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公开(公告)号:JP2007006495A
公开(公告)日:2007-01-11
申请号:JP2006172398
申请日:2006-06-22
Applicant: Infineon Technologies Ag , インフィネオン テクノロジーズ アクチエンゲゼルシャフト
Inventor: AIGNER ROBERT , HANDTMANN MARTIN
CPC classification number: H03H9/605 , H03H9/02015 , H03H9/02133
Abstract: PROBLEM TO BE SOLVED: To provide a BAW device capable of decreasing the nonlinear characteristics of a BAW resonator, without having to significantly increase the dimensions of the BAW resonator.
SOLUTION: This BAW device concerns one having a first BAW resonator (72) and a second BAW resonator (74) connected antiparallel with each other, to weaken nonlinear effects in specific harmonic waves.
COPYRIGHT: (C)2007,JPO&INPITAbstract translation: 要解决的问题:提供能够降低BAW谐振器的非线性特性的BAW器件,而不必显着增加BAW谐振器的尺寸。 解决方案:该BAW器件涉及具有彼此反平行连接的第一BAW谐振器(72)和第二BAW谐振器(74)的一个,以削弱特定谐波中的非线性效应。 版权所有(C)2007,JPO&INPIT
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公开(公告)号:JP2007110714A
公开(公告)日:2007-04-26
申请号:JP2006275286
申请日:2006-10-06
Applicant: Infineon Technologies Ag , インフィネオン テクノロジーズ アクチエンゲゼルシャフト
Inventor: AIGNER ROBERT , HANDTMANN MARTIN
CPC classification number: H03H9/706
Abstract: PROBLEM TO BE SOLVED: To provide additional circuity for suppressing an insertion loss of a signal path, preventing electrostatic discharge and securing robustness. SOLUTION: A duplexer for connection with an antenna comprises an antenna port, a transmitting filter comprising bulk acoustic wave (BAW) resonators having a first antenna side impedance coupled with the antenna port, a receiving filter comprising BAW resonators having a second antenna side impedance coupled with the antenna port, and a shunt inductance coupled between the antenna port and ground. The shunt inductance and the first and second antenna side impedances of the transmitting filter and the receiving filter are selected in such a way that the shunt inductance turns the first and second input impedances in a negative direction in a Smith diagram. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题:提供用于抑制信号路径的插入损耗的附加电路,防止静电放电并确保稳健性。 用于与天线连接的双工器包括天线端口,包括具有与天线端口耦合的第一天线侧阻抗的体声波(BAW)谐振器的发射滤波器,包括具有第二天线的BAW谐振器的接收滤波器 与天线端口耦合的侧面阻抗,以及耦合在天线端口和地之间的分流电感。 选择发射滤波器和接收滤波器的并联电感和第一和第二天线侧阻抗,使得并联电感在史密斯图中将负的第一和第二输入阻抗转向负方向。 版权所有(C)2007,JPO&INPIT
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公开(公告)号:DE50202672D1
公开(公告)日:2005-05-04
申请号:DE50202672
申请日:2002-11-22
Applicant: INFINEON TECHNOLOGIES AG
Inventor: AIGNER ROBERT , ELBRECHT LUEDER , HANDTMANN MARTIN , MARKSTEINER STEPHAN , NESSLER WINFRIED , TIMME HANS-JOERG
Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.
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公开(公告)号:DE10234686A1
公开(公告)日:2003-09-11
申请号:DE10234686
申请日:2002-07-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: HANDTMANN MARTIN , TIMME HANS-JOERG , AIGNER ROBERT
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公开(公告)号:DE102005028927A1
公开(公告)日:2006-12-28
申请号:DE102005028927
申请日:2005-06-22
Applicant: INFINEON TECHNOLOGIES AG
Inventor: AIGNER ROBERT , HANDTMANN MARTIN
IPC: H03H9/15
Abstract: The bulk acoustic wave (BAW) apparatus has two BAW resonators (72,74) connected in antiparallel, such that the resonators have same polarization direction. The top electrode (72T) of BAW resonator (72) is electrically connected to the bottom electrode (74B) of BAW resonator (74) and electrical terminal (76) of BAW apparatus. The bottom electrode (72B) of BAW resonator (72) is electrically connected to the top electrode (74T) of BAW resonator (74) and electrical terminal (78) of BAW apparatus. Independent claims are also included for the following: (1) method of reducing non-linear properties within BAW apparatus; and (2) BAW filter.
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公开(公告)号:DE10162580A1
公开(公告)日:2003-07-17
申请号:DE10162580
申请日:2001-12-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor: AIGNER ROBERT , NESSLER WINFRIED , MARKSTEINER STEPHAN , HANDTMANN MARTIN , ELBRECHT LUEDER , TIMME HANS-JOERG
Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.
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公开(公告)号:DE19949611A1
公开(公告)日:2001-06-07
申请号:DE19949611
申请日:1999-10-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor: AIGNER ROBERT , HANDTMANN MARTIN
Abstract: An angular rate sensor includes a ring that is kept floating by electrostatic forces between electrodes without the ring being mechanically or electrically contacted. The ring is divided into segments of differing radial dimensions which cooperate with a multi-phase drive from segmented electrodes to exert a torque on the floating ring which causes the ring to rotate. A control of the position of the ring and a detection of the Coriolis force that occurs are achieved by the voltages applied to the electrodes.
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公开(公告)号:DE102008012834A1
公开(公告)日:2008-09-25
申请号:DE102008012834
申请日:2008-03-06
Applicant: INFINEON TECHNOLOGIES AG
Inventor: FRANOSCH MARTIN , HANDTMANN MARTIN , OPPERMANN KLAUS-GUENTER
Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
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公开(公告)号:DE10162540A1
公开(公告)日:2003-07-10
申请号:DE10162540
申请日:2001-12-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor: FRANOSCH MARTIN , NESSLER WINFRIED , MARKSTEINER STEPHAN , HANDTMANN MARTIN , ELBRECHT LUEDER , TIMME HANS-JOERG
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公开(公告)号:DE10234686B4
公开(公告)日:2008-09-11
申请号:DE10234686
申请日:2002-07-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: HANDTMANN MARTIN , TIMME HANS-JOERG , AIGNER ROBERT
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