公开(公告)号：JP2007209000A

公开(公告)日：2007-08-16

申请号：JP2007041493

申请日：2007-02-21

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

IPC: H03H3/04 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/253 ,  H03H3/02 ,  H03H9/17

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a layer having a locally-adapted or predetermined layer thickness characteristics. SOLUTION: (a) At least one layer (7) is formed on a substrate. (b) A removing shape for the formed layer is determined. (c) Irradiation of the upside of the layer, with at least one ion beam (9), is performed at least once so that the layer (7) is locally etched at the place of the ion beam according to the removal characteristics. As a result, the layer having the locally-adapted or predetermined layer thickness characteristic can be formed. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有局部适应或预定层厚度特性的层的制造方法。 解决方案：（a）在基板上形成至少一层（7）。 （b）确定形成层的去除形状。 （c）至少一个离子束（9）至少进行一次照射该层的上侧，使得根据去除特性在层离子束的位置局部蚀刻层（7）。 结果，可以形成具有局部适应或预定层厚度特性的层。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：WO0209131A2

公开(公告)日：2002-01-31

申请号：PCT/EP0107604

申请日：2001-07-03

Applicant: INFINEON TECHNOLOGIES AG ,  AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L21/28 ,  H01L37/02 ,  H01L41/08 ,  H01L41/09 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H03H9/17 ,  H01G

CPC classification number: H03H9/175 ,  H01L37/02 ,  H01L41/319

Abstract: The sequence of layers has a lower electrode (U), an upper electrode (O) and a piezoelectric or pyroelectric layer (S) which is located between them. An auxiliary layer (H) is located between the lower electrode (U) and said layer (S), said auxiliary layer ensuring that the orientation of the layer (S) is homogenous as it grows during the production process. The auxiliary layer (H) preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.

Abstract translation: 所述层序列具有下部电极（U），上电极（O）和一个插入层（S），其是压电或热电。 下部电极（U）和所述层（S）之间是一个辅助层（H）被布置，其用于在制造过程中的层（S）的均匀定向性的增长。 辅助层（H）优选地基本上无定形的硅，非晶硅或非晶氮化硅组成。

公开(公告)号：WO02095085A8

公开(公告)日：2002-12-19

申请号：PCT/EP0105889

申请日：2001-05-22

Applicant: INFINEON TECHNOLOGIES AG ,  AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

IPC: H01L41/22 ,  C23C14/58 ,  C23C16/56 ,  H01C17/24 ,  H01L41/09 ,  H01L41/187 ,  H03H3/04 ,  H01J37/305

CPC classification number: C23C14/5833 ,  C23C14/58 ,  C23C14/5873 ,  C23C16/56 ,  C23F4/00 ,  H01C17/2404 ,  H03H3/04 ,  H03H2003/0414

Abstract: The invention relates to a method for producing a layer with a locally adapted or predefined layer thickness profile. Said method comprises the following steps: a) at least one layer (7) is applied to a substrate, b) a removal profile is determined for the applied layer and c) at least one ion beam (9) is guided over the layer at least once, in such a way that the layer (7) is etched locally at the site of the ion beam, in accordance with the removal profile, thus creating a layer with a locally adapted or predefined layer thickness profile.

Abstract translation: 根据本发明，提供了一种方法，用于与局部适配或预定义的层厚度分布产生层，其包括以下步骤：a）至少一个层被施加到基底上，b）一种去除轮廓被确定为所施加的层（7），和 c）至少一个离子束（9）在层引导至少一次，使得在根据所述去除轮廓在所述离子束的位置的层（7）中，用一种适合局部或预定义的层厚度分布的层的局部蚀刻产生。

公开(公告)号：WO0209202A3

公开(公告)日：2002-05-30

申请号：PCT/EP0108248

申请日：2001-07-17

Applicant: INFINEON TECHNOLOGIES AG ,  AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L37/02 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H01L41/24

CPC classification number: H03H3/02 ,  H01L37/02 ,  H01L41/319 ,  H03H2003/025

Abstract: At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositing a conductive material and then chemically-mechanically polished in order to smooth out surface roughness. The thickness of the deposited conductive material is preferably reduced by 10 nm to 100 nm by the chemical-mechanical polishing process.

Abstract translation: 作为层序列的部分，至少一个下电极（U），在层（S），其是压电或热电，和它产生的上部电极（O）。 由导电材料形成的下部电极（U）被沉积，然后以平滑的表面粗糙度化学机械抛光。 优选地，所沉积的导电材料的厚度由10纳米通过化学机械抛光减小至100nm。

公开(公告)号：DE50111463D1

公开(公告)日：2006-12-28

申请号：DE50111463

申请日：2001-09-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  TIMME HANS-JOERG

IPC: H03H9/17

Abstract: The resonator comprises a first electrode (E1), a second electrode (E2) and a piezoelectric layer (P) arranged between the above. A first acoustic compression layer (V1) is arranged between the piezoelectric layer (E1) and the first electrode (E1) with a higher acoustic impedance than the first electrode (E1).

公开(公告)号：DE10162580A1

公开(公告)日：2003-07-17

申请号：DE10162580

申请日：2001-12-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  NESSLER WINFRIED ,  MARKSTEINER STEPHAN ,  HANDTMANN MARTIN ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

IPC: H03H3/04 ,  H03H9/17 ,  H03H3/02 ,  H03H9/54 ,  H01L41/22

Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

公开(公告)号：DE10035421A1

公开(公告)日：2002-02-07

申请号：DE10035421

申请日：2000-07-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  LUEDER ELBRECHT ,  HERZOG THOMAS RAINER ,  MARKSTEINERN STEPHAN ,  NESSLER WINFRIED

IPC: H01L37/02 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H01L21/283 ,  H01L21/20 ,  H01L21/36 ,  H01L37/00 ,  H01L41/047 ,  H03H9/46

Abstract: At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositing a conductive material and then chemically-mechanically polished in order to smooth out surface roughness. The thickness of the deposited conductive material is preferably reduced by 10 nm to 100 nm by the chemical-mechanical polishing process.

公开(公告)号：DE50202672D1

公开(公告)日：2005-05-04

申请号：DE50202672

申请日：2002-11-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HANDTMANN MARTIN ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  TIMME HANS-JOERG

IPC: H03H3/04 ,  H03H9/17

Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

公开(公告)号：DE10147075A1

公开(公告)日：2003-04-30

申请号：DE10147075

申请日：2001-09-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H03H3/02 ,  H03H3/04 ,  H03H9/00 ,  H03H9/58 ,  H03H9/60

Abstract: A piezoelectric component comprises at least two stacked crystal filters on a substrate. Each stacked crystal filter comprises a bottom electrode, a first piezoelectric layer arranged above the bottom electrode, a central electrode arranged above the first piezoelectric layer, a second piezoelectric layer arranged above the central electrode, and a top electrode arranged above the second piezoelectric layer. The bottom electrodes are directly connected to one another and the central electrodes are directly connected to one another.

公开(公告)号：ES2298254T3

公开(公告)日：2008-05-16

申请号：ES01967197

申请日：2001-07-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L37/02 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02

Abstract: Procedimiento para la producción de un componente de semiconductores con una secuencia de capas para la conversión de señales acústicas o térmicas y de modificaciones de la tensión eléctrica las unas en las otras, en el que como partes de la secuencia de capas se genera al menos un electrodo inferior (U), encima una capa (S) que es piezoeléctrica o piroeléctrica, y encima un electrodo superior (O), caracterizado porque el electrodo inferior (U) es generado depositando un material conductor y puliéndolo a continuación con medios químico - mecánicos para el alisamiento de rugosidades de la superficie.