公开(公告)号：US12107085B2

公开(公告)日：2024-10-01

申请号：US18219374

申请日：2023-07-07

Applicant: Intel Corporation

Inventor： Aaron D. Lilak ,  Gilbert Dewey ,  Cheng-Ying Huang ,  Christopher Jezewski ,  Ehren Mannebach ,  Rishabh Mehandru ,  Patrick Morrow ,  Anand S. Murthy ,  Anh Phan ,  Willy Rachmady

IPC: H01L27/088 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8258 ,  H01L21/84 ,  H01L23/00 ,  H01L23/48 ,  H01L23/522 ,  H01L23/538 ,  H01L27/06 ,  H01L27/092

CPC classification number: H01L27/0886 ,  H01L21/76898 ,  H01L21/8258 ,  H01L21/845 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/29 ,  H01L24/32 ,  H01L27/0924 ,  H01L24/94 ,  H01L2224/29188 ,  H01L2224/32145

Abstract: Stacked transistor structures having a conductive interconnect between source/drain regions of upper and lower transistors. In some embodiments, the interconnect is provided, at least in part, by highly doped epitaxial material deposited in the upper transistor's source/drain region. In such cases, the epitaxial material seeds off of an exposed portion of semiconductor material of or adjacent to the upper transistor's channel region and extends downward into a recess that exposes the lower transistor's source/drain contact structure. The epitaxial source/drain material directly contacts the lower transistor's source/drain contact structure, to provide the interconnect. In other embodiments, the epitaxial material still seeds off the exposed semiconductor material of or proximate to the channel region and extends downward into the recess, but need not contact the lower contact structure. Rather, a metal-containing contact structure passes through the epitaxial material of the upper source/drain region and contacts the lower transistor's source/drain contact structure.

公开(公告)号：US20240304543A1

公开(公告)日：2024-09-12

申请号：US18668038

申请日：2024-05-17

Applicant: Intel Corporation

Inventor： Kevin Lin ,  Noriyuki Sato ,  Tristan Tronic ,  Michael Christenson ,  Christopher Jezewski ,  Jiun-Ruey Chen ,  James M. Blackwell ,  Matthew Metz ,  Miriam Reshotko ,  Nafees Kabir ,  Jeffery Bielefeld ,  Manish Chandhok ,  Hui Jae Yoo ,  Elijah Karpov ,  Carl Naylor ,  Ramanan Chebiam

IPC: H01L23/522 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/32139 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76843 ,  H01L23/5283 ,  H01L23/53209

Abstract: IC interconnect structures including subtractively patterned features. Feature ends may be defined through multiple patterning of multiple cap materials for reduced misregistration. Subtractively patterned features may be lines integrated with damascene vias or with subtractively patterned vias, or may be vias integrated with damascene lines or with subtractively patterned lines. Subtractively patterned vias may be deposited as part of a planar metal layer and defined currently with interconnect lines. Subtractively patterned features may be integrated with air gap isolation structures. Subtractively patterned features may be include a barrier material on the bottom, top, or sidewall. A bottom barrier of a subtractively patterned features may be deposited with an area selective technique to be absent from an underlying interconnect feature. A barrier of a subtractively patterned feature may comprise graphene or a chalcogenide of a metal in the feature or in a seed layer.

公开(公告)号：US20240006533A1

公开(公告)日：2024-01-04

申请号：US17856982

申请日：2022-07-02

Applicant: Intel Corporation

Inventor： Gilbert Dewey ,  Siddharth Chouksey ,  Nazila Haratipour ,  Christopher Jezewski ,  Jitendra Kumar Jha ,  Ilya V. Karpov ,  Matthew V. Metz ,  Arnab Sen Gupta ,  I-Cheng Tung ,  Nancy Zelick ,  Chi-Hing Choi ,  Dan S. Lavric

