1.
    发明专利
    未知

    公开(公告)号:DE60108834T2

    公开(公告)日:2006-01-19

    申请号:DE60108834

    申请日:2001-11-30

    Applicant: IBM

    Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

    Driving method and circuit for pixel multiplexing circuits

    公开(公告)号:GB2344448A

    公开(公告)日:2000-06-07

    申请号:GB9925422

    申请日:1999-10-28

    Applicant: IBM

    Abstract: A driving method for multiplexing pixels in active matrix displays in accordance with the present invention includes the steps of providing a plurality of pixels arranged in an array, wherein each pixel includes at least two transistors associated therewith, the transistors disposed in the array of pixels and each pixel including a plurality of control lines for controlling the transistors for turning each pixel on and off and sequencing waveforms on the control lines to provide multiplexing at the pixels in the array. A circuit for addressing pixels in a pixel array in accordance with the present invention includes at least two transistors associated with each pixel, the transistors disposed in the array of pixels. A plurality of control lines associated with each pixel for controlling the transistors of each pixel. At least one gate driver sequences waveforms on the control lines to provide multiplexing at the pixels in the array.

    THIN FILM TRANSISTORS WITH SELF-ALIGNED TRANSPARENT PIXEL ELECTRODE

    公开(公告)号:CA2358579C

    公开(公告)日:2006-08-29

    申请号:CA2358579

    申请日:2001-10-05

    Applicant: IBM

    Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole dow n to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

    4.
    发明专利
    未知

    公开(公告)号:DE60108834D1

    公开(公告)日:2005-03-17

    申请号:DE60108834

    申请日:2001-11-30

    Applicant: IBM

    Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

    5.
    发明专利
    未知

    公开(公告)号:AT289079T

    公开(公告)日:2005-02-15

    申请号:AT01310043

    申请日:2001-11-30

    Applicant: IBM

    Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

    THIN FILM TRANSISTORS WITH SELF-ALIGNED TRANSPARENT PIXEL ELECTRODE

    公开(公告)号:CA2358579A1

    公开(公告)日:2002-06-05

    申请号:CA2358579

    申请日:2001-10-05

    Applicant: IBM

    Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole dow n to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

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