公开(公告)号：DE10149542A1

公开(公告)日：2003-04-17

申请号：DE10149542

申请日：2001-10-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  HANDTMANN MARTIN

IPC: H03H9/00 ,  H03H9/17 ,  H03H9/58 ,  H03H9/15

Abstract: A bulk acoustic wave resonator has a first piezoelectric layer (PL) (106) made from material that is oriented in a first direction and a second PL (108) made from material that is oriented in a second direction opposed to the first direction. A substrate (100) has a first main surface (102) to support a first metal/conductive connector electrode (MCCE) (104) with the first and second PLs. A second MCCE (110) rests on the second PL. An Independent claim is also included for a bulk acoustic wave filter with one or more bulk acoustic resonators.

公开(公告)号：DE10124349A1

公开(公告)日：2002-12-05

申请号：DE10124349

申请日：2001-05-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER

IPC: H03H3/04 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H03H9/25 ,  H03H9/64 ,  H03H3/08

Abstract: A resonator device comprises a piezoelectric resonator (10) with a detuning layer sequence (52), arranged on the piezoelectric resonator (10). The detuning layer sequence (52) comprises at least one first layer (52A) with a high acoustic impedance and a second layer (52B) with a low acoustic impedance.