公开(公告)号：JP2000332248A

公开(公告)日：2000-11-30

申请号：JP13389299

申请日：1999-05-14

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  MIYAMOTO TAKASHI

IPC: H01L29/786 ,  H01L21/336 ,  H01L27/12 ,  H01L29/417 ,  H01L29/45

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film transistor that enables a satisfactory ohmic contact between a source electrode, a drain electrode, and a semiconductor layer. SOLUTION: A first semiconductor layer (n+ a-Si) 6 containing an impurity P is formed on a source electrode 4 and a drain electrode 5, which substantially do not contain oxygen and are made of an MOW alloy. The impurity P contained in the first semiconductor layer is diffused onto an SiO2 substrate 1, the source electrode 4 and the drain electrode 5, subjected to H2 plasma etching, and the first semiconductor layer 6 and regions 8 containing an impurity of the substrate are selectively etched. A second semiconductor a-Si layer 9 is formed on the source electrode 4 and the drain electrode 5, the impurity P contained in the source electrode 4 and the drain electrode 5 is made to diffuse onto the second semiconductor layer, to form ohmic contact layer 11.

公开(公告)号：DE60108834D1

公开(公告)日：2005-03-17

申请号：DE60108834

申请日：2001-11-30

Applicant: IBM

Inventor： COLGAN EVAN G ,  SCHLEUPEN KAI R ,  TSUJIMURA TAKATOSHI

IPC: H01L29/786 ,  G02F1/1362 ,  G02F1/1368

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

公开(公告)号：AT289079T

公开(公告)日：2005-02-15

申请号：AT01310043

申请日：2001-11-30

Applicant: IBM

Inventor： COLGAN EVAN G ,  SCHLEUPEN KAI R ,  TSUJIMURA TAKATOSHI

IPC: H01L29/786 ,  G02F1/1362 ,  G02F1/1368

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

公开(公告)号：CA2358579A1

公开(公告)日：2002-06-05

申请号：CA2358579

申请日：2001-10-05

Applicant: IBM

Inventor： COLGAN EVAN G ,  SCHLEUPEN KAI R ,  TSUJIMURA TAKATOSHI

IPC: H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H01L33/00 ,  H01L49/02 ,  H05B33/12

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole dow n to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.