprising nitrogen, metals and silicon, formed on a transparent substrate 1, wherein the surface layer of the semi-transparent film 2 has ≥35 atm% oxygen content and ≤5 atm% metal content, the surface layer of the semi-transparent film 2 has ≤45 atm% nitrogen content, and the surface layer has 1 to 5 nm film thickness. The semi-transparent film 2 is patterned, to obtain the halftone phase shift mask 20 having a semi-transparent portion 2a formed in the film.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供半色调相移掩模空白和抑制铵离子生成并具有优异的耐化学性的半色调相移掩模。 解决方案：半色调相移掩模坯料10具有半透明膜2，其在曝光光的波长处具有预定的透射率，并且基本上包含形成在透明基板1上的氮，金属和硅，其中表面层 半透明膜2具有≥35atm％的氧含量和≤5atm％的金属含量，半透明膜2的表面层的氮含量≤45atm％，表面层具有1〜5nm的膜 厚度。 对半透明膜2进行图案化，以获得在膜中形成半透明部分2a的半色调相移掩模20。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004144900A

公开(公告)日：2004-05-20

申请号：JP2002308345

申请日：2002-10-23

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU ,  SUZUKI TOSHIYUKI ,  ISHIHARA SHIGENORI

IPC: C23C14/06 ,  C23C14/34 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F9/00 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F1/32 ,  C23C14/0641 ,  G03F1/68

Abstract: PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a halftone phase shift mask blank with uniform quality and little scatter in the optical characteristics in mass-production.
SOLUTION: The method for manufacturing a halftone phase shift mask blank having a phase shift film containing at least one layer of a halftone film on a transparent substrate includes a process of forming the halftone film on the transparent substrate by reactive sputtering in an atmosphere containing a reactive gas by using a target containing metal and silicon. The process of forming the halftone film by the reactive sputtering is carried out under the condition of the flow rate of the reactive gas selected from a region where the discharge characteristics are stable against changes in the flow rate of the reactive gas, and by using a target with a selected composition ratio of the metal and silicon so as to obtain desired optical characteristics of the halftone film.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002090977A

公开(公告)日：2002-03-27

申请号：JP2000277260

申请日：2000-09-12

Applicant: HOYA CORP

Inventor： NOZAWA JUN ,  MITSUI MASARU ,  OTSUKA HITOSHI ,  MITSUI HIDEAKI

IPC: C23C14/34 ,  C23C14/56 ,  G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F1/50 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing apparatus, manufacturing method, etc., capable of manufacturing phase shift mask blanks of

公开(公告)号：JP2000181049A

公开(公告)日：2000-06-30

申请号：JP36153198

申请日：1998-12-18

Applicant: HOYA CORP

Inventor： MITSUI MASARU

IPC: H01L21/027 ,  G03F1/32 ,  G03F1/48 ,  G03F1/68 ,  G03F1/08 ,  G03F1/14

Abstract: PROBLEM TO BE SOLVED: To obtain a halftone type phase shift mask and a halftone type phase shift mask blank, capable of high precision patterning and having high acid resistance and reliability. SOLUTION: This phase shift mask blank has a transparent substrate 10, a halftone material film 11 laminated on the substrate 10, and a metal film 12 laminated on the film 11. The amount of an etching rate increasing component and/or an etching rate decreasing component in the metal film 12 is stepwise and/or continuously increased and/or decreased from the surface side toward the substrate 10 side, so that the etching rate of the film 12 is stepwise and/or continuously increased from the surface side toward the substrate 10 side.

公开(公告)号：JPH1073915A

公开(公告)日：1998-03-17

申请号：JP21624897

申请日：1997-08-11

Applicant: HOYA CORP

Inventor： MITSUI MASARU

IPC: G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask and a phase shift mask blank as its material, to be manufactured while restraining occurrence of a micro defect in a comparatively simple process and capable of pattern-transfer at a high resolution. SOLUTION: This phase shift mask can favourably hold contrast of a boundary part of a light transmitting part 4 and a light semi-transmitting part 2 by making light passing in the neighbourhood of the boundary part negate each other by constituting a mask pattern to be formed on a transparent base plate 1 of the light transmitting part 4 to transmit intense light to substantially contribute to exposure and the light semi-transmitting part 2 to transmit intense light not to substantially contribute to exposure and making a phase of light passing the semi-transmitting part 2 by shifting the phase of light passing this light semi-transmitting part 2 and a phase of light passing the light transmitting part 2 different from each other. The light semi-transmitting part 2 is constituted of a thin film made of a substance containing oxygen, nitrogen, metal and silicon formed on the transparent base plate 1 by reactive sputtering in a mixed gas atomosphere of Ar and N2 O or NO by using a mixed target of metal and silicon.

公开(公告)号：JPH1073913A

公开(公告)日：1998-03-17

申请号：JP9804697

申请日：1997-03-31

Applicant: HOYA CORP

Inventor： MITSUI MASARU

IPC: C01B33/00 ,  C01B33/06 ,  C23C14/34 ,  G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask having a light semi-transmitting part excellent in film characteristics such as acidic resistance and transmissivity by containing silicon and a metal in a sputter target, and setting the composition of the sputter so as to contain silicon in a quantity larger than a stoichiometrically stable composition. SOLUTION: This sputter target contains silicon and a metal, and the composition of the sputter target is set so as to contain silicon in a quantity larger than a stoichiometrically stable composition. Thus, the extinction coefficient can be relatively easily minimized. A light semi-transmitting film 3a formed of a thin film of nitrided molybdenum and silicon is formed on the surface of a transparent base board 1 by use of this sputter target to provide a phase shift mask blank for KrF excimer laser, and the light semi-transmitting film 3a is patterned to provide a phase shift mask. The film formed by sputtering by use of such a sputter target is a thin film suitable as a light semi- transmitting part ensured in high transmissivity and acidic resistance.