IPC: H01L29/78 ,  H01L29/167

CPC classification number: H01L29/785 ,  H01L29/167

Abstract: Contacts to p-type source/drain regions comprise a boride, indium, or gallium metal compound layer. The boride, indium, or gallium metal compound layers can aid in forming thermally stable low resistance contacts. A boride, indium, or gallium metal compound layer is positioned between the source/drain region and the contact metal layer. A boride, indium, or gallium metal compound layer can be used in contacts contacting p-type source/drain regions comprising boron, indium, or gallium as the primary dopant, respectively. The boride, indium, or gallium metal compound layers prevent diffusion of boron, indium, or gallium from the source/drain region into the metal contact layer and dopant deactivation in the source/drain region due to annealing and other high-temperature processing steps that occur after contact formation. Boride, indium, or gallium metal contact layers can also reduce the amount of silicide that forms in source/drain regions during processing by limiting contact metal diffusion into source/drain regions.

公开(公告)号：US11830788B2

公开(公告)日：2023-11-28

申请号：US17303270

申请日：2021-05-25

Applicant: Intel Corporation

Inventor： Carl Naylor ,  Ashish Agrawal ,  Urusa Alaan ,  Christopher Jezewski ,  Mauro Kobrinsky ,  Kevin Lin ,  Abhishek Anil Sharma

IPC: H01L23/40 ,  H01L21/822 ,  H01L23/532 ,  H01L27/12 ,  H01L21/70

CPC classification number: H01L23/4012 ,  H01L21/707 ,  H01L21/8221 ,  H01L23/5329 ,  H01L27/1222

Abstract: An example relates to an integrated circuit including a semiconductor substrate, and a wiring layer stack located on the semiconductor substrate. The integrated circuit further includes a transistor embedded in the wiring layer stack. The transistor includes an embedded layer. The embedded layer has a thickness of less than 10 nm. The embedded layer includes at least one two-dimensional crystalline layer including more than 10% metal atoms. Further examples relate to methods for forming integrated circuits.

公开(公告)号：US11670588B2

公开(公告)日：2023-06-06

申请号：US16243790

申请日：2019-01-09

Applicant: Intel Corporation

Inventor： Christopher Jezewski ,  Ashish Agrawal ,  Kevin L. Lin ,  Abhishek Sharma ,  Carl Naylor ,  Urusa Alaan

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/12 ,  H01L29/417 ,  H01L29/24 ,  H01L29/423 ,  H01L29/786 ,  H01L23/535 ,  H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L21/4763

CPC classification number: H01L23/528 ,  H01L21/02568 ,  H01L21/47635 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/535 ,  H01L27/124 ,  H01L27/1222 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/78642 ,  G05B2219/1163

Abstract: Integrated circuits including selectable vias are disclosed. The techniques are particularly well-suited to back end of line (BEOL) processes. In accordance with some embodiments, a selectable via includes a vertically-oriented thin film transistor structure having a wrap around gate, which can be used to effectively select (or deselect) the selectable via ad hoc. When a selectable via is selected, a signal is allowed to pass through the selectable via. Conversely, when the selectable via is not selected, a signal is not allowed to pass through the selectable via. The selectable characteristic of the selectable via allows multiple vias to share a global interconnect. The global interconnect can be connected to any number of selectable vias, as well as standard vias.

公开(公告)号：US11664305B2

公开(公告)日：2023-05-30

申请号：US16455662

申请日：2019-06-27

Applicant: Intel Corporation

Inventor： Kevin Lai Lin ,  Manish Chandhok ,  Miriam Reshotko ,  Christopher Jezewski ,  Eungnak Han ,  Gurpreet Singh ,  Sarah Atanasov ,  Ian A. Young

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/5222 ,  H01L21/76802 ,  H01L23/528 ,  H01L23/5226

Abstract: An interconnect structure is disclosed. The interconnect structure includes a first line of interconnects and a second line of interconnects. The first line of interconnects and the second line of interconnects are staggered. The individual interconnects of the second line of interconnects are laterally offset from individual interconnects of the first line of interconnects. A dielectric material is adjacent to at least a portion of the individual interconnects of at least one of the first line of interconnects and the second line of interconnects.

