公开(公告)号：DE10011054A1

公开(公告)日：2000-09-21

申请号：DE10011054

申请日：2000-03-07

Applicant: IBM

Inventor： CHU JACK OON ,  HAMMOND RICHARD ,  ISMAIL KHALID EZZELDIN ,  KOESTER STEVEN JOHN ,  MOONEY PATRICIA MAY ,  OTT JOHN A

IPC: H01L29/161 ,  H01L21/338 ,  H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L21/335

Abstract: Layer structure arrangement comprises a single crystalline substrate, a first layer of relaxed Si1-xGex (where x = 0.35-0.5), a second layer of Si1-x, a third layer of non-doped silicon, a forth layer of non-doped Si1-x, a fifth layer of germanium, a sixth layer of Si1-wGew (where w = 0.5 to less than 1.0), and a seventh layer of Si1-xGex.