公开(公告)号：JPH09179288A

公开(公告)日：1997-07-11

申请号：JP34132295

申请日：1995-12-27

Applicant: HOYA CORP

Inventor： MITSUI MASARU

IPC: G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To make it possible to easily control the transmittance and thickness of an MoSi film by the gaseous component flow rate of a gaseous mixture atmosphere at the time of forming a molybdenum silicide film which is a light translucent film on a transparent substrate. SOLUTION: The light translucent film of the halftone phase shift mask blank is composed of a thin film consisting of oxygen, nitrogen, silicon and metal as essential constituting elements. At the time of forming this thin film, the thin film is formed on the transparent substrate by a reactive sputtering method using a target mixture composed of molybdenum and silicon. At this gime, a gaseous mixture composed of gaseous argon and nitrous oxide is passed as the atmosphere gas and the flow rate of this gaseous nitrous oxide is suppressed to a range of

公开(公告)号：JPH0434436A

公开(公告)日：1992-02-05

申请号：JP14048890

申请日：1990-05-30

Applicant: HOYA CORP

Inventor： MITSUI MASARU ,  IIDA KAZUO

IPC: G03F1/46 ,  G03F1/50 ,  H01L21/027

Abstract: PURPOSE:To prevent the annihilation of the upper layer parts of antireflection film patterns by forming an antireflection film of a chromium/molybdenum alloy contg. oxygen and/or nitrogen. CONSTITUTION:The antireflection film 4 of the photomask blank having a light transparent substrate 2 and a light shielding film 3 and antireflection film 4 formed successively on the main surface of this light transparent substrate 2 is formed of the chromium/molybdenum alloy contg. the oxygen and/or nitrogen. The photomask is formed by selectively etching the light shielding film and the reflecting film of this photomask blank. The antireflection film 4 and antireflection film patterns which are the substrate for resist patterns are constituted of the compsn. having high plasma resistance in such a manner, by which the annihilation of the upper layer part of the antireflection film patters is prevented and a sufficient antireflection effect is exhibited.

公开(公告)号：JPH01251034A

公开(公告)日：1989-10-06

申请号：JP7983488

申请日：1988-03-31

Applicant: HOYA CORP

Inventor： MITSUI MASARU

IPC: G03F1/84 ,  H01L21/027 ,  H01L21/30 ,  H01L21/66

Abstract: PURPOSE:To obtain a base plate for defect test permitting exact tests easily by constituting at least the surfacial part of a thin film formed on the surface of a light transmissive base plate of Al contg. nitrogen and oxygen, thus reproducing a fine pattern which is an object of the defect test, on the thin film. CONSTITUTION:A thin film 2 consisting of Al contg. nitrogen and oxygen is formed on the surface of a light transmissive base plate 1 for defect test. Using said thin film as a test piece, and a fine pattern 3 corresponding to a fine pattern of a master mask which is an object of the defect test, is formed on the thin film 2. By carrying out a defect test in the fine pattern 3 formed on the test piece, presence of defect in the fine pattern of the master mask is also tested. Thus, a defect test is performed exactly and easily.

公开(公告)号：JP2012155334A

公开(公告)日：2012-08-16

申请号：JP2012088097

申请日：2012-04-09

Applicant: Hoya Corp ,  Hoya Electronics Malaysia Sdn Bhd ,  Hoya株式会社 ,  ホーヤ エレクトロニクス マレーシア センドリアン ベルハッドHoya Electronics Malaysia Sendirian Berhad

Inventor： MITSUI MASARU ,  SANO MICHIAKI

IPC: G03F1/50 ,  G03F1/54 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask which are suitable to processes (a drawing method and a resist coating method) of a large-sized mask for FPD and different conditions (the kind of resist and resist film thickness).SOLUTION: There is provided a mask blank for FPD device manufacture which at least has a light shield film on a translucent substrate and is used to form a resist film for laser drawing on the light shielding film by a slit coater device. The light shielding film is controlled to have a width of variation in film surface reflection factor within a range of less than 2% in a wavelength band of 350-450 nm including a laser drawing wavelength. The slit coater device forms the resist film by moving a nozzle, having a resist liquid supply port extending in one direction, relatively to a top surface of the light shielding film in a direction crossing the one direction while discharging the resist liquid from the nozzle.

Abstract translation: 要解决的问题：提供适合用于FPD的大尺寸掩模和不同条件（抗蚀剂和抗蚀剂膜的种类）的处理（拉伸法和抗蚀剂涂布法）的掩模毛坯和光掩模 厚度）。 解决方案：提供了一种用于FPD器件制造的掩模板，其至少在透光性基板上具有遮光膜，并且用于通过狭缝涂布器装置形成用于激光拉制在遮光膜上的抗蚀剂膜。 控制光屏蔽膜在包括激光拉伸波长的350-450nm的波长带中具有在小于2％的范围内的膜表面反射系数的变化的宽度。 狭缝涂布装置通过使沿着一个方向延伸的抗蚀剂液体供给口相对于遮光膜的上表面沿着与该一个方向交叉的方向移动而形成抗蚀剂膜，同时从喷嘴排出抗蚀剂液体。 版权所有（C）2012，JPO＆INPIT