公开(公告)号：US11637185B2

公开(公告)日：2023-04-25

申请号：US16141301

申请日：2018-09-25

Applicant: Intel Corporation

Inventor： Justin Weber ,  Harold Kennel ,  Abhishek Sharma ,  Christopher Jezewski ,  Matthew V. Metz ,  Tahir Ghani ,  Jack T. Kavalieros ,  Benjamin Chu-Kung ,  Van H. Le ,  Arnab Sen Gupta

IPC: H01L29/36 ,  H01L29/22 ,  H01L29/24 ,  H01L29/47 ,  H01L21/322 ,  H01L29/45 ,  H01L21/02 ,  H01L21/768 ,  H01L29/267

Abstract: Embodiments herein describe techniques for an integrated circuit that includes a substrate, a semiconductor device on the substrate, and a contact stack above the substrate and coupled to the semiconductor device. The contact stack includes a contact metal layer, and a semiconducting oxide layer adjacent to the contact metal layer. The semiconducting oxide layer includes a semiconducting oxide material, while the contact metal layer includes a metal with a sufficient Schottky-barrier height to induce an interfacial electric field between the semiconducting oxide layer and the contact metal layer to reject interstitial hydrogen from entering the semiconductor device through the contact stack. Other embodiments may be described and/or claimed.

公开(公告)号：US20200219804A1

公开(公告)日：2020-07-09

申请号：US16243790

申请日：2019-01-09

Applicant: Intel Corporation

Inventor： Christopher Jezewski ,  Ashish Agrawal ,  Kevin L. Lin ,  Abhishek Sharma ,  Carl Naylor ,  Urusa Alaan

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/12 ,  H01L29/417 ,  H01L29/24 ,  H01L29/423 ,  H01L23/535 ,  H01L29/786 ,  H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L21/4763

Abstract: Integrated circuits including selectable vias are disclosed. The techniques are particularly well-suited to back end of line (BEOL) processes. In accordance with some embodiments, a selectable via includes a vertically-oriented thin film transistor structure having a wrap around gate, which can be used to effectively select (or deselect) the selectable via ad hoc. When a selectable via is selected, a signal is allowed to pass through the selectable via. Conversely, when the selectable via is not selected, a signal is not allowed to pass through the selectable via. The selectable characteristic of the selectable via allows multiple vias to share a global interconnect. The global interconnect can be connected to any number of selectable vias, as well as standard vias.

公开(公告)号：US20170347448A1

公开(公告)日：2017-11-30

申请号：US15676519

申请日：2017-08-14

Applicant: Intel Corporation

Inventor： Christopher Jezewski ,  Ravi Pillarisetty ,  Brian Doyle

IPC: H05K1/03 ,  D03D11/02 ,  D03D15/00 ,  H05K3/00 ,  H05K3/10 ,  H05K3/32 ,  D03D1/00 ,  H05K3/28 ,  H05K1/02 ,  H05K1/18

CPC classification number: H05K1/038 ,  D03D1/0088 ,  D03D11/02 ,  D03D15/00 ,  H05K1/028 ,  H05K1/0393 ,  H05K1/189 ,  H05K3/0058 ,  H05K3/10 ,  H05K3/28 ,  H05K3/284 ,  H05K3/32 ,  H05K2201/0145 ,  H05K2201/015 ,  H05K2201/0154 ,  H05K2201/0158 ,  H05K2201/029

Abstract: A system comprises an article comprising one or more fabric layers, a. plurality of electronic devices, each being incorporated into or onto one of the one or more fabric layers, and one or more communication links between two or more of the plurality of electronic devices. Each of the plurality of electronic devices can comprise a flexible substrate coupled to the fabric layer, one or more metallization layers deposited on the flexible substrate, and one or more electronic components electrically coupled to the one or more metallization layers.