公开(公告)号：JP2000286413A

公开(公告)日：2000-10-13

申请号：JP2000065262

申请日：2000-03-09

Applicant: IBM

Inventor： CHU JACK OON ,  HAMMOND RICHARD ,  ISMAIL KHALID EZZELDIN ,  KOESTER STEVEN JOHN ,  MOONEY PATRICIA MAY ,  OTT JOHN A

IPC: H01L29/161 ,  H01L21/338 ,  H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812

Abstract: PROBLEM TO BE SOLVED: To make applicable the structure of an epitaxial field effect transistor to the intended uses of high-speed low-noise microwave and quasi-millimetric- wave devices, etc., by integrating into the epitaxial field effect transistor a silicon layer, a germanium layer, and silicon-germanium layers which form jointly a modulatorily doped heterostructure. SOLUTION: After forming on a single-crystal semiconductor substrate 11 a buffer layer 12 including a layer 12A, a layer 12B, and a layer 12C, a p-type doped relaxation silicon-germanium layer 13 is formed on the layer 12C of the buffer layer 12. Then, thereon, as a spacer, a non-doped strained silicon layer 14 is grown epitaxially to grow further on the layer 14 epitaxially a non-doped thin relaxation silicon-germanium layer 15. Subsequently, on the layer 15, there are grown epitaxially in succession a germanium layer 16, a silicon-germanium layer 17, and a silicon-germanium cap layer 18 to form the laminated layer of them.

公开(公告)号：DE10011054A1

公开(公告)日：2000-09-21

申请号：DE10011054

申请日：2000-03-07

Applicant: IBM

Inventor： CHU JACK OON ,  HAMMOND RICHARD ,  ISMAIL KHALID EZZELDIN ,  KOESTER STEVEN JOHN ,  MOONEY PATRICIA MAY ,  OTT JOHN A

IPC: H01L29/161 ,  H01L21/338 ,  H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L21/335

Abstract: Layer structure arrangement comprises a single crystalline substrate, a first layer of relaxed Si1-xGex (where x = 0.35-0.5), a second layer of Si1-x, a third layer of non-doped silicon, a forth layer of non-doped Si1-x, a fifth layer of germanium, a sixth layer of Si1-wGew (where w = 0.5 to less than 1.0), and a seventh layer of Si1-xGex.